PHILIPS PBSS4160V

PBSS4160V
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 03 — 11 December 2009
Product data sheet
1. Product profile
1.1 General description
Low VCEsat (BISS) NPN transistor in a SOT666 plastic package.
PNP complement: PBSS5160V.
1.2 Features
„
„
„
„
„
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High efficiency, reduces heat generation
Reduces printed-circuit board area required
Cost effective replacement for medium power transistor BCP55 and BCX55
1.3 Applications
„ Major application segments:
‹ Automotive
‹ Telecom infrastructure
‹ Industrial
„ Power management:
‹ DC-to-DC conversion
‹ Supply line switching
„ Peripheral driver:
‹ Driver in low supply voltage applications (e.g. lamps and LEDs)
‹ Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VCEO
collector-emitter voltage
open base
IC
collector current (DC)
ICM
peak collector current
RCEsat
equivalent on-resistance
[1]
t = 1 ms or limited by Tj(max)
IC = 1 A; IB = 100 mA
[2]
Min
Typ
Max Unit
-
-
60
V
-
-
1
A
-
-
2
A
-
200
250
mΩ
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, 1 cm2 collector
mounting pad.
[2]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Discrete pinning
Pin
Description
1, 2, 5, 6
collector
3
base
4
emitter
Simplified outline
6
5
Symbol
1, 2, 5, 6
4
3
4
1
2
3
sym014
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS4160V
-
plastic surface mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS4160V
41
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
2 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage open emitter
-
80
V
VCEO
collector-emitter
voltage
open base
-
60
V
VEBO
emitter-base voltage
open collector
-
5
V
-
0.9
A
[1]
collector current (DC)
IC
[2]
ICM
peak collector current
t = 1 ms or limited by
Tj(max)
IB
base current (DC)
IBM
peak base current
Ptot
total power dissipation Tamb ≤ 25 °C
1
-
2
A
-
300
mA
-
1
A
[1]
-
300
mW
[2]
-
500
mW
tp ≤ 300 μs; δ ≤ 0.02
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
001aaa714
0.6
Ptot
(W)
(1)
0.4
(2)
0.2
0
0
40
80
120
160
Tamb (°C)
(1) FR4 PCB; 1 cm2 collector mounting pad
(2) FR4 PCB; standard footprint
Fig 1.
Power derating curves
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
3 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance from junction
to ambient
Rth(j-a)
Min Typ Max Unit
in free air
[1]
-
-
415 K/W
[2]
-
-
250 K/W
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, 1 cm2 collector mounting pad.
001aaa715
103
Zth
(K/W)
(1)
(2)
(3)
(4)
(5)
102
(6)
(7)
(8)
(9)
10
(10)
1
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Mounted on FR4 PCB; standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2.
Transient thermal impedance as a function of pulse time; typical values
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
4 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Typ
Max
Unit
collector-base
cut-off current
VCB = 60 V; IE = 0 A
-
-
100
nA
VCB = 60 V; IE = 0 A;
Tj = 150 °C
-
-
50
μA
ICES
collector-emitter
cut-off current
VCE = 60 V; VBE = 0 V
-
-
100
nA
IEBO
emitter-base cut-off VEB = 5 V; IC = 0 A
current
-
-
100
nA
hFE
DC current gain
ICBO
VCEsat
collector-emitter
saturation voltage
VCE = 5 V; IC = 1 mA
250
400
-
VCE = 5 V; IC = 500 mA
[1]
200
350
-
VCE = 5 V; IC = 1 A
[1]
100
150
-
-
90
110
mV
-
110
140
mV
-
200
250
mV
-
0.95
1.1
V
-
200
250
mΩ
IC = 100 mA; IB = 1 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
[1]
VBEsat
base-emitter
saturation voltage
IC = 1 A; IB = 50 mA
RCEsat
equivalent
on-resistance
IC = 1 A; IB = 100 mA
VBEon
base-emitter
turn-on voltage
VCE = 5 V; IC = 1 A
-
0.82
0.9
V
td
delay time
-
11
-
ns
tr
rise time
VCC = 10 V; IC = 0.5 A;
IBon = 25 mA; IBoff = −25 mA
-
78
-
ns
ton
turn-on time
-
90
-
ns
ts
storage time
-
340
-
ns
tf
fall time
-
160
-
ns
toff
turn-off time
-
500
-
ns
fT
transition frequency IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
220
-
MHz
Cc
collector
capacitance
-
5.5
10
pF
[1]
VCB = 10 V; IE = Ie = 0 A;
f = 1 MHz
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PBSS4160V_3
Product data sheet
Min
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
5 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle130
800
hFE
mle133
1.2
VBE
(V)
600
(1)
(1)
0.8
(2)
(2)
(3)
400
0.4
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 5 V
VCE = 5 V
(1) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = 100 °C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
mle135
1
10
102
103
104
IC (mA)
Base-emitter voltage as a function of collector
current; typical values
mle104
1
VCEsat
(V)
VCEsat
(V)
10−1
10−1
(2) (1)
10−2
(3)
(1)
(3)
10−3
10−1
1
10
102
103
104
IC (mA)
10−2
10−1
1
IC/IB = 10
IC/IB = 20
(1) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(3) Tamb = −55 °C
Fig 5.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 6.
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS4160V_3
Product data sheet
10
(2)
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
6 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle129
1
mle134
1.2
VBEsat
(V)
VCEsat
(V)
(1)
(2)
0.8
(3)
(1)
10−1
(2)
10−2
10−1
1
10
102
0.4
0
10−1
103
104
IC (mA)
Tamb = 25 °C
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) IC/IB = 100
(1) Tamb = −55 °C
(2) IC/IB = 50
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8.
Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
7 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
mle131
2
(6)
(5)
(4)
(3)
(2)
IC
(A)
(1)
mle132
103
RCEsat
(Ω)
1.6
102
(7)
(8)
1.2
(9)
10
(10)
0.8
1
0.4
(1)
(2)
(3)
10−1
0
0
1
2
3
5
4
10−1
1
VCE (V)
Tamb = 25 °C
10
102
103
104
IC (mA)
IC/IB = 20
(1) IB = 60 mA
(1) Tamb = 100 °C
(2) IB = 54 mA
(2) Tamb = 25 °C
(3) IB = 48 mA
(3) Tamb = −55 °C
(4) IB = 42 mA
(5) IB = 36 mA
(6) IB = 30 mA
(7) IB = 24 mA
(8) IB = 18 mA
(9) IB = 12 mA
(10) IB = 6 mA
Fig 9.
Collector current as a function of
collector-emitter voltage; typical values
Fig 10. Equivalent on-resistance as a function of
collector current; typical values
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
8 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig 11. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
oscilloscope
R2
VI
DUT
R1
mlb826
VCC = 10 V; IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA
Fig 12. Test circuit for switching times
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
9 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
8. Package outline
Plastic surface-mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
SOT666
Fig 13. Package outline SOT666
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
10 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
9. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
PBSS4160V
SOT666
4 mm pitch, 8 mm tape and reel
-115
4000
[1]
For further information and the availability of packing methods, see Section 12.
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
11 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
10. Revision history
Table 9.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PBSS4160V_3
20091211
Product data sheet
-
PBSS4160V_2
Modifications:
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
•
•
Table 2 “Discrete pinning”: updated
Figure 13 “Package outline SOT666”: updated
PBSS4160V_2
20050131
Product data sheet
-
PBSS4160V_1
PBSS4160V_1
20040423
Objective data sheet
-
-
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
12 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
11. Legal information
11.1
Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
11.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PBSS4160V_3
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 03 — 11 December 2009
13 of 14
PBSS4160V
NXP Semiconductors
60 V, 1 A NPN low VCEsat (BISS) transistor
13. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
11.1
11.2
11.3
11.4
12
13
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 11 December 2009
Document identifier: PBSS4160V_3