BUK9Y30-75B N-channel TrenchMOS™ logic level FET Rev. 01 — 14 July 2004 M3D748 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features ■ Very low on-state resistance ■ 175 °C rated ■ Q101 compliant ■ Logic level compatible. 1.3 Applications ■ Automotive systems ■ Motors, lamps and solenoids ■ 12 V, 24 V, and 42 V loads ■ General purpose power switching. 1.4 Quick reference data ■ EDS(AL)S ≤ 89 mJ ■ ID ≤ 30 A ■ RDSon = 25 mΩ (typ) ■ Ptot ≤ 75 W. 2. Pinning information Table 1: Pinning - SOT669 (LFPAK) simplified outline and symbol Pin Description 1,2,3 source (s) 4 gate (g) mb mounting base, connected to drain (d) Simplified outline Symbol mb d g 1 2 Top view 3 4 MBL286 SOT669 (LFPAK) MBL798 s1 s2 s3 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 3. Ordering information Table 2: Ordering information Type number BUK9Y30-75B Package Name Description Version LFPAK Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads SOT669 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS drain-source voltage (DC) VDGR drain-gate voltage (DC) VGS gate-source voltage (DC) ID drain current (DC) Conditions Min Max Unit - 75 V - 75 V - ±15 V Tmb = 25 °C; VGS = 5 V; Figure 2 and 3 - 30 A Tmb = 100 °C; VGS = 5 V; Figure 2 - 21 A RGS = 20 kΩ IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 120 A Tmb = 25 °C; Figure 1 Ptot total power dissipation - 75 W Tstg storage temperature −55 +175 °C Tj junction temperature −55 +175 °C Source-drain diode IDR reverse drain current (DC) Tmb = 25 °C - 30 A IDRM peak reverse drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs - 120 A unclamped inductive load; ID = 30 A; VDS ≤ 75 V; VGS = 5 V; RGS = 50 Ω; starting Tmb = 25 °C - 89 mJ - [1] - Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy EDS(AL)R repetitive drain-source avalanche energy [1] Max value not quoted. Repetitive rating defined in Figure 16. Single-shot avalanche rating limited by Tj(max) of 175 °C. Repetitive avalanche rating limited by Tj(avg) of 170 °C. Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 2 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 03na19 120 03no16 40 ID (A) Pder (%) 30 80 20 40 10 0 0 0 50 100 150 200 Tmb (°C) 0 50 100 150 200 Tmb (°C) VGS ≥ 5 V P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 1. Normalized total power dissipation as a function of mounting base temperature. Fig 2. Continuous drain current as a function of mounting base temperature. 03no14 103 ID (A) tp = 10 µ s Limit RDSon = VDS / ID 102 100 µ s 10 DC 1 ms 10 ms 100 ms 1 1 102 10 VDS (V) 103 Tmb = 25 °C; IDM single pulse. Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 3 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter thermal resistance from junction to mounting base Rth(j-mb) Conditions Min Typ Max Unit Figure 4 - - 2 K/W 5.1 Transient thermal impedance 03no15 10 Zth(j-mb) (K/W) δ = 0.5 1 0.2 0.1 0.05 10-1 0.02 δ= P tp T t tp 10-2 10-6 T single shot 10-5 10-4 10-3 10-2 10-1 tp (s) 1 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 4 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 6. Characteristics Table 5: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS VGS(th) IDSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V Tj = 25 °C 75 - - V Tj = −55 °C 70 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 drain-source leakage current Tj = 25 °C 1.1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V Tj = 25 °C - 0.02 1 µA Tj = 175 °C - - 500 µA - 2 100 nA Tj = 25 °C - 25 30 mΩ Tj = 175 °C - - 72 mΩ VGS = 4.5 V; ID = 15 A - - 34 mΩ VGS = 10 V; ID = 15 A - 23 28 mΩ VGS = 5 V; VDD = 60 V; ID = 25 A; Figure 14 - 19 - nC - 5 - nC - 9 - nC - 1550 2070 pF - 150 179 pF - 60 80 pF - 16 - ns VDS = 75 V; VGS = 0 V IGSS gate-source leakage current VGS = ±15 V; VDS = 0 V RDSon drain-source on-state resistance VGS = 5 V; ID = 15 A; Figure 7 and 8 Dynamic characteristics Qg(tot) total gate charge Qgs gate-to-source charge Qgd gate-to-drain (Miller) charge Ciss input capacitance Coss output capacitance Crss reverse transfer capacitance td(on) turn-on delay time tr rise time - 106 - ns td(off) turn-off delay time - 51 - ns tf fall time - 83 - ns VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VDD = 30 V; RL = 1.2 Ω; VGS = 5 V; RG = 10 Ω Source-drain diode VSD source-drain (diode forward) voltage IS = 15 A; VGS = 0 V; Figure 15 - 0.85 1.2 V trr reverse recovery time - 101 - ns Qr recovered charge IS = 20 A; dIS/dt = −100 A/µs VGS = −10 V; VDS = 30 V - 115 - nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 5 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 03no11 100 Label is VGS (V) ID (A) 03no10 30 RDSon (mΩ) 28 10 7 5 75 4.2 4 26 3.8 50 3.6 24 3.4 25 3.2 22 3 2.8 2.6 0 0 2 4 6 8 20 10 VDS (V) Tj = 25 °C; tp = 300 µs 3 15 VGS (V) Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. 03no12 60 3.4 11 Tj = 25 °C; ID = 15 A Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. RDSon (mΩ) 7 03nq03 3 3.6 3.8 4 5 50 a 10 2 40 30 1 20 Label is VGS (V) 10 0 0 20 40 60 ID (A) 80 Tj = 25 °C -60 60 120 Tj (°C) 180 R DSon a = ---------------------------R DSon ( 25 °C ) Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data 0 Rev. 01 — 14 July 2004 6 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 10-1 03ng52 2.5 VGS(th) 03ng53 ID (A) (V) max 10-2 2.0 min 1.0 min -3 10 typ 1.5 typ max 10-4 10-5 0.5 10-6 0.0 -60 0 60 120 Tj (°C) 180 0 0.5 1 1.5 2 2.5 3 VGS (V) Tj = 25 °C; VDS = VGS ID = 1 mA; VDS = VGS Fig 9. Gate-source threshold voltage as a function of junction temperature. 03no08 50 Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03no13 2500 C (pF) gfs (S) Ciss 1875 40 1250 Coss 625 Crss 30 20 0 10 20 30 ID (A) 40 Tj = 25 °C; VDS = 25 V 0 10-1 10 VDS (V) 102 VGS = 0 V; f = 1 MHz Fig 11. Forward transconductance as a function of drain current; typical values. Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data 1 Rev. 01 — 14 July 2004 7 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 03no09 60 03no07 5 VDD = 14 V VGS (V) ID (A) VDD = 60 V 4 40 3 2 20 1 Tj = 175 °C Tj = 25 °C 0 0 0 1 2 3 4 5 0 5 10 15 VGS (V) QG (nC) 20 Tj = 25 °C; ID = 25 A VDS = 25 V Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03no06 100 Fig 14. Gate-source voltage as a function of gate charge; typical values. 03np81 102 IS (A) IAV (A) Single-shot 75 Tj = 25 °C 50 10 Single-shot Tj = 150 °C 25 Repetitive Tj = 175 °C Tj = 25 °C 0 0.0 0.3 0.6 0.9 1.2 1 10-3 10-1 1 10 See limiting value note [1] in Section 4 Limiting values. VGS = 0 V Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 16. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data 10-2 tAV (ms) VSD (V) Rev. 01 — 14 July 2004 8 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 7. Package outline Plastic single-ended surface mounted package (Philips version LFPAK); 4 leads A2 A E SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 4 X e w M A b 1/2 c e A (A 3) A1 C θ L detail X y C 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 A2 A3 b b2 1.20 0.15 1.10 0.50 4.41 0.25 1.01 0.00 0.95 0.35 3.62 mm b3 b4 2.2 2.0 0.9 0.7 c D (1) c2 D1(1) E(1) E1(1) max 0.25 0.30 4.10 4.20 0.19 0.24 3.80 5.0 4.8 3.3 3.1 e H L L1 L2 w y θ 1.27 6.2 5.8 0.85 0.40 1.3 0.8 1.3 0.8 0.25 0.1 8° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT669 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-09-15 MO-235 Fig 17. SOT669 (LFPAK). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 9 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 8. Revision history Table 6: Revision history Rev Date 01 20040714 CPCN Description - Product data (9397 750 13724) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Product data Rev. 01 — 14 July 2004 10 of 12 BUK9Y30-75B Philips Semiconductors N-channel TrenchMOS™ logic level FET 9. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 10. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Trademarks TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. 11. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 13724 Rev. 01 — 14 July 2004 11 of 12 Philips Semiconductors BUK9Y30-75B N-channel TrenchMOS™ logic level FET Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 5.1 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 July 2004 Document order number: 9397 750 13724