PHILIPS 74AUP2G00GT

74AUP2G00
Low-power dual 2-input NAND gate
Rev. 01 — 25 August 2006
Product data sheet
1. General description
The 74AUP2G00 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible TTL families.
Schmitt-trigger action at all inputs makes the circuit tolerant to slower input rise and fall
times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire
VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial Power-down applications using IOFF.
The IOFF circuitry disables the output, preventing the damaging backflow current through
the device when it is powered down.
The 74AUP2G00 provides the dual 2-input NAND function.
2. Features
■ Wide supply voltage range from 0.8 V to 3.6 V
■ High noise immunity
■ Complies with JEDEC standards:
◆ JESD8-12 (0.8 V to 1.3 V)
◆ JESD8-11 (0.9 V to 1.65 V)
◆ JESD8-7 (1.2 V to 1.95 V)
◆ JESD8-5 (1.8 V to 2.7 V)
◆ JESD8-B (2.7 V to 3.6 V)
■ ESD protection:
◆ HBM JESD22-A114-D Class 3A exceeds 4000 V
◆ MM JESD22-A115-A exceeds 200 V
◆ CDM JESD22-C101-C exceeds 1000 V
■ Low static power consumption; ICC = 0.9 µA (maximum)
■ Latch-up performance exceeds 100 mA per JESD 78 Class II
■ Inputs accept voltages up to 3.6 V
■ Low noise overshoot and undershoot < 10 % of VCC
■ IOFF circuitry provides partial Power-down mode operation
■ Multiple package options
■ Specified from −40 °C to +85 °C and −40 °C to +125 °C
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
Version
74AUP2G00DC
−40 °C to +125 °C
VSSOP8
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
74AUP2G00GT
−40 °C to +125 °C
XSON8
plastic extremely thin small outline package; no leads; SOT833-1
8 terminals; body 1 × 1.95 × 0.5 mm
74AUP2G00GM
−40 °C to +125 °C
XQFN8
plastic extremely thin quad flat package; no leads; 8
terminals; body 1.6 × 1.6 × 0.5 mm
SOT902-1
4. Marking
Table 2.
Marking
Type number
Marking code
74AUP2G00DC
p00
74AUP2G00GT
p00
74AUP2G00GM
p00
5. Functional diagram
1
1
1A
2
1B
5
2A
6
2B
&
7
2
1Y
7
2Y
3
B
5
&
3
Y
6
A
mna712
Fig 1. Logic symbol
mna713
Fig 2. IEC logic symbol
mna099
Fig 3. Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74AUP2G00
1A
1
8
VCC
1B
2
7
1Y
2Y
3
6
2B
GND
4
5
2A
001aae362
Fig 4. Pin configuration SOT765-1 (VSSOP8)
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
2 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
74AUP2G00
1
8
VCC
1B
2
7
1Y
2Y
3
6
2B
1Y
1
2B
2A
7
1A
2
6
1B
3
5
2Y
4
1A
8
74AUP2G00
VCC
terminal 1
index area
4
5
2A
GND
GND
001aae363
001aae364
Transparent top view
Transparent top view
Fig 5. Pin configuration SOT833-1 (XSON8)
Fig 6. Pin configuration SOT902-1 (XQFN8)
6.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
SOT765-1 and SOT833-1
SOT902-1
1A
1
7
data input 1A
1B
2
6
data input 1B
2Y
3
5
data output 2Y
GND
4
4
ground (0 V)
2A
5
3
data input 2A
2B
6
2
data input 2B
1Y
7
1
data output 1Y
VCC
8
8
supply voltage
7. Functional description
Table 4.
Function table[1]
Input
Output
nA
nB
nY
L
L
H
L
H
H
H
L
H
H
H
L
[1]
H = HIGH voltage level;
L = LOW voltage level.
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
3 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI
input voltage
IOK
output clamping current
Conditions
VI < 0 V
[1]
VO < 0 V
[1]
Min
Max
Unit
−0.5
+4.6
V
-
−50
mA
−0.5
+4.6
V
-
−50
mA
−0.5
+4.6
V
VO
output voltage
Active mode and Power-down mode
IO
output current
VO = 0 V to VCC
-
±20
mA
ICC
supply current
-
+50
mA
IGND
ground current
-
−50
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
total power dissipation
Ptot
Tamb = −40 °C to +125 °C
[2]
[1]
The minimum input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For VSSOP8 packages: above 110 °C the value of Ptot derates linearly with 8.0 mW/K.
For XSON8 and XQFN8 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol
Parameter
VCC
supply voltage
VI
input voltage
VO
output voltage
Tamb
ambient temperature
∆t/∆V
input transition rise and fall rate
Conditions
Max
Unit
0.8
3.6
V
0
3.6
V
Active mode
0
VCC
V
Power-down mode; VCC = 0 V
0
3.6
V
−40
+125
°C
0
200
ns/V
VCC = 0.8 V to 3.6 V
74AUP2G00_1
Product data sheet
Min
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
4 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Tamb = 25 °C
VIH
VIL
VOH
VOL
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
VCC = 0.8 V
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.75 × VCC -
-
V
IO = −1.7 mA; VCC = 1.4 V
1.11
-
V
VI = VIH or VIL
-
IO = −1.9 mA; VCC = 1.65 V
1.32
-
-
V
IO = −2.3 mA; VCC = 2.3 V
2.05
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.9
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.72
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.6
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
VI = VIH or VIL
IO = 1.7 mA; VCC = 1.4 V
-
-
0.31
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.31
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.31
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.44
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.31
V
IO = 4.0 mA; VCC = 3.0 V
-
-
0.44
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
-
-
±0.1
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.2
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.2
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.5
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
40
µA
CI
input capacitance
VCC = 0 V to 3.6 V; VI = GND or VCC
-
0.8
-
pF
CO
output capacitance
VO = GND; VCC = 0 V
-
1.7
-
pF
74AUP2G00_1
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
5 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VCC = 0.8 V
Typ
Max
Unit
0.70 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.65 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.30 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.35 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
Tamb = −40 °C to +85 °C
VIH
VIL
VOH
VOL
HIGH-level input voltage
LOW-level input voltage
HIGH-level output voltage
LOW-level output voltage
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.1
-
-
V
IO = −1.1 mA; VCC = 1.1 V
0.7 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
1.03
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.30
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.97
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.85
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.67
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.55
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.1
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.3 × VCC
V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.37
V
VI = VIH or VIL
IO = 1.9 mA; VCC = 1.65 V
-
-
0.35
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.33
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.45
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.33
V
-
-
0.45
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
IO = 4.0 mA; VCC = 3.0 V
-
-
±0.5
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.5
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.6
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
0.9
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
50
µA
74AUP2G00_1
Product data sheet
[1]
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
6 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
Table 7.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min
VCC = 0.8 V
Typ
Max
Unit
0.75 × VCC -
-
V
VCC = 0.9 V to 1.95 V
0.70 × VCC -
-
V
VCC = 2.3 V to 2.7 V
1.6
-
-
V
VCC = 3.0 V to 3.6 V
2.0
-
-
V
VCC = 0.8 V
-
-
0.25 × VCC V
VCC = 0.9 V to 1.95 V
-
-
0.30 × VCC V
VCC = 2.3 V to 2.7 V
-
-
0.7
V
VCC = 3.0 V to 3.6 V
-
-
0.9
V
Tamb = −40 °C to +125 °C
HIGH-level input voltage
VIH
LOW-level input voltage
VIL
VOH
HIGH-level output voltage
LOW-level output voltage
VOL
VI = VIH or VIL
IO = −20 µA; VCC = 0.8 V to 3.6 V
VCC − 0.11 -
-
V
IO = −1.1 mA; VCC = 1.1 V
0.6 × VCC
-
-
V
IO = −1.7 mA; VCC = 1.4 V
0.93
-
-
V
IO = −1.9 mA; VCC = 1.65 V
1.17
-
-
V
IO = −2.3 mA; VCC = 2.3 V
1.77
-
-
V
IO = −3.1 mA; VCC = 2.3 V
1.67
-
-
V
IO = −2.7 mA; VCC = 3.0 V
2.40
-
-
V
IO = −4.0 mA; VCC = 3.0 V
2.30
-
-
V
IO = 20 µA; VCC = 0.8 V to 3.6 V
-
-
0.11
V
IO = 1.1 mA; VCC = 1.1 V
-
-
0.33 × VCC V
IO = 1.7 mA; VCC = 1.4 V
-
-
0.41
VI = VIH or VIL
V
IO = 1.9 mA; VCC = 1.65 V
-
-
0.39
V
IO = 2.3 mA; VCC = 2.3 V
-
-
0.36
V
IO = 3.1 mA; VCC = 2.3 V
-
-
0.50
V
IO = 2.7 mA; VCC = 3.0 V
-
-
0.36
V
-
-
0.50
V
II
input leakage current
VI = GND to 3.6 V; VCC = 0 V to 3.6 V
IO = 4.0 mA; VCC = 3.0 V
-
-
±0.75
µA
IOFF
power-off leakage current
VI or VO = 0 V to 3.6 V; VCC = 0 V
-
-
±0.75
µA
∆IOFF
additional power-off
leakage current
VI or VO = 0 V to 3.6 V;
VCC = 0 V to 0.2 V
-
-
±0.75
µA
ICC
supply current
VI = GND or VCC; IO = 0 A;
VCC = 0.8 V to 3.6 V
-
-
1.4
µA
∆ICC
additional supply current
VI = VCC − 0.6 V; IO = 0 A;
VCC = 3.3 V
-
-
75
µA
[1]
[1]
One input at VCC − 0.6 V, other input at VCC or GND.
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
7 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
-
17.5
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
2.5
5.3
11.0
2.1
12.2
13.5
ns
VCC = 1.4 V to 1.6 V
2.0
3.8
6.8
1.8
7.8
8.6
ns
VCC = 1.65 V to 1.95 V
1.6
3.1
5.3
1.4
6.2
6.9
ns
VCC = 2.3 V to 2.7 V
1.3
2.5
4.0
1.1
4.7
5.2
ns
VCC = 3.0 V to 3.6 V
1.0
2.2
3.6
1.0
4.2
4.7
ns
-
21.0
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
2.4
6.1
13.0
2.2
14.4
15.9
ns
VCC = 1.4 V to 1.6 V
2.4
4.4
7.9
2.2
9.2
10.2
ns
VCC = 1.65 V to 1.95 V
2.0
3.7
6.2
1.9
7.3
8.1
ns
VCC = 2.3 V to 2.7 V
1.4
3.0
4.7
1.3
5.6
6.2
ns
VCC = 3.0 V to 3.6 V
1.3
2.8
4.3
1.2
4.9
5.4
ns
-
24.5
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
3.4
6.9
14.8
3.1
16.5
18.2
ns
VCC = 1.4 V to 1.6 V
2.8
5.0
8.9
2.5
10.5
11.6
ns
VCC = 1.65 V to 1.95 V
2.0
4.1
7.0
2.0
8.3
9.2
ns
VCC = 2.3 V to 2.7 V
1.7
3.5
5.3
1.5
6.4
7.1
ns
VCC = 3.0 V to 3.6 V
1.6
3.2
4.9
1.4
5.7
6.3
ns
-
34.8
-
-
-
-
ns
VCC = 1.1 V to 1.3 V
4.6
9.2
20.1
4.1
22.6
24.9
ns
VCC = 1.4 V to 1.6 V
3.0
6.5
11.8
2.9
14.0
15.4
ns
VCC = 1.65 V to 1.95 V
2.6
5.4
9.3
2.3
11.1
12.3
ns
VCC = 2.3 V to 2.7 V
2.4
4.6
7.1
2.1
8.5
9.4
ns
VCC = 3.0 V to 3.6 V
2.3
4.3
6.5
2.1
7.6
8.4
ns
CL = 5 pF
tpd
propagation delay nA, nB to nY; see Figure 7
[2]
VCC = 0.8 V
CL = 10 pF
tpd
propagation delay nA, nB to nY; see Figure 7
[2]
VCC = 0.8 V
CL = 15 pF
tpd
propagation delay nA, nB to nY; see Figure 7
[2]
VCC = 0.8 V
CL = 30 pF
tpd
propagation delay nA, nB to nY; see Figure 7
VCC = 0.8 V
[2]
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
8 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8.
Symbol Parameter
25 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[1]
Max
Min
Max
(85 °C)
Max
(125 °C)
VCC = 0.8 V
-
2.8
-
-
-
-
pF
VCC = 1.1 V to 1.3 V
-
2.9
-
-
-
-
pF
VCC = 1.4 V to 1.6 V
-
3.0
-
-
-
-
pF
VCC = 1.65 V to 1.95 V
-
3.0
-
-
-
-
pF
VCC = 2.3 V to 2.7 V
-
3.4
-
-
-
-
pF
VCC = 3.0 V to 3.6 V
-
3.9
-
-
-
-
pF
CL = 5 pF, 10 pF, 15 pF and 30 pF
power dissipation
capacitance
CPD
[3]
fi = 1 MHz;
VI = GND to VCC
[1]
All typical values are measured at nominal VCC.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
Σ(CL × VCC2 × fo) = sum of the outputs.
12. Waveforms
nA, nB input
VM
tPHL
tPLH
VM
nY output
mna213
Measurement points are given in Table 9.
Logic levels: VOL and VOH are typical output voltage drop that occur with the output load.
Fig 7. The data input (nA or nB) to output (nY) propagation delays
Table 9.
Measurement points
Supply voltage
Output
Input
VCC
VM
VM
VI
tr = tf
0.8 V to 3.6 V
0.5 × VCC
0.5 × VCC
VCC
≤ 3.0 ns
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
9 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
VCC
VEXT
5 kΩ
PULSE
GENERATOR
VI
VO
DUT
RT
CL
RL
001aac521
Test data is given in Table 10.
Definitions for test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
VEXT = External voltage for measuring switching times.
Fig 8. Load circuitry for switching times
Table 10.
Test data
Supply voltage
Load
VEXT
RL[1]
VCC
CL
0.8 V to 3.6 V
5 pF, 10 pF, 15 pF and 30 pF 5 kΩ or 1 MΩ
[1]
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
open
GND
2 × VCC
For measuring enable and disable times RL = 5 kΩ, for measuring propagation delays, setup and hold times and pulse width RL = 1 MΩ.
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
10 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
13. Package outline
VSSOP8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm
D
E
SOT765-1
A
X
c
y
HE
v M A
Z
5
8
Q
A
A2
A1
pin 1 index
(A3)
θ
Lp
1
4
e
L
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(2)
e
HE
L
Lp
Q
v
w
y
Z(1)
θ
mm
1
0.15
0.00
0.85
0.60
0.12
0.27
0.17
0.23
0.08
2.1
1.9
2.4
2.2
0.5
3.2
3.0
0.4
0.40
0.15
0.21
0.19
0.2
0.13
0.1
0.4
0.1
8°
0°
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT765-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-06-07
MO-187
Fig 9. Package outline SOT765-1 (VSSOP8)
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
11 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm
1
2
SOT833-1
b
4
3
4×
(2)
L
L1
e
8
7
6
e1
5
e1
e1
8×
A
(2)
A1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A (1)
max
A1
max
b
D
E
e
e1
L
L1
mm
0.5
0.04
0.25
0.17
2.0
1.9
1.05
0.95
0.6
0.5
0.35
0.27
0.40
0.32
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT833-1
---
MO-252
---
EUROPEAN
PROJECTION
ISSUE DATE
04-07-22
04-11-09
Fig 10. Package outline SOT833-1 (XSON8)
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
12 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
XQFN8: plastic extremely thin quad flat package; no leads; 8 terminals; body 1.6 x 1.6 x 0.5 mm
B
D
SOT902-1
A
terminal 1
index area
E
A
A1
detail X
L1
e
e
C
∅v M C A B
∅w M C
L
4
y1 C
y
5
3
metal area
not for soldering
e1
b
2
6
e1
7
1
terminal 1
index area
8
X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max
A1
b
D
E
e
e1
L
L1
v
w
y
y1
mm
0.5
0.05
0.00
0.25
0.15
1.65
1.55
1.65
1.55
0.55
0.5
0.35
0.25
0.15
0.05
0.1
0.05
0.05
0.05
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
JEITA
SOT902-1
---
MO-255
---
EUROPEAN
PROJECTION
ISSUE DATE
05-11-16
05-11-25
Fig 11. Package outline SOT902-1 (XQFN8)
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
13 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
14. Abbreviations
Table 11.
Abbreviations
Acronym
Description
CDM
Charged Device Model
CMOS
Complementary Metal Oxide Semiconductor
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
15. Revision history
Table 12.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74AUP2G00_1
20060825
Product data sheet
-
-
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
14 of 16
74AUP2G00
Philips Semiconductors
Low-power dual 2-input NAND gate
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.semiconductors.philips.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Philips Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Philips Semiconductors
sales office. In case of any inconsistency or conflict with the short data sheet,
the full data sheet shall prevail.
16.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, Philips Semiconductors does not give any representations
or warranties, expressed or implied, as to the accuracy or completeness of
such information and shall have no liability for the consequences of use of
such information.
Right to make changes — Philips Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Philips Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a Philips Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Philips Semiconductors accepts no liability for inclusion and/or use
of Philips Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Philips Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — Philips Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.semiconductors.philips.com/profile/terms, including those
pertaining to warranty, intellectual property rights infringement and limitation
of liability, unless explicitly otherwise agreed to in writing by Philips
Semiconductors. In case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
74AUP2G00_1
Product data sheet
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Rev. 01 — 25 August 2006
15 of 16
Philips Semiconductors
74AUP2G00
Low-power dual 2-input NAND gate
18. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
14
15
16
16.1
16.2
16.3
16.4
17
18
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 8
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Koninklijke Philips Electronics N.V. 2006.
All rights reserved.
For more information, please visit: http://www.semiconductors.philips.com.
For sales office addresses, email to: [email protected].
Date of release: 25 August 2006
Document identifier: 74AUP2G00_1