DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JA101 PNP general purpose transistor Product specification Supersedes data of 1997 Mar 10 File under Discrete Semiconductors, SC10 1998 Aug 04 Philips Semiconductors Product specification PNP general purpose transistor JA101 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • General purpose switching and amplification. DESCRIPTION handbook, halfpage1 PNP transistor in a TO-92; SOT54 plastic package. NPN complement: JC501. 2 2 3 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V ICM peak collector current − −200 mA mW Ptot total power dissipation Tamb ≤ 25 °C − 500 hFE DC current gain IC = −1 mA; VCE = −5 V 135 600 fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 − 1998 Aug 04 2 MHz Philips Semiconductors Product specification PNP general purpose transistor JA101 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −50 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA − 500 mW Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1998 Aug 04 3 VALUE UNIT 250 K/W Philips Semiconductors Product specification PNP general purpose transistor JA101 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = −45 V − − −15 nA ICBO collector cut-off current IE = 0; VCB = −45 V; Tj = 125 °C − − −4 µA IEBO emitter cut-off current IC = 0; VEB = −5 V − − −100 nA hFE DC current gain IC = −1 mA; VCE = −5 V JA101 135 − 600 JA101P 135 − 270 JA101Q 200 − 400 300 − 600 collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −300 mV IC = −100 mA; IB = −5 mA − −500 − mV JA101R VCEsat VBEsat base-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −700 − mV IC = −100 mA; IB = −5 mA − −850 − mV VBE base-emitter voltage IC = −2 mA; VCE = −5 V −550 − −700 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − − 6 pF − Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz 12 − pF fT transition frequency IC = −10 mA; VCE = −5 V; f = 100 MHz 100 130 − MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 10 dB 1998 Aug 04 4 − Philips Semiconductors Product specification PNP general purpose transistor JA101 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1998 Aug 04 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistor JA101 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 04 6 Philips Semiconductors Product specification PNP general purpose transistor JA101 NOTES 1998 Aug 04 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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