PHILIPS PMEM4020AND

PMEM4020AND
NPN transistor/Schottky rectifier module
Rev. 02 — 31 August 2009
Product data sheet
1. Product profile
1.1 General description
Combination of an NPN transistor with low VCEsat and high current capability and a planar
Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package. PNP complement: PMEM4020APD
1.2 Features
n
n
n
n
n
n
600 mW total power dissipation
High current capability up to 2 A
Reduces printed-circuit board area required
Reduces pick and place costs
Small plastic SMD package
Transistor
u Low collector-emitter saturation voltage
n Diode
u Ultra high-speed switching
u Very low forward voltage
u Guard ring protected
1.3 Applications
n
n
n
n
n
DC-to-DC converters
Inductive load drivers
General purpose load drivers
Reverse polarity protection circuits
MOSFET drivers
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
40
V
-
-
2
A
NPN transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
continuous;
Ts ≤ 55 °C
[1]
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
Table 1.
Symbol
Quick reference data …continued
Parameter
Conditions
Min
Typ
Max
Unit
Schottky barrier rectifier
VR
continuous reverse voltage
-
-
40
V
IF
continuous forward current
-
-
1
A
[1]
Soldering point of collector or cathode tab.
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1
emitter
2
not connected
3
cathode
4
anode
5
base
6
collector
Simplified outline
6
5
Symbol
4
4
3
6
5
1
2
1
3
sym041
3. Ordering information
Table 3.
Ordering information
Type number
PMEM4020AND
Package
Name
Description
Version
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking
Type number
Marking code
PMEM4020AND
D2
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
NPN transistor
VCBO
collector-base voltage
open emitter
-
40
V
VCEO
collector-emitter voltage
open base
-
40
V
VEBO
emitter-base voltage
open collector
-
5
V
PMEM4020AND_2
Product data sheet
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Rev. 02 — 31 August 2009
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PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
Table 5.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
IC
Parameter
collector current (DC)
ICM
peak collector current
IBM
peak base current
Ptot
total power dissipation
Conditions
Min
Max
Unit
continuous
[1]
-
0.95
A
continuous
[2]
-
1.30
A
continuous
[3]
-
1.65
A
continuous;
Ts ≤ 55 °C
[4]
-
2
A
-
3
A
-
1
A
Tamb ≤ 25 °C
[1]
-
295
mW
Tamb ≤ 25 °C
[2]
-
400
mW
Tamb ≤ 25 °C
[3]
-
500
mW
Ts ≤ 55 °C
[4]
-
1000
mW
-
150
°C
-
40
V
junction temperature
Tj
Schottky barrier rectifier
VR
continuous reverse voltage
IF
continuous forward voltage
-
1
A
IFRM
repetitive peak forward
current
tp ≤ 1ms; δ ≤ 0.5
-
3.5
A
IFSM
non-repetitive peak forward
current
t = 8 ms; square
wave
-
10
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
295
mW
Tamb ≤ 25 °C
[2]
-
400
mW
Tamb ≤ 25 °C
[3]
-
500
mW
Ts ≤ 55 °C
[4]
-
1000
mW
[2]
-
150
°C
[2]
-
600
mW
−65
+150
°C
−65
+150
°C
junction temperature
Tj
Combined device
Ptot
total power dissipation
Tstg
storage temperature
Tamb
ambient temperature
Tamb ≤ 25 °C
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
[2]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both
collector and cathode.
[3]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4]
Soldering point of collector or cathode tab.
PMEM4020AND_2
Product data sheet
[2]
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
3 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
6. Thermal characteristics
Table 6.
Thermal characteristics[1]
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Single device
Rth(j-s)
thermal resistance from
junction to soldering point
in free air
[2]
-
-
95
K/W
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[3]
-
-
250
K/W
[4]
-
-
315
K/W
[5]
-
-
425
K/W
[3]
-
-
208
K/W
Combined device
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2]
Soldering point of collector or cathode tab.
[3]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
[4]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1cm2 mounting pad for both
collector and cathode tab.
[5]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint.
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
4 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
NPN transistor
ICBO
collector-base cut-off
current
VCB = 40 V; IE = 0 A
-
-
100
nA
VCB = 40 V; IE = 0 A;
Tj = 150 °C
-
-
50
µA
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
-
-
VCE = 5 V; IC = 500 mA
300
-
900
VCE = 5 V; IC = 1 A
200
-
-
75
-
-
-
-
75
VCE = 5 V; IC = 2 A
VCEsat
collector-emitter
saturation voltage
[1]
IC = 100 mA; IB = 1 mA
mV
IC = 500 mA; IB = 50 mA
-
-
100
mV
IC = 1 A; IB = 100 mA
-
-
190
mV
IC = 2 A; IB = 200 mA
-
-
400
mV
-
150
190
mΩ
RCEsat
equivalent
on-resistance
IC = 1 A; IB = 100 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
[1]
-
-
1.2
V
VBEon
base-emitter turn-on
voltage
VCE = 5 V; IC = 1 A
[1]
-
-
1.1
V
fT
transition frequency
VCE = 10 V; IC = 50 mA;
f = 100 MHz
150
-
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
-
10
pF
Schottky barrier rectifier
continuous forward
voltage
VF
reverse current
IR
diode capacitance
Cd
[1]
see Figure 1
IF = 0.1 mA
[1]
-
95
130
mV
IF = 1 mA
[1]
-
155
210
mV
IF = 10 mA
[1]
-
220
270
mV
IF = 100 mA
[1]
-
295
350
mV
IF = 1000 mA
[1]
-
540
640
mV
VR = 10 V
[1]
-
7
20
µA
VR = 40 V
[1]
-
30
100
µA
-
43
48
pF
see Figure 2
VR = 1 V; f = 1 MHz;
see Figure 3
Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
5 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
mdb670
105
mdb669
103
IR
(µA)
IF
(mA)
(1)
104
102
103
(1)
10
(2)
(2)
(3)
102
1
10−1
10
(3)
1
0
0.2
0.4
VF (V)
0
0.6
Schottky barrier rectifier
10
30
VR (V)
40
Schottky barrier rectifier
(1) Tamb = 150 °C
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(3) Tamb = 25 °C
Fig 1.
20
Forward current as a function of forward
voltage; typical values
mdb671
100
Cd
(pF)
Fig 2.
Reverse current as a function of reverse
voltage; typical values
mhc077
1000
hFE
(1)
80
800
60
600
(2)
400
40
(3)
200
20
0
10−1
0
0
5
10
15
20
1
10
102
VR (V)
Schottky barrier rectifier;
103
104
IC (mA)
NPN transistor; VCE = 5 V
Tamb = 25 °C; f = 1 MHz
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
DC current gain as a function of collector
current; typical values
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
6 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
mhc078
10
mhc079
103
VCEsat
(mV)
VBE
(V)
102
1
(1)
(1)
(2)
(3)
(2)
10
(3)
10−1
10−1
1
10
102
1
104
103
IC (mA)
NPN transistor; VCE = 5 V
1
103
IC (mA)
104
NPN transistor; IC/IB = 10
(1) Tamb = −55 °C
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(3) Tamb = −55 °C
Fig 5.
102
10
Base-emitter voltage as a function of collector
current; typical values
mhc080
102
Fig 6.
Collector-emitter saturation voltage as a
function of collector current; typical values
mhc081
400
fT
(MHz)
RCEsat
(Ω)
300
10
200
1
100
(1)
(2)
(3)
10−1
10−1
1
10
102
0
104
103
IC (mA)
0
NPN transistor; IC/IB = 10
200
400
600
800
1000
I C (mA)
NPN transistor; VCE = 10 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 7.
Equivalent on-resistance as a function of
collector current; typical values
Fig 8.
Transition frequency as a function of collector
current
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
7 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
8. Application information
VCC
VIN
VOUT
CONTROLLER
IN
Rload
mle231
Fig 9.
DC-to-DC converter
mdb577
Fig 10. Inductive load driver (relays, motors and
buzzers) with free-wheeling diode
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
8 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
9. Package outline
Plastic surface-mounted package (TSOP6); 6 leads
D
SOT457
E
B
y
A
HE
6
X
v M A
4
5
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT457
JEITA
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
05-11-07
06-03-16
Fig 11. Package outline SOT457 (SC-74)
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
9 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
PMEM4020AND
[1]
SOT457
10000
4 mm pitch, 8 mm tape and reel; T1
-115
-135
4 mm pitch, 8 mm tape and reel; T2
-125
-165
For further information and the availability of packing methods, see Section 13.
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
10 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
11. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PMEM4020AND_2
20090831
Product data sheet
-
PMEM4020AND_1
Modifications:
PMEM4020AND_1
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
Table 2 “Discrete pinning”: amended
Figure 11 “Package outline SOT457 (SC-74)”: updated
20041004
Product data sheet
PMEM4020AND_2
Product data sheet
-
-
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
11 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PMEM4020AND_2
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 02 — 31 August 2009
12 of 13
PMEM4020AND
NXP Semiconductors
NPN transistor/Schottky rectifier module
14. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Application information. . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 31 August 2009
Document identifier: PMEM4020AND_2