PHILIPS PH5416

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
PH5416
PNP high-voltage transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 22
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
FEATURES
PINNING
• High current (max. 1 A)
PIN
• High voltage (max. 300 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector
• Telephony applications.
DESCRIPTION
handbook, halfpage1
PNP high-voltage transistor in a TO-92; SOT54 plastic
package.
3
2
3
2
1
MAM281
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−350
V
VCEO
collector-emitter voltage
open base
−
−300
V
ICM
peak collector current
−
−1
A
Ptot
total power dissipation
Tamb ≤ 25 °C
−
500
mW
hFE
DC current gain
IC = −50 mA; VCE = −10 V
30
120
fT
transition frequency
IC = −10 mA; VCE = −10 V; f = 100 MHz
15
−
1997 Apr 22
2
MHz
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−350
V
VCEO
collector-emitter voltage
open base
−
−300
V
VEBO
emitter-base voltage
open collector
−
−6
V
IC
collector current (DC)
−
−1
A
ICM
peak collector current
−
−1
A
IBM
peak base current
−
−500
mA
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient note 1
VALUE
UNIT
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IE = 0; VCB = −280 V
−
−100
nA
emitter cut-off current
IC = 0; VEB = −6 V
−
−100
nA
DC current gain
IC = −50 mA; VCE = −10 V
30
120
VCEsat
collector-emitter saturation voltage
IC = −50 mA; IB = −5 mA
−
−800
mV
VBEsat
base-emitter saturation voltage
IC = −50 mA; IB = −5 mA
−
−1
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V;
f = 1 MHz
−
15
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −5 V;
f = 1 MHz
−
75
pF
fT
transition frequency
IC = −10 mA; VCE = −10 V; 15
f = 100 MHz
−
MHz
ICBO
collector cut-off current
IEBO
hFE
1997 Apr 22
3
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
e1
2
D
e
3
b1
L1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b1
c
D
d
E
e
e1
L
L1(1)
mm
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
1997 Apr 22
REFERENCES
IEC
JEDEC
EIAJ
TO-92
SC-43
4
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 22
5
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
NOTES
1997 Apr 22
6
Philips Semiconductors
Product specification
PNP high-voltage transistor
PH5416
NOTES
1997 Apr 22
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Apr 22
Document order number:
9397 750 01947