PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement: PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation 1.3 Applications Major application segments: Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC conversion 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −100 V IC collector current (DC) - - −1 A ICM peak collector current single pulse; tp ≤ 1 ms - - −3 A RCEsat collector-emitter saturation resistance IC = −1 A; IB = −100 mA - 170 320 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 006aaa231 3. Ordering information Table 3. Ordering information Type number PBSS9110X Package Name Description Version SC-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS9110X *4C [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 2 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO VCEO collector-base voltage open emitter - −120 V collector-emitter voltage open base - −100 V VEBO emitter-base voltage open collector - −5 V IC collector current (DC) - −1 A ICM peak collector current - −3 A IB base current (DC) single pulse; tp ≤ 1 ms Tamb ≤ 25 °C total power dissipation Ptot - −0.3 A [1] - 0.55 W [2] - 1.4 W [3] - 2.0 W Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, 6cm2 collector mounting pad. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aaa408 2.0 (1) Ptot (W) 1.6 (2) 1.2 0.8 (3) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 3 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 227 K/W [2] - - 89 K/W [3] - - 63 K/W - - 16 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2. [3] Device mounted on a ceramic PCB, AL2O3, standard footprint. 006aaa409 103 duty cycle = 1 0.75 2 10 0.5 0.33 0.2 Zth(j-a) (K/W) 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 4 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 006aaa411 103 Zth(j-a) (K/W) 102 10 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) FR4 PCB, mounting pad for collector 6cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 102 Zth(j-a) (K/W) 006aaa410 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 t p (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 5 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO collector-base cut-off current Conditions Min Typ VCB = −80 V; IE = 0 A - VCB = −80 V; IE = 0 A; Tj = 150 °C - Unit - −100 nA - −50 μA - - −100 nA nA ICES collector-emitter cut-off VCE = −80 V; VBE = 0 V current IEBO emitter-base cut-off current VEB = −4 V; IC = 0 A - - −100 hFE DC current gain VCE = −5 V; IC = −1 mA 150 - - VCE = −5 V; IC = −250 mA VCEsat collector-emitter saturation voltage 150 - - VCE = −5 V; IC = −0.5 A [1] 150 - 450 VCE = −5 V; IC = −1 A [1] 125 - - IC = −250 mA; IB = −25 mA - - −120 mV IC = −500 mA; IB = −50 mA - - −180 mV IC = −1 A; IB = −100 mA [1] - - −320 mV IC = −1 A; IB = −100 mA [1] - 170 320 mΩ - - −1.1 V RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = −1 A; IB = −100 mA voltage VBEon base-emitter turn-on voltage IC = −1 A; VCE = −5 V - - −1.0 V td delay time - 20 - ns tr rise time - 60 - ns ton turn-on time VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A - 80 - ns ts storage time - 290 - ns tf fall time - 120 - ns toff turn-off time - 410 - ns fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 100 - - MHz Cc collector capacitance IE = ie = 0 A; VCB = −10 V; f = 1 MHz - - 17 pF [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PBSS9110X_2 Product data sheet Max © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 6 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa376 600 (1) hFE 001aaa377 −1.2 VBE (V) (1) −0.8 400 (2) (2) (3) −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) VCE = −10 V −1 −102 −103 −104 IC (mA) VCE = −10 V (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 100 °C Fig 5. −10 DC current gain as a function of collector current; typical values Fig 6. 001aaa378 −1 Base-emitter voltage as a function of collector current; typical values 001aaa380 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (2) (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = 100 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = −55 °C Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 7 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa381 −10 VBEsat (V) 001aaa379 −10 VBEsat (V) −1 −1 (1) (2) (3) −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−1 −10−1 IC/IB = 10 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = −55 °C Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 9. Base-emitter saturation voltage as a function of collector current; typical values 001aaa382 103 Fig 10. Base-emitter saturation voltage as a function of collector current; typical values 001aaa383 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) (1) (2) (3) 1 1 (2) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 10 (1) Tamb = −55 °C (1) IC/IB = 50 (2) Tamb = 25 °C (2) IC/IB = 20 (3) Tamb = 100 °C Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 8 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 001aaa384 −2 IB (mA) = −45 IC −40.5 (A) −36 −1.6 −31.5 −27 −1.2 −22.5 −18 −13.5 −9 −4.5 −0.8 −0.4 0 0 −1 −2 −3 −4 VCE (V) −5 Fig 13. Collector current as a function of collector-emitter voltage; typical values PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 9 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 14. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −10 V; IC = −0.5 A; IBon = −0.025 A; IBoff = 0.025 A Fig 15. Test circuit for switching times PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 10 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 16. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS9110X [1] Package SOT89 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 15. PBSS9110X_2 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 11 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 Dimensions in mm 0.50 1.20 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 SOT89 standard mounting conditions for reflow soldering Dimensions in mm Fig 17. Reflow soldering footprint SOT89 (SC-62/TO-243) 12. Mounting 32 mm 30 mm 32 mm 40 mm 2.5 mm 20 mm 40 mm 1 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 001aaa234 Fig 18. FR4 PCB, standard footprint PBSS9110X_2 Product data sheet 5 mm 1.6 mm 001aaa235 Fig 19. FR4 PCB, mounting pad for collector 6cm2 © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 12 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS9110X_2 20091122 Product data sheet - PBSS9110X_1 Modifications: PBSS9110X_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 12 “Collector-emitter saturation resistance as a function of collector current; typical values”: updated • Figure 13 “Collector current as a function of collector-emitter voltage; typical values”: updated 20050502 Product data sheet - PBSS9110X_2 Product data sheet - © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 13 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS9110X_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 22 November 2009 14 of 15 PBSS9110X NXP Semiconductors 100 V, 1 A PNP low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 November 2009 Document identifier: PBSS9110X_2