PHILIPS BLF573S

BLF573S
HF / VHF power LDMOS transistor
Rev. 01 — 8 December 2008
Preliminary data sheet
1. Product profile
1.1 General description
A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific
and medical applications in the HF to 500 MHz band.
Table 1.
Production test information
Mode of operation
CW
f
VDS
PL
Gp
ηD
(MHz)
(V)
(W)
(dB)
(%)
225
50
300
26.5
70
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
n Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an
IDq of 900 mA:
u Average output power = 300 W
u Power gain = 26.5 dB
u Efficiency = 70 %
n Easy power control
n Integrated ESD protection
n Excellent ruggedness
n High efficiency
n Excellent thermal stability
n Designed for broadband operation (HF and VHF band)
n Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
n Industrial, scientific and medical applications
n Broadcast transmitter applications
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain
2
gate
3
source
Simplified outline
Graphic symbol
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF573S
Package
Name
Description
Version
-
earless flanged LDMOST ceramic package, 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
110
V
VGS
gate-source voltage
−0.5
+11
V
ID
drain current
-
42
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
-
225
°C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-c)
thermal resistance from
junction to case
Tcase = 80 °C; PL = 300 W
[1]
Typ
Unit
0.21
K/W
Rth(j-c) is measured under RF conditions.
BLF573S_1
Preliminary data sheet
[1]
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
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BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.75 mA
Min
Typ
Max
Unit
110
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 375 mA
1.25
1.7
2.25
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 900 mA
1.45
1.95
2.45
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
4.2
µA
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
44
56
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
420
nA
gfs
forward transconductance
VDS = 10 V; ID = 18.75 A
-
20
-
S
RDS(on)
drain-source on-state
resistance
VGS = VGS(th) + 3.75 V;
ID = 12.49 A
-
0.09
-
Ω
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
2.3
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
300
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V;
f = 1 MHz
-
103
-
pF
Table 7.
RF characteristics
Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 900 mA; Tcase = 25 °C;
unless otherwise specified; in a class-AB production test circuit
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 300 W
25
26.5
28
dB
RLin
input return loss
PL = 300 W
10
13
-
dB
ηD
drain efficiency
PL = 300 W
67
70
-
%
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
3 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj141
800
Coss
(pF)
600
400
200
0
0
10
20
30
40
50
VDS (V)
VGS = 0 V; f = 1 MHz.
Fig 1.
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
6.1 Ruggedness in class-AB operation
The BLF573S is capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 900 mA; PL = 300 W; f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Measured ZS and ZL test circuit impedances.
f
ZS
ZL
MHz
Ω
Ω
225
0.7 + j2.0
1.95 + j2.0
drain
ZL
gate
ZS
001aaf059
Fig 2.
Definition of transistor impedance
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
4 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
7.2 Reliability
001aaj142
105
Years
(1)
(2)
(3)
(4)
(5)
(7)
(8)
(9) (10) (11)
(6)
104
103
102
10
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3.
BLF573S electromigration (ID, total device)
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
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BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
8. Test information
8.1 RF Performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aaj143
30
ηD
(%)
ηD
Gp
(dB)
28
001aaj144
30
80
Gp
(dB)
60
28
26
40
26
24
20
24
(7)
(6)
(5)
Gp
22
0
100
200
0
400
300
(1)
(2)
(3)
(4)
22
0
100
200
PL (W)
300
400
PL (W)
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
VDS = 50 V; f = 225 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
Fig 4.
Power gain and drain efficiency as functions of
load power; typical values
Fig 5.
Power gain as function of load power; typical
values
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
6 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
001aaj145
60
PL
(dBm)
58
ideal PL
(2)
56
(1)
PL
54
52
50
24
26
28
30
32
34
Pi (dBm)
VDS = 50 V; IDq = 900 mA; f = 225 MHz.
(1) PL(1dB) = 55.2 dBm (331 W)
(2) PL(3dB) = 55.8 dBm (380 W)
Fig 6.
Load power as function of input power; typical values
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
7 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
8.1.2 2-Tone CW
001aaj146
30
Gp
(dB)
ηD
(%)
ηD
28
26
Gp
24
22
0
100
200
300
IMD3
(dBc)
60
−20
40
−40
20
001aaj147
0
80
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
−60
−80
0
400
500
PL(PEP) (W)
0
VDS = 50 V; IDq = 900 mA; f1 = 224.95 MHz;
f2 = 225.05 MHz.
100
200
300
400
500
PL(PEP) (W)
VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz.
(1) IDq = 500 mA
(2) IDq = 700 mA
(3) IDq = 900 mA
(4) IDq = 1100 mA
(5) IDq = 1300 mA
(6) IDq = 1500 mA
(7) IDq = 1700 mA
(8) IDq = 1800 mA
Fig 7.
Power gain and drain efficiency as functions of
peak envelope load power; typical values
Fig 8.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
8.2 Test circuit
Table 9.
List of components
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
Component
Description
Value
B1
ferrite SMD bead
100 Ω; 100 MHz
Remarks
Ferroxcube BDS3/3/8.9-4S2 or equivalent
C1, C18
multilayer ceramic chip capacitor
100 pF
[1]
C2
multilayer ceramic chip capacitor
39 pF
[1]
C3, C4
multilayer ceramic chip capacitor
180 pF
[1]
C5, C6, C7
multilayer ceramic chip capacitor
220 pF
[1]
C8, C20
multilayer ceramic chip capacitor
1 nF
[1]
C9
multilayer ceramic chip capacitor
4.7 µF
C10
multilayer ceramic chip capacitor
30 pF
[1]
C11, C12, C13 multilayer ceramic chip capacitor
51 pF
[1]
C14
43 pF
[1]
multilayer ceramic chip capacitor
TDK C4532X7R1E475MT020U or equivalent
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
8 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
Table 9.
List of components …continued
For production test circuit, see Figure 9 and Figure 10.
Printed-Circuit Board (PCB): Rogers 5880; εr = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 µm.
Component
Description
Value
Remarks
C15
multilayer ceramic chip capacitor
33 pF
[1]
C16
multilayer ceramic chip capacitor
36 pF
[1]
C17
multilayer ceramic chip capacitor
16 pF
[1]
C19
electrolytic capacitor
220 µF; 63 V
L1
2 turns enamelled copper wire
D = 3 mm;
d = 1 mm;
length = 2 mm;
leads = 2 × 6 mm
L2
4 turns enamelled copper wire
D = 2 mm;
d = 1 mm;
length = 13 mm;
leads = 2 × 5 mm
L3
stripline
-
(L × W) 96 mm × 3 mm
L4, L5
stripline
-
(L × W) 15 mm × 8 mm
L6
stripline
-
(L × W) 105 mm × 6 mm
L7
stripline
-
(L × W) 3 mm × 6 mm
L8
stripline
-
(L × W) 12 mm × 6 mm
R1
metal film resistor
100 Ω; 0.6 W
[1]
American Technical Ceramics type 100B or capacitor of same quality.
VDD
C19
VGG
C9
B1
C8
C20
R1
L1
C13
input
50 Ω C1
C3
C14
C7
L7
L3
L4
C2
L5
C4
C5
C6
L2
L6
C16
C10
C11
L8
C18
output
50 Ω
C17
C12
C15
001aaj148
Fig 9.
Class-AB common-source production test circuit
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
9 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
B1
C19
C9
C8
C7
C3
C20
C13 C14
R1
L2
L1
C18
C1
C2
C4
C5
C6
C17
C16
C11 C12
C10
C15
001aaj149
Fig 10. Component layout for class-AB production test circuit
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
10 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A
F
3
D
D1
c
U1
1
L
H
E1
U2
E
2
w2 M D M
b
0
5
Q
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.72
3.43
12.83
12.57
0.15
0.08
inches
0.186
0.135
0.505 0.006
0.495 0.003
OUTLINE
VERSION
E
E1
F
H
L
Q
U1
U2
w2
20.02 19.96
19.61 19.66
9.50
9.30
9.53
9.25
1.14
0.89
19.94
18.92
5.33
4.32
1.70
1.45
20.70
20.45
9.91
9.65
0.25
0.788 0.786
0.772 0.774
0.374 0.375
0.366 0.364
0.045 0.785
0.035 0.745
0.210
0.170
0.067 0.815
0.057 0.805
D
D1
REFERENCES
IEC
JEDEC
JEITA
0.390
0.010
0.380
EUROPEAN
PROJECTION
ISSUE DATE
03-01-10
07-05-09
SOT502B
Fig 11. Package outline SOT502B
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
11 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
10. Abbreviations
Table 10.
Abbreviations
Acronym
Description
CW
Continuous Wave
EDGE
Enhanced Data rates for GSM Evolution
GSM
Global System for Mobile communications
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface Mount Device
TTF
Time To Failure
VHF
Very High Frequency
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF573S_1
20081208
Preliminary data sheet
-
-
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
12 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF573S_1
Preliminary data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 01 — 8 December 2008
13 of 14
BLF573S
NXP Semiconductors
HF / VHF power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
6.1
7
7.1
7.2
8
8.1
8.1.1
8.1.2
8.2
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation. . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information . . . . . . . . . . . . . . . . . . . 4
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF Performance . . . . . . . . . . . . . . . . . . . . . . . . 6
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 8 December 2008
Document identifier: BLF573S_1