PHILIPS 74AUP2G126GM

74AUP2G126
Low-power dual buffer/line driver; 3-state
Rev. 05 — 2 February 2009
Product data sheet
1. General description
The 74AUP2G126 provides the dual non-inverting buffer/line driver with 3-state output.
The 3-state output is controlled by the output enable input (nOE). A LOW level at pin nOE
causes the output to assume a high-impedance OFF-state. This device has the
input-disable feature, which allows floating input signals. The inputs are disabled when the
output enable input nOE is LOW.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V. This device ensures a very low
static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF
circuitry disables the output, preventing a damaging backflow current through the device
when it is powered down.
2. Features
n Wide supply voltage range from 0.8 V to 3.6 V
n High noise immunity
n Complies with JEDEC standards:
u JESD8-12 (0.8 V to 1.3 V)
u JESD8-11 (0.9 V to 1.65 V)
u JESD8-7 (1.2 V to 1.95 V)
u JESD8-5 (1.8 V to 2.7 V)
u JESD8-B (2.7 V to 3.6 V)
n ESD protection:
u HBM JESD22-A114E Class 3A exceeds 5000 V
u MM JESD22-A115-A exceeds 200 V
u CDM JESD22-C101C exceeds 1000 V
n Low static power consumption; ICC = 0.9 µA (maximum)
n Latch-up performance exceeds 100 mA per JESD78 Class II
n Inputs accept voltages up to 3.6 V
n Low noise overshoot and undershoot < 10 % of VCC
n Input-disable feature allows floating input conditions
n IOFF circuitry provides partial Power-down mode operation
n Multiple package options
n Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP2G126DC
−40 °C to +125 °C
VSSOP8
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
74AUP2G126GT
−40 °C to +125 °C
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1 × 1.95 × 0.5 mm
74AUP2G126GD
−40 °C to +125 °C
XSON8U
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; UTLP based; body 3 × 2 × 0.5 mm
74AUP2G126GM
−40 °C to +125 °C
XQFN8U
plastic extremely thin quad flat package; no leads;
8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm
SOT902-1
4. Marking
Table 2.
Marking codes
Type number
Marking code
74AUP2G126DC
p26
74AUP2G126GT
p26
74AUP2G126GD
p26
74AUP2G126GM
p26
5. Functional diagram
1A
1Y
1OE
2A
nA
2Y
nY
2OE
nOE
mna234
001aah787
Fig 1.
Logic symbol
Fig 2.
Logic diagram (one gate)
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
2 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
6. Pinning information
6.1 Pinning
74AUP2G126
1OE
1
8
VCC
1A
2
7
2OE
2Y
3
6
1Y
GND
4
5
2A
74AUP2G126
1OE
1
8
VCC
1A
2
7
2OE
2Y
3
6
1Y
GND
4
5
2A
001aae998
Transparent top view
001aae997
Fig 3.
Pin configuration SOT765-1 (VSSOP8)
Fig 4.
Pin configuration SOT833-1 (XSON8)
74AUP2G126
74AUP2G126
1
8
VCC
1A
2
7
2OE
2Y
3
6
1Y
GND
4
5
2A
1
1Y
2A
8
2OE
7
1OE
2
6
1A
3
5
2Y
GND
4
1OE
VCC
terminal 1
index area
001aaj474
Transparent top view
Transparent top view
Fig 5.
001aae999
Pin configuration SOT996-2 (XSON8U)
Fig 6.
Pin configuration SOT902-1 (XQFN8U)
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
SOT765-1, SOT833-1 and
SOT996-2
SOT902-1
1OE
1
7
output enable input (active HIGH)
1A
2
6
data input
2Y
3
5
data output
GND
4
4
ground (0 V)
2A
5
3
data input
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
3 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 3.
Pin description …continued
Symbol
Pin
1Y
Description
SOT765-1, SOT833-1 and
SOT996-2
SOT902-1
6
2
data output
2OE
7
1
output enable input (active HIGH)
VCC
8
8
supply voltage
7. Functional description
Table 4.
Function table[1]
Input
Output
nOE
nA
nY
H
L
L
H
H
H
L
X
Z
[1]
H = HIGH voltage level;
L = LOW voltage level;
X = don’t care;
Z = high-impedance OFF-state.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI
input voltage
IOK
output clamping current
Conditions
VI < 0 V
[1]
VO < 0 V
[1]
Min
Max
Unit
−0.5
+4.6
V
−50
-
mA
−0.5
+4.6
V
−50
-
mA
−0.5
+4.6
V
VO
output voltage
Active mode and Power-down mode
IO
output current
VO = 0 V to VCC
-
±20
mA
ICC
supply current
-
50
mA
IGND
ground current
−50
-
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
total power dissipation
Ptot
Tamb = −40 °C to +125 °C
[2]
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For VSSOP8 packages: above 110 °C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8, XSON8U and XQFN8U packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
4 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
9. Recommended operating conditions
Table 6.
Operating conditions
Symbol
Parameter
VCC
Conditions
Min
Max
Unit
supply voltage
0.8
3.6
V
VI
input voltage
0
3.6
V
VO
output voltage
Tamb
ambient temperature
∆t/∆V
input transition rise and fall rate
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
3.6
V
−40
+125
°C
0
200
ns/V
VCC = 0.8 V to 3.6 V
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VCC = 0.8 V
Typ
Max
Unit
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
Tamb = 25 °C
VIH
VIL
VOH
VOL
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
VI = VIH or VIL
IO = −1.1 mA; VCC = 1.1 V
0.75 × VCC -
-
V
IO = −1.7 mA; VCC = 1.4 V
1.11
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.32
-
-
V
IO = −2.3 mA; VCC = 2.3 V
2.05
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.9
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.72
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.6
-
-
V
VI = VIH or VIL
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.31
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.31
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.31
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.44
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.31
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.44
V
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
5 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.1
µA
IOZ
OFF-state output current
VI = VIH or VIL; VO = 0 V to 3.6 V;
VCC = 0 V to 3.6 V
-
-
±0.1
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.2
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.2
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.5
µA
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
40
µA
nOE input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
110
µA
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
[2]
-
-
1
µA
CI
input capacitance
VI = GND or VCC; VCC = 0 V to 3.6 V
-
0.9
-
pF
CO
output capacitance
output enabled; VO = GND; VCC = 0 V
-
1.7
-
pF
output disabled; VO = GND or VCC;
VCC = 0 V to 3.6 V
-
1.5
-
pF
VCC = 0.8 V
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
V
Tamb = −40 °C to +85 °C
VIH
VIL
VOH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
VCC = 3.0 V to 3.6 V
2.0
-
-
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.7 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
1.03
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.30
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.97
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.85
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.67
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.55
-
-
V
VI = VIH or VIL
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
6 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VOL
VI = VIH or VIL
LOW-level output voltage
Min
Typ
Max
Unit
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.37
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.35
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.33
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.45
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.33
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.45
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.5
µA
IOZ
OFF-state output current
VI = VIH or VIL; VO = 0 V to 3.6 V;
VCC = 0 V to 3.6 V
-
-
±0.5
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.5
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.6
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.9
µA
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
50
µA
nOE input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
120
µA
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
[2]
-
-
1
µA
VCC = 0.8 V
0.75 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
-
V
Tamb = −40 °C to +125 °C
VIH
VIL
VOH
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.25 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.30 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.11 -
-
V
IO = −1.1 mA; VCC = 1.1 V
0.6 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
0.93
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.17
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.77
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.67
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.40
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.30
-
-
V
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
7 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
VOL
VI = VIH or VIL
LOW-level output voltage
Min
Typ
Max
Unit
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.11
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.33 × VCC V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.41
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.39
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.50
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.75
µA
IOZ
OFF-state output current
VI = VIH or VIL; VO = 0 V to 3.6 V;
VCC = 0 V to 3.6 V
-
-
±0.75
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.75
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.75
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
1.4
µA
∆ICC
additional supply current
data input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
75
µA
nOE input; VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
[1]
-
-
180
µA
all inputs; VI = GND to 3.6 V;
nOE = GND; VCC = 0.8 V to 3.6 V
[2]
-
-
1
µA
[1]
One input at VCC − 0.6 V, other input at VCC or GND.
[2]
To show ICC remains very low when the input-disable feature is enabled.
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
8 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 0.8 V
-
20.6
-
-
-
-
VCC = 1.1 V to 1.3 V
2.8
5.5
10.5
2.5
11.7
12.9
ns
VCC = 1.4 V to 1.6 V
2.2
3.9
6.1
2.0
7.3
8.1
ns
VCC = 1.65 V to 1.95 V
1.9
3.2
4.1
1.7
6.1
6.7
ns
VCC = 2.3 V to 2.7 V
1.6
2.6
3.6
1.4
4.3
4.9
ns
1.4
2.4
3.1
1.2
3.9
4.4
ns
VCC = 0.8 V
-
71.6
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
2.8
6.2
12.4
2.6
13.6
13.6
ns
VCC = 1.4 V to 1.6 V
2.3
4.2
6.9
2.2
7.4
7.7
ns
VCC = 1.65 V to 1.95 V
1.9
3.3
5.3
1.7
5.9
6.2
ns
VCC = 2.3 V to 2.7 V
1.5
2.4
3.6
1.4
3.8
4.1
ns
1.3
2.0
2.9
1.2
3.2
3.4
ns
VCC = 0.8 V
-
10.3
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
2.6
4.2
6.2
2.9
6.4
6.5
ns
VCC = 1.4 V to 1.6 V
2.1
3.2
4.4
2.2
4.6
4.7
ns
CL = 5 pF
tpd
propagation delay
nA to nY; see Figure 7
[2]
VCC = 3.0 V to 3.6 V
ten
enable time
nOE to nY; see Figure 8
[3]
VCC = 3.0 V to 3.6 V
tdis
disable time
nOE to nY; see Figure 8
ns
[4]
VCC = 1.65 V to 1.95 V
2.1
3.1
4.4
1.7
4.6
4.8
ns
VCC = 2.3 V to 2.7 V
1.7
2.4
3.2
1.4
3.4
3.6
ns
VCC = 3.0 V to 3.6 V
2.1
2.8
3.6
1.2
3.7
3.8
ns
VCC = 0.8 V
-
24.0
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.2
6.4
12.3
3.0
13.8
15.2
ns
VCC = 1.4 V to 1.6 V
2.1
4.5
7.3
1.9
8.5
9.4
ns
CL = 10 pF
tpd
propagation delay
nA to nY; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
1.9
3.8
5.5
1.7
6.8
7.6
ns
VCC = 2.3 V to 2.7 V
2.1
3.2
4.2
1.6
5.3
5.9
ns
VCC = 3.0 V to 3.6 V
1.8
3.0
3.8
1.6
4.6
5.2
ns
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
9 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
ten
enable time
25 °C
Conditions
disable time
Unit
Min
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 0.8 V
-
75.3
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.2
7.1
14.1
3.0
15.4
15.4
ns
VCC = 1.4 V to 1.6 V
2.2
4.8
8.0
2.1
8.3
8.6
ns
nOE to nY; see Figure 8
[3]
VCC = 1.65 V to 1.95 V
1.8
3.9
5.9
1.7
6.5
6.8
ns
VCC = 2.3 V to 2.7 V
1.5
2.9
4.2
1.4
4.5
4.8
ns
1.4
2.6
3.6
1.3
3.8
4.0
ns
VCC = 0.8 V
-
12.2
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.5
5.3
7.6
3.3
7.9
7.9
ns
VCC = 1.4 V to 1.6 V
2.2
4.1
5.6
2.1
5.7
5.9
ns
VCC = 1.65 V to 1.95 V
2.4
4.2
5.7
1.7
5.8
6.0
ns
VCC = 2.3 V to 2.7 V
1.9
3.2
4.1
1.4
4.3
4.5
ns
VCC = 3.0 V to 3.6 V
2.4
4.1
5.0
1.3
5.2
5.3
ns
VCC = 0.8 V
-
27.4
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.6
7.2
14.1
3.3
15.8
17.5
ns
VCC = 1.4 V to 1.6 V
3.0
5.1
8.1
2.5
9.8
10.9
ns
VCC = 1.65 V to 1.95 V
2.2
4.3
6.3
2.0
7.9
8.8
ns
VCC = 2.3 V to 2.7 V
2.0
3.7
4.9
1.8
6.0
6.7
ns
VCC = 3.0 V to 3.6 V
2.0
3.5
4.4
1.8
5.4
6.1
ns
VCC = 0.8 V
-
79.2
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.6
7.8
15.8
3.3
17.1
17.1
ns
VCC = 1.4 V to 1.6 V
3.0
5.4
8.8
2.9
9.4
9.7
ns
VCC = 1.65 V to 1.95 V
2.1
4.3
6.7
2.0
7.3
7.7
ns
VCC = 2.3 V to 2.7 V
1.8
3.4
4.8
1.7
5.2
5.6
ns
1.6
3.1
4.1
1.5
4.5
4.7
ns
VCC = 0.8 V
-
14.9
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
4.3
6.4
8.5
3.7
9.3
9.4
ns
VCC = 1.4 V to 1.6 V
3.0
5.0
6.6
2.5
6.9
7.0
ns
VCC = 1.65 V to 1.95 V
3.1
5.4
6.6
2.0
7.4
7.5
ns
VCC = 2.3 V to 2.7 V
2.4
4.0
5.0
1.7
5.1
5.5
ns
VCC = 3.0 V to 3.6 V
3.2
5.3
6.2
1.5
6.7
6.9
ns
VCC = 3.0 V to 3.6 V
tdis
−40 °C to +125 °C
Typ[1]
nOE to nY; see Figure 8
[4]
CL = 15 pF
tpd
ten
propagation delay
enable time
nA to nY; see Figure 7
nOE to nY; see Figure 8
[2]
[3]
VCC = 3.0 V to 3.6 V
tdis
disable time
nOE to nY; see Figure 8
[4]
CL = 30 pF
74AUP2G126_5
Product data sheet
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Rev. 05 — 2 February 2009
10 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
tpd
propagation delay
25 °C
Conditions
tdis
enable time
disable time
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 0.8 V
-
37.4
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
4.8
9.5
18.7
4.4
21.4
24.0
ns
VCC = 1.4 V to 1.6 V
4.0
6.7
10.8
3.0
13.0
14.5
ns
nA to nY; see Figure 7
[2]
VCC = 1.65 V to 1.95 V
2.9
5.6
8.4
2.6
10.3
11.5
ns
VCC = 2.3 V to 2.7 V
2.7
4.8
6.3
2.5
7.8
8.7
ns
2.7
4.6
5.8
2.5
7.0
8.3
ns
VCC = 0.8 V
-
90.6
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
4.7
10.0
20.4
4.3
22.0
22.0
ns
VCC = 1.4 V to 1.6 V
3.0
6.9
11.3
3.7
12.0
12.5
ns
VCC = 1.65 V to 1.95 V
2.6
5.6
8.6
3.2
9.5
10.1
ns
VCC = 2.3 V to 2.7 V
2.3
4.5
6.3
2.9
6.8
7.3
ns
VCC = 3.0 V to 3.6 V
2.2
4.2
5.8
2.7
6.4
6.7
ns
VCC = 0.8 V
-
51.6
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
6.0
9.8
13.6
4.7
14.3
14.4
ns
VCC = 1.4 V to 1.6 V
4.5
7.7
10.5
3.0
10.7
11.0
ns
VCC = 1.65 V to 1.95 V
5.2
8.8
11.4
2.6
11.5
11.6
ns
VCC = 2.3 V to 2.7 V
3.9
6.4
7.4
2.3
9.0
10.2
ns
VCC = 3.0 V to 3.6 V
5.5
9.0
10.7
2.2
10.8
12.0
ns
nOE to nY; see Figure 8
nOE to nY; see Figure 8
[3]
[4]
74AUP2G126_5
Product data sheet
Unit
Min
VCC = 3.0 V to 3.6 V
ten
−40 °C to +125 °C
Typ[1]
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
11 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 0.8 V
-
2.7
-
-
-
-
pF
VCC = 1.1 V to 1.3 V
-
2.8
-
-
-
-
pF
VCC = 1.4 V to 1.6 V
-
2.9
-
-
-
-
pF
VCC = 1.65 V to 1.95 V
-
3.0
-
-
-
-
pF
VCC = 2.3 V to 2.7 V
-
3.6
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
4.2
-
-
-
-
pF
CL = 5 pF, 10 pF, 15 pF and 30 pF
power dissipation
capacitance
CPD
output enabled; fi = 1 MHz;
VI = GND to VCC
[5]
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
ten is the same as tPZH and tPZL.
[4]
tdis is the same as tPHZ and tPLZ.
[5]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
12 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
12. Waveforms
VI
VM
nA input
GND
tPHL
tPLH
VOH
VM
nY output
VOL
mna230
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 7.
Table 9.
The data input (nA) to output (nY) propagation delays
Measurement points
Supply voltage
Output
Input
VCC
VM
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
VI
nOE input
VM
GND
t PLZ
t PZL
VCC
output
LOW-to-OFF
OFF-to-LOW
VM
VX
VOL
t PZH
t PHZ
VOH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
enabled
outputs
disabled
mna949
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8.
Table 10.
Enable and disable times
Measurement points
Supply voltage
Input
Output
VCC
VM
VM
VX
VY
0.8 V to 1.6 V
0.5 × VCC
0.5 × VCC
VOL + 0.1 V
VOH − 0.1 V
1.65 V to 2.7 V
0.5 × VCC
0.5 × VCC
VOL + 0.15 V
VOH − 0.15 V
3.0 V to 3.6 V
0.5 × VCC
0.5 × VCC
VOL + 0.3 V
VOH − 0.3 V
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
13 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
VCC
VEXT
5 kΩ
G
VI
VO
DUT
RT
CL
RL
001aac521
Test data is given in Table 11.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 9.
Table 11.
Load circuitry for switching times
Test data
Supply voltage
Load
VEXT
VCC
CL
RL[1]
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF
5 kΩ or 1 MΩ
[1]
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
open
GND
2 × VCC
For measuring enable and disable times RL = 5 kΩ.
For measuring propagation delays, set-up and hold times and pulse width RL = 1 MΩ.
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
14 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
13. Package outline
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
D
E
SOT765-1
A
X
c
y
HE
v M A
Z
5
8
Q
A
A2
A1
pin 1 index
(A3)
θ
Lp
1
4
e
L
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(2)
e
HE
L
Lp
Q
v
w
y
Z(1)
θ
mm
1
0.15
0.00
0.85
0.60
0.12
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
0.5
3.2
3.0
0.4
0.40
0.15
0.21
0.19
0.2
0.13
0.1
0.4
0.1
8°
0°
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT765-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-06-07
MO-187
Fig 10. Package outline SOT765-1 (VSSOP8)
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
15 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
1
2
SOT833-1
b
4
3
4×
(2)
L
L1
e
8
7
6
e1
5
e1
e1
8×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A(1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
2.0
1.9
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT833-1
---
MO-252
---
EUROPEAN
PROJECTION
ISSUE DATE
07-11-14
07-12-07
Fig 11. Package outline SOT833-1 (XSON8)
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
16 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XSON8U: plastic extremely thin small outline package; no leads;
8 terminals; UTLP based; body 3 x 2 x 0.5 mm
B
D
SOT996-2
A
A
E
A1
detail X
terminal 1
index area
e1
v
w
b
e
L1
1
4
8
5
C
C A B
C
M
M
y
y1 C
L2
L
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
D
E
e
e1
L
L1
L2
v
w
y
y1
mm
0.5
0.05
0.00
0.35
0.15
2.1
1.9
3.1
2.9
0.5
1.5
0.5
0.3
0.15
0.05
0.6
0.4
0.1
0.05
0.05
0.1
REFERENCES
OUTLINE
VERSION
IEC
SOT996-2
---
JEDEC
JEITA
---
EUROPEAN
PROJECTION
ISSUE DATE
07-12-18
07-12-21
Fig 12. Package outline SOT996-2 (XSON8U)
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
17 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
XQFN8U: plastic extremely thin quad flat package; no leads;
8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm
B
D
SOT902-1
A
terminal 1
index area
E
A
A1
detail X
L1
e
e
C
∅v M C A B
∅w M C
L
4
y1 C
y
5
3
metal area
not for soldering
e1
b
2
6
e1
7
1
terminal 1
index area
8
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
D
E
e
e1
L
L1
v
w
y
y1
mm
0.5
0.05
0.00
0.25
0.15
1.65
1.55
1.65
1.55
0.55
0.5
0.35
0.25
0.15
0.05
0.1
0.05
0.05
0.05
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT902-1
---
MO-255
---
EUROPEAN
PROJECTION
ISSUE DATE
05-11-25
07-11-14
Fig 13. Package outline SOT902-1 (XQFN8U)
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
18 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
14. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal-Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AUP2G126_5
20090202
Product data sheet
-
74AUP2G126_4
Modifications:
•
Pin description table updated.
74AUP2G126_4
20090114
Product data sheet
-
74AUP2G126_3
74AUP2G126_3
20080409
Product data sheet
-
74AUP2G126_2
74AUP2G126_2
20070515
Product data sheet
-
74AUP2G126_1
74AUP2G126_1
20061009
Product data sheet
-
-
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
19 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
74AUP2G126_5
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 05 — 2 February 2009
20 of 21
74AUP2G126
NXP Semiconductors
Low-power dual buffer/line driver; 3-state
18. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 19
Legal information. . . . . . . . . . . . . . . . . . . . . . . 20
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 20
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Contact information. . . . . . . . . . . . . . . . . . . . . 20
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 2 February 2009
Document identifier: 74AUP2G126_5