IRF IRF7404QPBF

PD - 96127
IRF7404QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -20V
RDS(on) = 0.040Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-7.7
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
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Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
50
°C/W
1
08/29/07
IRF7404QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
-20
–––
–––
–––
-0.70
6.8
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, ID = -250µA
-0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.040
V GS = -4.5V, ID = -3.2A ƒ
Ω
––– 0.060
V GS = -2.7V, ID = -2.7A ƒ
––– –––
V
V DS = VGS, ID = -250µA
––– –––
S
V DS = -15V, ID = -3.2A
––– -1.0
V DS = -16V, VGS = 0V
µA
––– -25
V DS = -16V, VGS = 0V, TJ = 125°C
––– -100
V GS = -12V
nA
––– 100
V GS = 12V
––– 50
I D = -3.2A
––– 5.5
nC V DS = -16V
––– 21
V GS = -4.5V, See Fig. 6 and 12 ƒ
14 –––
V DD = -10V
32 –––
I D = -3.2A
ns
100 –––
R G = 6.0Ω
65 –––
R D = 3.1Ω, See Fig. 10 ƒ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
2.5
–––
LS
Internal Source Inductance
–––
4.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1500 –––
––– 730 –––
––– 340 –––
IGSS
D
nH
Between lead tip
and center of die contact
pF
V GS = 0V
V DS = -15V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
-3.1
–––
–––
-27
–––
–––
–––
–––
69
71
-1.0
100
110
A
V
ns
µC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -2.0A, VGS = 0V ƒ
TJ = 25°C, I F = -3.2A
di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS,
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
2
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IRF7404QPbF
1000
1000
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
-1.5V
1
20µs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
TOP
0.1
1
10
100
10
-1.5V
1
20µs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20µs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
100
Fig 2. Typical Output Characteristics
100
1.5
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
1
5.0
A
I D = -5.3A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7404QPbF
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
Ciss
2000
Coss
1000
Crss
0
1
10
100
I D = -3.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
10
20
30
40
50
60
A
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I SD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
TJ = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.6
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7404QPbF
8.0
V DS
D.U.T.
V GS
-ID , Drain Current (A)
RD
RG
6.0
A
V
+ DD
-4.5V
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7404QPbF
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
-4.5 V
QGS
VGS
VG
-3mA
Charge
Fig 12a. Basic Gate Charge Waveform
6
D.U.T.
QGD
+VDS
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
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IRF7404QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
+
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
[
] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[
ISD
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7404QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7404QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2007
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9