74LVC1G332 Single 3-input OR gate Rev. 01 — 11 October 2006 Product data sheet 1. General description The 74LVC1G332 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications. Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall time. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G332 provides one 3-input OR function. 2. Features n Wide supply voltage range from 1.65 V to 5.5 V n High noise immunity n Complies with JEDEC standard: u JESD8-7 (1.65 V to 1.95 V) u JESD8-5 (2.3 V to 2.7 V) u JESD8B/JESD36 (2.7 V to 3.6 V) n ±24 mA output drive (VCC = 3.0 V) n CMOS low power consumption n Latch-up performance exceeds 250 mA n Direct interface with TTL levels n Inputs accept voltages up to 5 V n ESD protection: u HBM JESD22-A114-D exceeds 2000 V u MM JESD22-A115-A exceeds 200 V u CDM JESD22-C101-C exceeds 1000 V n Multiple package options n Specified from −40 °C to +85 °C and −40 °C to +125 °C 74LVC1G332 NXP Semiconductors Single 3-input OR gate 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LVC1G332GW −40 °C to +125 °C SC-88 plastic surface-mounted package; 6 leads SOT363 74LVC1G332GV −40 °C to +125 °C SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 74LVC1G332GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm 74LVC1G332GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 2. Marking Type number Marking code 74LVC1G332GW YG 74LVC1G332GV YG 74LVC1G332GM YG 74LVC1G332GF YG 5. Functional diagram B 3 B 1 A 6 C Y 001aad933 Fig 1. Logic symbol 4 1 3 6 1 4 001aad934 Fig 2. IEC logic symbol 74LVC1G332_1 Product data sheet Y A C 001aad935 Fig 3. Logic diagram © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 2 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 6. Pinning information 6.1 Pinning 74LVC1G332 74LVC1G332 A 1 6 A 1 6 C GND 2 5 VCC C GND 2 5 VCC B 3 4 Y B 3 4 Y 74LVC1G332 A 1 6 C GND 2 5 VCC B 3 4 Y 001aaf474 001aaf475 Transparent top view Transparent top view 001aaf473 Fig 4. Pin configuration SOT363 (SC-88) and SOT457 (SC-74) Fig 5. Pin configuration SOT886 (XSON6) Fig 6. Pin configuration SOT891 (XSON6) 6.2 Pin description Table 3. Pin description Symbol Pin Description A 1 data input A GND 2 ground (0 V) B 3 data input B Y 4 data output Y VCC 5 supply voltage C 6 data input C 7. Functional description Table 4. Function table[1] Input Output A B C Y H X X H X H X H X X H H L L L L [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 3 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage IIK input clamping current VI input voltage IOK output clamping current output voltage VO IO output current ICC supply current IGND ground current Ptot total power dissipation Tstg storage temperature Conditions VI < 0 V [1] Min Max Unit −0.5 +6.5 V - −50 mA −0.5 +6.5 V - ±50 mA Active mode [1][2] −0.5 VCC + 0.5 V Power-down mode [1][2] −0.5 +6.5 V - ±50 mA - 100 mA - −100 mA - 250 mW −65 +150 °C VO > VCC or VO < 0 V VO = 0 V to VCC Tamb = −40 °C to +125 °C [3] [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For SC-88 packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC Conditions Min Typ Max Unit supply voltage 1.65 - 5.5 V VI input voltage 0 - 5.5 V VO output voltage Active mode 0 - VCC V VCC = 0 V; Power-down mode 0 - 5.5 V Tamb ambient temperature −40 - +125 °C ∆t/∆V input transition rise and fall rate VCC = 1.65 V to 2.7 V 0 - 20 ns/V 0 - 10 ns/V VCC = 2.7 V to 5.5 V 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 4 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 10. Static characteristics Table 7. Static characteristics At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ[1] Max Unit Tamb = −40 °C to +85 °C VIH VIL VOH VOL HIGH-level input voltage LOW-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.7 - - V VCC = 2.7 V to 3.6 V 2.0 - - V VCC = 4.5 V to 5.5 V 0.7 × VCC - - V VCC = 1.65 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3 × VCC V IO = −100 µA; VCC = 1.65 V to 5.5 V VCC − 0.1 - - V IO = −4 mA; VCC = 1.65 V 1.2 - - V IO = −8 mA; VCC = 2.3 V 1.9 - - V HIGH-level output voltage VI = VIH or VIL LOW-level output voltage IO = −12 mA; VCC = 2.7 V 2.2 - - V IO = −24 mA; VCC = 3.0 V 2.3 - - V IO = −32 mA; VCC = 4.5 V 3.8 - - V VI = VIH or VIL IO = 100 µA; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.45 V IO = 8 mA; VCC = 2.3 V - - 0.3 V IO = 12 mA; VCC = 2.7 V - - 0.4 V IO = 24 mA; VCC = 3.0 V - - 0.55 V IO = 32 mA; VCC = 4.5 V - - 0.55 V - ±0.1 ±5 µA II input leakage current VCC = 0 V to 5.5 V; VI = 5.5 V or GND IOFF power-off leakage current VCC = 0 V; VI or VO = 5.5 V - ±0.1 ±10 µA ICC supply current VCC = 1.65 V to 5.5 V; VI = VCC or GND; IO = 0 A - 0.1 10 µA ∆ICC additional supply current per pin; VCC = 2.3 V to 5.5 V; VI = VCC − 0.6 V; IO = 0 A - 5 500 µA CI input capacitance VCC = 3.3 V; VI = GND to VCC - 3 - pF VCC = 1.65 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.7 - - V VCC = 2.7 V to 3.6 V 2.0 - - V VCC = 4.5 V to 5.5 V 0.7 × VCC - - V VCC = 1.65 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3 × VCC V Tamb = −40 °C to +125 °C VIH VIL HIGH-level input voltage LOW-level input voltage 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 5 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate Table 7. Static characteristics …continued At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VOH HIGH-level output voltage VI = VIH or VIL IO = −100 µA; VCC = 1.65 V to 5.5 V LOW-level output voltage VOL Min Typ[1] Max Unit VCC − 0.1 - V - IO = −4 mA; VCC = 1.65 V 0.95 - - V IO = −8 mA; VCC = 2.3 V 1.7 - - V IO = −12 mA; VCC = 2.7 V 1.9 - - V IO = −24 mA; VCC = 3.0 V 2.0 - - V IO = −32 mA; VCC = 4.5 V 3.4 - - V IO = 100 µA; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.70 V IO = 8 mA; VCC = 2.3 V - - 0.45 V IO = 12 mA; VCC = 2.7 V - - 0.60 V IO = 24 mA; VCC = 3.0 V - - 0.80 V IO = 32 mA; VCC = 4.5 V - - 0.80 V VI = VIH or VIL II input leakage current - - ±100 µA IOFF power-off leakage current VCC = 0 V; VI or VO = 5.5 V - - ±200 µA ICC supply current VCC = 1.65 V to 5.5 V; VI = VCC or GND; IO = 0 A - - 200 µA ∆ICC additional supply current per pin; VCC = 2.3 V to 5.5 V; VI = VCC − 0.6 V; IO = 0 A - - 5000 µA [1] VCC = 0 V to 5.5 V; VI = 5.5 V or GND All typical values are measured at VCC = 3.3 V and Tamb = 25 °C. 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8. Symbol Parameter tpd −40 °C to +85 °C Conditions Min Max Min Max VCC = 1.65 V to 1.95 V 1.5 4.7 17.2 1.5 21.5 ns VCC = 2.3 V to 2.7 V 1.0 3.0 6.2 1.0 7.8 ns VCC = 2.7 V 1.0 3.0 6.0 1.0 7.5 ns VCC = 3.0 V to 3.6 V 1.0 2.6 4.8 1.0 6.2 ns VCC = 4.5 V to 5.5 V 1.0 1.9 3.5 1.0 4.4 ns [2] propagation delay A, B and C to Y; see Figure 7 74LVC1G332_1 Product data sheet −40 °C to +125 °C Unit Typ[1] © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 6 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate Table 8. Dynamic characteristics …continued Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8. Symbol Parameter CPD power dissipation capacitance −40 °C to +85 °C Conditions [3] VI = GND to VCC; VCC = 3.3 V −40 °C to +125 °C Unit Min Typ[1] Max Min Max - 12 - - - [1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(CL × VCC2 × fo) = sum of outputs. pF 12. AC waveforms VI VM A, B, C input GND t PHL t PLH VOH VM Y output VOL 001aad936 Measurement points are given in Table 9. VOL and VOH are typical output voltage drops that occur with the output load. Fig 7. The input A, B and C to output Y propagation delays Table 9. Measurement points Supply voltage Input Output VCC VM VM 1.65 V to 1.95 V 0.5 × VCC 0.5 × VCC 2.3 V to 2.7 V 0.5 × VCC 0.5 × VCC 2.7 V 1.5 V 1.5 V 3.0 V to 3.6 V 1.5 V 1.5 V 4.5 V to 5.5 V 0.5 × VCC 0.5 × VCC 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 7 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate VEXT VCC VI PULSE GENERATOR RL VO DUT RT CL RL mna616 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance; should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 10. Test data Supply voltage Input Load VEXT VCC VI tr = t f CL RL tPLH, tPHL 1.65 V to 1.95 V VCC ≤ 2.0 ns 30 pF 1 kΩ open 2.3 V to 2.7 V VCC ≤ 2.0 ns 30 pF 500 Ω open 2.7 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 3.0 V to 3.6 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 4.5 V to 5.5 V VCC ≤ 2.5 ns 50 pF 500 Ω open 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 8 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 13. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 c bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT363 JEDEC JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig 9. Package outline SOT363 (SC-88) 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 9 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate Plastic surface-mounted package (TSOP6); 6 leads D SOT457 E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC SOT457 JEDEC JEITA SC-74 EUROPEAN PROJECTION ISSUE DATE 05-11-07 06-03-16 Fig 10. Package outline SOT457 (SC-74) 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 10 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 4 e1 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 11. Package outline SOT886 (XSON6) 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 11 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 L L1 e 6 5 4 e1 e1 A A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-03-11 05-04-06 SOT891 Fig 12. Package outline SOT891 (XSON6) 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 12 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 14. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74LVC1G332_1 20061011 Product data sheet - - 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 13 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] 74LVC1G332_1 Product data sheet © NXP B.V. 2006. All rights reserved. Rev. 01 — 11 October 2006 14 of 15 74LVC1G332 NXP Semiconductors Single 3-input OR gate 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 11 October 2006 Document identifier: 74LVC1G332_1