DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4126 PNP general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 25 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 PINNING FEATURES • Low current (max. 200 mA) PIN • Low voltage (max. 25 V). APPLICATIONS DESCRIPTION 1 collector 2 base 3 emitter • General purpose switching and amplification, e.g. small-signal audio-frequency applications. handbook, halfpage1 DESCRIPTION 1 2 3 2 PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −25 V VCEO collector-emitter voltage open base − −25 V ICM peak collector current − −300 mA Ptot total power dissipation Tamb ≤ 25 °C − 500 mW hFE DC current gain IC = −2 mA; VCE = −1 V 120 360 fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − 1997 Mar 25 2 MHz Philips Semiconductors Product specification PNP general purpose transistor 2N4126 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −25 V VCEO collector-emitter voltage open base − −25 V VEBO emitter-base voltage open collector − −4 V IC collector current (DC) − −200 mA ICM peak collector current − −300 mA IBM peak base current − −100 mA − 500 mW Tamb ≤ 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 250 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = −20 V − −50 nA IEBO emitter cut-off current IC = 0; VEB = −3 V − −50 nA hFE DC current gain IC = −2 mA; VCE = −1 V; note 1 120 360 IC = −50 mA; VCE = −1 V; note 1 60 − VCEsat collector-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 − −400 mV VBEsat base-emitter saturation voltage IC = −50 mA; IB = −5 mA; note 1 − −950 mV Cc collector capacitance IE = ie = 0; VCB = −5 V; f = 1 MHz − 4.5 pF Ce emitter capacitance IC = ic = 0; VEB = −0.5 V; f = 1 MHz − 10 pF fT transition frequency IC = −10 mA; VCE = −20 V; f = 100 MHz 250 − MHz F noise figure IC = −100 µA; VCE = −5 V; RS = 1 kΩ; f = 10 Hz to 15.7 kHz − 4 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1997 Mar 25 3 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1997 Mar 25 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 4 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1997 Mar 25 5 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 NOTES 1997 Mar 25 6 Philips Semiconductors Product specification PNP general purpose transistor 2N4126 NOTES 1997 Mar 25 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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