INFINEON SBH92344N-FSAN

Fiber Optics
High Power
BIDI® Optical Standard Module
1550 nm Emitting, 1310 nm Receiving
SBH92344x-FSAN
Features
• Designed for application in passive-optical
networks according to FSAN, ITU-T G.983
• Suitable for OLT applications, 155 Mbit/s
downstream bitrate
• Integrated Wavelength Division
Multiplexer (WDM)
• Bi-Directional Transmission in 2nd and 3rd
optical window
• Single fiber solution
• DFB-Laser Diode with Multi-Quantum
Well structure
• Class 3B Laser Product
• Suitable for bit rates up to 1.25 Gbit/s
• Ternary Photodiode at rear mirror for monitoring and control of radiant power
• Low noise / high bandwidth PIN diode
• Hermetically sealed subcomponents, similar to TO 46
• With singlemode fiber pigtail
BIDI® is a registered trademark of Infineon Technologies
Data Sheet
1
2002-05-28
SBH92344x-FSAN
Pin Configuration
Pin Configuration
Transmitter (bottom view)
2.54 mm
Pinning 2
(Standard)
2
2
LD
1
1
3
3
4
Figure 1
MD
4
Transmitter
Receiver with Preamp (bottom view)
2.54 mm
Pinning
(Standard)
2
3
1
Out−
3
4
Figure 2
4 VCC
Pin
Preamp
1
Out+
2
Receiver with Preamp
Other Pinnings on request / different drawing set required for non standard pinning
Data Sheet
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2002-05-28
SBH92344x-FSAN
Description
Description
The Infineon module for bidirectional optical transmission has been designed for
different optical networks structures.
In the last few years the structure has changed from point to point planned for Broad
band ISDN to a point to multipoint passive optical network (PON) architecture for the
optical network in the subscriber loop.
A transceiver can be realized with discrete elements (Figure 3). Transmitter and
receiver with pigtails are connected with a fiber-coupler (2:1 or 2:2, wavelength
independent or WDM).
Transmitter
Coupler
Receiver
Figure 3
2:1 or 2:2
3 dB wavelength independent
or wavelength division multiplexing
Realization with Discrete Elements
Infineon has realized this transceiver configuration in a compact module called a BIDI®
(Figure 4).
This module is especially suitable for separating the opposing signals at the ends of a
link. It replaces a discrete solution with a transmitter, receiver and coupler.
The basic devices are a laser diode and a photodiode, each in a TO package, plus the
filter in the beam path. A lens in the TO laser concentrates the light and enables it to be
launched into the single-mode fiber of the module. In the same way the light from the
fiber is focused onto the small, light-sensitive area of the photodiode to produce a high
photo current. The mirror for coupling out the received signal is arranged in the beam so
that the transmitter and receiver are at right angles to each other. This means the
greatest possible degree of freedom in the layout of the electric circuit.
Data Sheet
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2002-05-28
SBH92344x-FSAN
Description
Glass Lens
Beam Splitter
Fiber
TOLaser
TO-Detector
Figure 4
Compact Realization of the Transceiver in One Module
A decisive advantage of the module is its use of standard TO components. These
devices, produced in large quantities, are hermetically sealed and tested before they are
built in. This makes a very substantial contribution to the excellent reliability of the
module. The solid metal package of the module serves the same purpose. It allows the
use of modern laser welding techniques for reliable fixing of the different elements and
the fiber holder.
Data Sheet
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SBH92344x-FSAN
FSAN Applications
FSAN Applications
The generation of a service-independent platform providing a high transport capacity
based on the existing infrastructure is the most important goal with respect to the
standardization of new systems for the access network. For FSAN (Full Service Access
Network) there have been several Working Groups working on a special system
configuration. The target of FSAN was to make a specification for:
•
•
•
•
Fiber To The Cabinet (FTTCab)
Fiber To The Curb (FTTC)
Fiber To The Building (FTTB)
Fiber To The Home (FTTH).
The FSAN Basic Network Structure is shown below.
The Common Access System
Switch
Node
ATM
OLT
OLT
ATM
OLT
ATM
OLT
Figure 5
Data Sheet
Cabinet
Home
Curb
PON
SDH
ATM
Local
Exchange
PON Head
End Node
OLT: Optical Line Termination
ONU: Optical Network Unit
ONT: Optical Network Termination
ATM: Asynchron Transfer Mode
SDH: Synchronous Digital
Hierarchy
NTE: Network Termination
UNI: User Network Interface
ADSL: Asymmetric Digital
Subscriber Line
VDSL: Very High Speed Digital
Subscriber Line
UNI
ADSL
ONU
VDSL
ONU
ONU
Passive Optical Network
VDSL
NTE
FTTEx
NTE
FTTCab
NTE
FTTC/FTTB
ONU
ONT
FTTB/FTTH
FSAN Basic Network Structure
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SBH92344x-FSAN
Technical Data
Technical Data
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
0
70
–40
85
Unit
Module
TC
Tstg
TS
Operating temperature range at case
Storage temperature range
Soldering temperature (tmax = 10 s,
2 mm distance from bottom edge of case)
°C
260
Laser Diode
Direct forward current
Radiant power CW
Reverse Voltage
IF max
PF, rad
VR
120
mA
4
mW
2
V
VR
IF
10
V
2
mA
VR
IF
Pport
10
V
2
mA
3
mW
Monitor Diode
Reverse Voltage
Forward Current
Receiver Diode
Reverse Voltage
Forward Current
Optical power into the optical port
Data Sheet
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SBH92344x-FSAN
Technical Data
The electro-optical characteristics described in the following tables are only valid for use
within the specified maximum ratings or under the recommended operating conditions.
Transmitter Electro-Optical Characteristics
Parameter
Symbol
Limit Values
min.
typ.
Unit
max.
Optical output power
(maximum)
PF, max
2
Emission wavelength center of
range, PF = 0.5 PF, max.
ltrans
1480
Spectral width (RMS)
sl
0.1
Temperature coefficient of
wavelength
TC
0.15
nm/K
Threshold current
(whole temperature range)
Ith
55
mA
Forward voltage, PF = 0.5 PF, max. VF
1.5
V
Radiant power at Ith
Pth
50
µW
Slope efficiency (0...70°C)
h
35
150
mW/A
–30
30
%
8
W
100
200
ps
270
500
Rise time (10%–90%)
Fall time (10%–90%)
1580
2
Variation of 1st derivative of P/I Svar
(0.1 to 2.0 mW)
Differential series resistance
mW
RS
tr
tf
nm
Monitor Diode Electro-Optical Characteristics
Parameter
Symbol
Limit Values
min.
Dark current, VR = 5 V, PF = 0, T = Tmax
100
Capacitance, VR = 5 V, f = 1 MHz
IR
IP
C5
Tracking error 1), VR = 5 V
TE
–1
Photocurrent, VR = 5 V, PF = 0.5 PF, max
1)
Unit
max.
500
nA
1000
µA
10
pF
1
dB
The tracking error TE is the maximum deviation of PF at constant current Imon over a specified temperature
range and relative to the reference point: Imon, ref = Imon (T = 25°C, PF = 0.5 PF, max.). Thus, TE is given by:
PF [ TC ]
TE [ dB ] = 10 ™ log ------------------------P F [ 25°C ]
Data Sheet
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SBH92344x-FSAN
Technical Data
Receiver Diode Electro-Optical Characteristics
Parameter
Symbol
Spectral sensitivity, VR = 5 V, l = 1310 nm
Srec
tr ; tf
Rise and fall time (10%–90%)
RL = 50 W, VR = 5 V
Limit Values
Unit
min.
max.
0.65
1
A/W
0.5
ns
Total capacitance
VR = 5 V, Popt = 0, f = 1 MHz
C
1.5
pF
Dark current, VR = 5 V, Popt = 0
ID
50
nA
Characteristics for Pin-Preamp-Receivers at TA = 25°C, unless otherwise specified.
Preamp Characteristics
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
VCC
ICC
4.5
5
6
V
25
26
mA
Optical Sensitivity
(BER ˆ 10–10, PN7)
S
–33
–36
dBm
Linear Bandwidth (–3 dB)
BW
180
240
MHz
–7
–5
dBm
8
10
12
kW
40
50
60
W
DC-Characteristics
Supply Voltage
Supply Current
AC-Characteristics
Pmax
Transimpedance (single ended) RT
Output resistance
Rout
Optical overload (average)
(single ended)
Noise current density
Gain (differential)
Data Sheet
pa/»Hz
3
G
10
8
16
24
mV/µW
2002-05-28
SBH92344x-FSAN
Technical Data
Module Electro-Optical Characteristics
Parameter
Symbol
Limit Values
min.
Unit
max.
Optical Crosstalk1)
CRT
–47
Backreflection (Return Loss) 1310 nm
RL
–20
dB
Backreflection (Return Loss) 1550 nm
1)
Optical Crosstalk is defined as
I Det.0
CRT [ dB ] = 10 ™ log -----------I Det.1
with: IDet,0: the photocurrent with PF = 0.5 PF, max., without optical input, CW laser operation, VR = 2 V and
IDet,1: the photocurrent without PF, but 0.5 PF, max. optical input power, l = 1310 nm.
End of Life Time Characteristics
Parameter
Symbol
Limit Values
min.
Threshold current at T = Tmax
Unit
max.
Ith
DI F
7
70
Tracking Error
TE
–1.5
1.5
dB
Detector Dark Current, VR = 2 V, T = Tmax
IR
IR
400
nA
1
µA
Current above threshold, over full
temperature range, at Imon, ref = Imon
(T = 25°C, PF = 0.5 PF, max., BOL)
Monitor Dark Current, VR = 2 V, T = Tmax
Data Sheet
9
60
mA
2002-05-28
SBH92344x-FSAN
Fiber Data
Fiber Data
The mechanical fiber characteristics are described in the following table.
Fiber Characteristics
Parameter
Limit Values
min.
typ.
max.
Mode Field Diameter
8
9
10
Cladding Diameter
123
125
127
Mode Field/Cladding Concentricity Error
1
Cladding Non-circularity
2
Mode Field Non-circularity
6
Cut off Wavelength
1270
Jacket Diameter
0.8
Bending Radius
30
Tensile Strength Fiber Case
5
Length
0.8
Data Sheet
10
Unit
µm
%
nm
1
mm
N
1.2
m
2002-05-28
SBH92344x-FSAN
Eye Safety
Eye Safety
Ensure to avoid exposure of human eyes to high power laser diode emitted laser beams.
Especially do not look directly into the laser diode or the collimated laser beam when the
diode is activated.
Class 3B Laser Product According to IEC 60825-1
INVISIBLE LASER RADIATION
AVOID EXPOSURE TO BEAM
Class 3B Laser Product
Figure 6
Required Labels
Class IIIb Laser Product According to FDA Regulations Complies with
21 CFR 1040.10 and 1040.11
LASER RADIATION - AVOID
DIRECT EXPOSURE TO BEAM
SEMICONDUCTOR LASER
INVISIBLE RADIATION
CLASS IIIb LASER PRODUCT
Figure 7
Required Label
Laser Data
Wavelength
1550 nm
Maximum total output power
less than 50 mW
Beam divergence (1/e2)
10°
Data Sheet
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SBH92344x-FSAN
Package Outlines
Package Outlines
Dimensions in mm
Figure 8
Connector Options
Model
Type
SBH92344G-FSAN
SM FC/PC
SBH92344N-FSAN
SM SC/PC 0°
SBH92344P-FSAN
SM SC/APC 8°
SBH92344Z-FSAN
SM without connector
Other connectors on request
Data Sheet
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2002-05-28
SBH92344x-FSAN
Revision History:
2002-05-28
DS0
Previous Version:
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Subjects (major changes since last revision)
Document’s layout has been changed: 2002-Aug.
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com.
Edition 2002-05-28
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2002.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.