DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current (max. 300 mA) PIN • High voltage (max. 150 V). 1 collector 2 base 3 emitter APPLICATIONS DESCRIPTION • General purpose switching and amplification • Telephony applications. handbook, halfpage1 DESCRIPTION 1 2 3 2 PNP high-voltage transistor in a TO-92; SOT54 plastic package. NPN complement: 2N5551. 3 MAM280 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −160 VCEO collector-emitter voltage open base − −150 V VEBO emitter-base voltage open collector − −5 V IC collector current (DC) − −300 mA ICM peak collector current − −600 mA IBM peak base current Ptot total power dissipation Tstg V − −100 mA − 630 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 1999 Apr 08 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 200 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER MIN. MAX. UNIT IE = 0; VCB = −120 V − −50 nA IE = 0; VCB = −120 V; Tamb = 100 °C − −50 µA IC = 0; VEB = −4 V − −50 nA IC = −1 mA; VCE = −5 V; see Fig.2 50 − IC = −10 mA; VCE = −5 V; see Fig.2 60 240 IC = −50 mA; VCE = −5 V; see Fig.2 50 − collector-emitter saturation voltage IC = −10 mA; IB = −1 mA − −200 mV IC = −50 mA; IB = −5 mA − −500 mV − ICBO collector cut-off current IEBO emitter cut-off current hFE DC current gain VCEsat CONDITIONS Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz 6 pF fT transition frequency IC = −10 mA; VCE = −10 V; f = 100 MHz 100 300 MHz F noise figure IC = −200 µA; VCE = −5 V; RS = 2 kΩ; f = 10 Hz to 15.7 kHz 8 pF 1999 Apr 08 3 − Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 MGD813 200 handbook, full pagewidth hFE 150 VCE = −5 V 100 50 0 −10−1 −1 −10 −102 −103 IC mA Fig.2 DC current gain; typical values. 1999 Apr 08 4 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 1999 Apr 08 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 5 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 08 6 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 NOTES 1999 Apr 08 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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