IRF IRF7303

PD - 9.1239D
IRF7303
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
Description
l
l
S1
G1
S2
G2
1
8
2
7
3
6
4
5
D1
VDSS = 30V
D1
D2
D2
RDS(on) = 0.050Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Max.
Units
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
8/25/97
IRF7303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆T J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
30
–––
–––
–––
1.0
5.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V GS = 0V, I D = 250µA
0.032 ––– V/°C Reference to 25°C, I D = 1mA
––– 0.050
VGS = 10V, I D = 2.4A ƒ
Ω
––– 0.080
VGS = 4.5V, ID = 2.0A ƒ
––– –––
V
VDS = VGS , ID = 250µA
––– –––
S
V DS = 15V, ID = 2.4A
––– 1.0
VDS = 24V, VGS = 0V
µA
––– 25
VDS = 24V, VGS = 0V, TJ = 125 °C
––– 100
VGS = 20V
nA
––– -100
VGS = - 20V
––– 25
I D = 2.4A
––– 2.9
nC VDS = 24V
––– 7.9
VGS = 10V, See Fig. 6 and 12 ƒ
6.8 –––
VDD = 15V
21 –––
I D = 2.4A
ns
22 –––
R G = 6.0Ω
7.7 –––
RD = 6.2Ω, See Fig. 10 ƒ
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
–––
4.0
–––
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
520
180
72
–––
–––
–––
IGSS
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
ISM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 2.5
showing the
A
G
integral reverse
––– ––– 20
p-n junction diode.
S
––– ––– 1.0
V
TJ = 25°C, IS = 1.8A, VGS = 0V ƒ
––– 47
71
ns
TJ = 25°C, IF = 2.4A
––– 56
84
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ I SD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS ,
TJ ≤ 150°C
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Surface mounted on FR-4 board, t ≤ 10sec.
IRF7303
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rc e C u rre n t (A )
D
TOP
100
4.5 V
10
20 µs P UL SE W ID TH
TJ = 25°C
1
0.1
1
10
A
100
4.5 V
10
2 0µ s PU L SE W ID TH
T J = 1 50 °C
1
100
0.1
1
V D S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
100
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
(N o rm a li ze d )
I D , D rain -to- S ou rce C ur rent (A )
2.0
TJ = 2 5° C
TJ = 15 0 °C
V DS = 1 5 V
2 0 µ s PU L SE W ID T H
4
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
10
10
10
A
I D = 4 .0A
1.5
1.0
0.5
V G S = 10 V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T J , Junction Temperature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF7303
V GS
C is s
C rs s
C os s
C , C a p a c ita n c e (p F )
800
=
=
=
=
20
0 V,
f = 1 MH z
C g s + C gd , C ds S HO R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
1000
I D = 2 .4A
VDS = 2 4V
16
C is s
600
12
C os s
400
200
C rs s
0
10
4
FO R TES T C IR CU IT
SEE FIG U R E 12
0
A
1
8
100
0
5
V D S , D rain-to-S ource Voltage (V )
15
20
A
25
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
I S D , R e v e rse D ra in C u rre n t (A )
10
10
TJ = 150 °C
TJ = 25 °C
1
VG S = 0 V
0.1
0.0
0.5
1.0
1.5
2.0
V S D , Source-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.5
100us
10
1ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
V DS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRF7303
5.0
VDS
VGS
I D , Drain Current (A)
4.0
RD
D.U.T.
RG
+
- VDD
3.0
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
T C , Case Temperature
125
150
( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
0.20
10
Thermal Response
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
IRF7303
Current Regulator
Same Type as D.U.T.
QG
50KΩ
.2µF
12V
.3µF
10V
QGS
QGD
VG
D.U.T.
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
Fig 12b. Gate Charge Test Circuit
IRF7303
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
ISD
*
IRF7303
Package Outline
SO8 Outline
INCHES
DIM
D
-B-
5
8
7
1
2
6
5
3
0.25 (.010)
4
e
6X
M
A M
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
A
0.10 (.004)
L
8X
A1
B 8X
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
e1
θ
-C-
D
e
K x 45°
e1
0.25 (.010)
MAX
5
H
E
-A-
6
C
8X
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
K
.011
.019
0.28
0.48
L
0.16
.050
0.41
1.27
0°
8°
θ
M C A S B S
0°
8°
6.20
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
6
MILLIMETERS
MIN
0.72 (.028 )
8X
6.46 ( .255 )
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
E X A M P LE : TH IS IS A N IR F 7 101
3 12
IN T E R N A TI ON A L
R E C T IF IE R
LO G O
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
XX X X
F 7 101
T OP
PART NUMBER
W AFER
LO T C O D E
(LA S T 4 D IG IT S )
B O T TO M
IRF7303
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
T ER M IN A L N U M B E R 1
12 .3 ( .48 4 )
11 .7 ( .46 1 )
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E ED D IR E C T IO N
N O TE S:
1 . CO N TRO LL IN G D IM E N SIO N : M ILLIM E TE R.
2 . A LL DIM E NS IO NS A R E S HO W N IN M ILL IM E TER S (INC HE S ).
3 . O UTL IN E C O NFO RM S TO E IA - 48 1 & E IA -5 41 .
33 0. 00
(12 .99 2)
M A X.
1 4. 40 ( .5 66 )
1 2. 40 ( .4 88 )
N O T ES :
1. C O N T R O LL IN G D IM E N S IO N : M IL LIM E T ER .
2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1.
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Data and specifications subject to change without notice.
8/97