PIP3224-DC Dual channel high-side TOPFET™ Rev. 01 — 20 February 2004 Product data 1. Product profile 1.1 Description Monolithic temperature and overload protected dual high-side power switch based on TOPFET™ Trench technology in a 7-pin surface mount plastic package. 1.2 Features ■ ■ ■ ■ ■ ■ ■ ■ Very low quiescent current Power TrenchMOS™ Overtemperature protection Over and undervoltage protection Reverse battery protection Low charge pump noise Loss of ground protection Negative load clamping ■ ■ ■ ■ ■ ■ ■ ■ CMOS logic compatibility Current limitation Latched overload protection ESD protection for all pins Diagnostic status indication Off-state open load detection Load dump protection Internal ground resistor. 1.3 Applications ■ 12 and 24 V grounded loads ■ Inductive loads ■ High inrush current loads ■ Replacement for relays and fuses. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Min Max Units RBLon battery-load on-state resistance - 90 mΩ IL load current - 4 A IL(nom) nominal load current (ISO) 3.6 - A IL(lim) self-limiting load current 8 16 A VBG(oper) battery-ground operating voltage 5.5 35 V PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 2. Pinning information B S mb I1 L1 P I2 1 2 3 4 5 6 7 L2 Front view G MBK128 No connection can be made to pin 4 (cropped). Fig 1. Pinning; SOT427 03pa68 P represents protection circuitry. (D2-PAK). Fig 2. Symbol; (Dual High-Side Switch) TOPFETTM. 2.1 Pin description Table 2: Pin description Symbol Pin I/O Description L1 1 O load 1 G 2 - circuit common ground I1 3 I input 1 [1] [2] battery B 4 - S 5 O status I2 6 I input 2 L2 7 O [1] [2] mb - load 2 [2] mounting base Pin 4 is cropped and cannot be connected to the PCB by surface mounting. The battery is connected to the mounting base. 3. Ordering information Table 3: Ordering information Type number PIP3224-DC Package Name Description D2-PAK Plastic single-ended surface mounted package (Philips version of D2-PAK); SOT427 7 leads (one lead cropped) Version © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 2 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 4. Block diagram 4/mb B CHANNEL1 VOLTAGE REGULATOR POWER MOSFET1 CHARGE PUMP CURRENT LIMIT 3 I1 CONTROL LOGIC1 1 OPEN CIRCUIT SENSOR L1 OVERVOLTAGE PROTECTION UNDERVOLTAGE PROTECTION SHORT CIRCUIT PROTECTION TEMPERATURE SENSOR 5 STATUS DIAGNOSIS S CHANNEL2 VOLTAGE REGULATOR POWER MOSFET2 CHARGE PUMP CURRENT LIMIT I2 6 CONTROL LOGIC2 7 OPEN CIRCUIT SENSOR L2 OVERVOLTAGE PROTECTION UNDERVOLTAGE PROTECTION SHORT CIRCUIT PROTECTION RLG1 RLG2 TEMPERATURE SENSOR RG G 2 03ap07 Fig 3. Elements of the dual high-side TOPFET switch. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 3 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 5. Functional description A diagnostic status ensures faster fault detection. Active current limit is combined with latched short circuit protection in order to protect the device in the event of a short circuit. Thermal shutdown for high temperature conditions has an automatic restart at a lower temperature so providing protection against excessive power dissipation. Active clamping protects the device against low energy spikes. Undervoltage lockout means the device shuts down for low battery voltages, thus avoiding faulty operation. Overvoltage shutdown in the on-state protects a load such as a lamp filament from potentially destructive voltage spikes. Table 4: Truth table Abbreviations: L = logic LOW; H = logic HIGH; X = don’t care; 0 = condition not present; 1 = condition present; UV = undervoltage; OV = overvoltage; OC = open circuit load; SC = short circuit; OT = overtemperature [1]. Input [1] Supply 1 2 UV OV L L 0 L L 0 L H H Load 1 Load 2 OT OC SC Load output OT 1 Status Operating mode OC SC 2 X 0 X X 0 X X OFF OFF H both off & normal X 1 X X X X X OFF OFF L both off, one/both OC or shorted to VS or battery; Figure 10 0 X 1 X X 0 0 0 OFF ON L one off & OC, with other on & normal L 0 0 0 0 0 0 0 0 ON OFF H one on & normal, with other off & normal H H 0 0 0 0 0 0 0 0 ON ON H both on & normal H X 1 0 X X X 0 X X OFF OFF H supply undervoltage lockout H X 0 1 X 0 0 X 0 0 OFF OFF H supply overvoltage shutdown H X 0 0 0 1 X X X X OFF X L one SC tripped H L 0 0 0 1 X 0 0 X OFF OFF L one SC tripped, with other off & normal H H 0 0 0 1 X 0 0 0 OFF ON L one SC tripped, with other on & normal H X 0 0 0 0 1 X X X OFF X L one OT shutdown H L 0 0 0 0 1 0 0 X OFF OFF L one OT shutdown, with other off & normal H H 0 0 0 0 1 0 0 0 OFF ON L one OT shutdown, with other on & normal The status will continue to indicate OT (even if the input goes LOW) until the device cools below the reset threshold temperature. See “Overtemperature protection” characteristics in Table 7 “Static characteristics”. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 4 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 6. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions [1] VBG battery-ground supply voltage IL load current Tmb ≤ 130 °C Tmb ≤ 25 °C Min Max Unit - 45 V - 4 A Ptot total power dissipation - 44.6 W Tstg storage temperature −55 +175 °C Tj junction temperature −40 +150 °C Tmb mounting base temperature - 260 °C - 16 V - 32 V −5 +5 mA −50 +50 mA during soldering (≤ 10 s) Reverse battery voltage VBGR reverse battery-ground supply voltage VBGRR repetitive reverse battery-ground supply voltage RI ≥ 3.3 kΩ; RSS ≥ 3.3 kΩ; Figure 10 [2] Input current II input current IIRM repetitive peak input current δ ≤ 0.1; tp = 300 µs Status current IS status current ISRM repetitive peak status current −5 +5 mA δ ≤ 0.1; tp = 300 µs −50 +50 mA Tj = 150 °C prior to turn-off; VBG = 13 V; IL = 5 A; (one channel) Figure 13 - 60 mJ Human Body Model 1; C = 100 pF; R = 1.5 kΩ - 2 kV Inductive load clamping non-repetitive battery-load clamping energy EBL(CL)S Electrostatic discharge voltage Vesd [1] [2] electrostatic discharge voltage The device will not be harmed by exposure to the maximum supply voltage, but normal operation is not possible because of overvoltage shutdown - see Table 7 “Static characteristics” for the operating range. Reverse battery voltage is only allowed with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. See Figure 10 “Typical dynamic response circuit diagram including reverse supply protection and open load detection.” 7. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base per channel - 4 5.6 K/W both channels - 2 2.8 K/W thermal resistance from junction to ambient mounted on printed circuit board; minimum footprint - 50 - K/W Rth(j-a) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 5 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 8. Static characteristics Table 7: Static characteristics Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IG = 1 mA 45 55 65 V 50 55 65 V −18 −23 −28 V −20 −25 −30 V 5.5 - 35 V Tmb = 150 °C - - 20 µA Tmb = 25 °C - 0.1 1 µA Tmb = 150 °C - - 10 µA Tmb = 25 °C - 0.1 1 µA one channel on; Figure 5 - 2 3 mA both channels on - 4 6 mA 3.6 - - A Tmb = 25 °C - 73 90 mΩ Tmb = 150 °C - 146 180 mΩ Clamping voltage VBG(CL) battery-ground clamping voltage VBL(CL) battery-load clamping voltage IL = IG = 1 mA VLG(CL) load-ground clamping voltage IL = 10 mA; Figure 13 [1] IL = 4 A; tp = 300 µs Supply voltage VBG(oper) battery-ground operating voltage Current [2] IB battery quiescent current off-state load current IL(off) operating current IG(on) IL(nom) VLG = VIG = 0 V; Figure 9 [3] VBL = VBG; per channel nominal load current (ISO) VBL = 0.5 V; Tmb = 85 °C [4] battery-load on-state resistance 9 ≤ VBG ≤ 35 V; IL = 4 A; Figure 4 [5] Resistance RBLon VBG = 5.5 V; IL = 4 A ground resistor RG Input Tmb = 25 °C - 76 120 mΩ Tmb = 150 °C - 150 240 mΩ 40 75 100 Ω IG = −200 mA; tp = 300 µs [6] [7] II input current VIG = 5 V 20 60 160 µA VIG(CL) input-ground clamping voltage II = 200 µA 5.5 7 8.5 V VIG(on) input-ground turn-on voltage Figure 8 - 2.1 3 V VIG(off) input-ground turn-off voltage 1.2 1.8 - V VIG(on)(hys) input-ground turn-on hysteresis 0.15 0.3 0.5 V II(on) input turn-on current VIG = 3 V - - 100 µA II(off) input turn-off current VIG = 1.2 V 12 - - µA Open current detection [8][9] VLG(oc) load-ground open circuit voltage VBG ≥ 9 V 1.5 2.5 3.5 V IG(oc) open-circuit operating current VBG = VLG = 16 V - 0.8 1.5 mA open load detected; other channel is off © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 6 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ Table 7: Static characteristics…continued Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit IL(oc) load open circuit current VLG = 3.5 V; per channel - −22 −40 µA VLG = 16 V; per channel - −200 −300 µA VS = 5 V; connected externally; per channel; Figure 10 - 10 - kΩ 2 4.2 5.3 V - 0.5 1.5 V 35 40 45 V 0.2 1 2 V VBG = 45 V; per channel - 1 2.5 mA VBG ≥ 8 V; VBL = VBG; Figure 7 8 12 16 A 150 170 190 °C 3 10 20 °C 5.5 7 8.5 V RL(oc) open circuit load resistor Undervoltage [9] VBG(uv) [11] battery-ground undervoltage VBG(uv)(hys) battery-ground undervoltage hysteresis Overvoltage [9] VBG(ov) [12] battery-ground overvoltage VBG(ov)(hys) battery-ground overvoltage hysteresis IG(ov) overvoltage operating current Overload protection IL(lim) self-limiting load current Overtemperature protection [9][10] Tj(th) threshold junction temperature Tj(th)(hys) threshold junction temperature hysteresis [13] Status [9] VSG(CL) status-ground clamping voltage VSG(L) status-ground low voltage IS(off) status leakage current IS = 100 µA IS = 100 µA; Figure 6 - 0.7 0.9 V IS = 250 µA - - 1.1 V - - 10 µA - 0.1 1 µA - 47 - kΩ VSG = 5 V Tmb = 150 °C Tmb = 25 °C status resistor RS [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] VSG = 5 V; connected externally; Figure 10 [14] For a high-side switch, the load pin voltage goes negative with respect to the ground during the turn-off of an inductive load. This negative voltage is clamped by the device. 9 V ≤ VBG ≤ 35 V This is the current drawn from the supply when both inputs are LOW, and includes leakage current to the loads. Defined as in ISO10483-1. For comparison purposes only. This only applies to the RBLon per channel. The supply and input voltages for the RBLon tests are continuous. The specified pulse duration is tp = 300 µs, and refers only to the applied load current. RG is a resistor incorporated internally into the package. 5.5 V ≤ VBG ≤ 35 V An open circuit load can be detected in the off-state and requires an external pull-up resistor, RL(oc). See Table 4 “Truth table” Overtemperature protection is not active during reverse current operation. Undervoltage sensor causes each output channel to switch off and reset. Overvoltage sensor causes each output channel to switch off to protect the load. After cooling below the reset temperature the channel will resume normal operation. The status output is an open drain transistor and requires an external pull-up resistor, RS, to indicate a logic HIGH. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 7 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 03pa96 200 RBLon (mΩ) 160 Tj = 150°C 120 Tj = 25°C 80 Tj = -40°C 40 0 0 10 20 30 VBG (V) 40 IL = 4 A; VIG = 5 V Fig 4. Battery-load on-state resistance as a function of battery-ground voltage; typical values. 03pa95 4 IG (mA) 3 overvoltage shutdown undervoltage shutdown clamping Tj = −40 °C Tj = 25 °C 2 Tj = 150 °C 1 0 0 25 50 75 VBG (V) VIG = 5 V Fig 5. Supply current characteristics: operating current as a function of battery-ground voltage for one channel only; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 8 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 03pa94 5 IS (mA) 4 03pa93 16 IL(lim) (A) 12 3 8 2 4 1 0 0 0 1 2 3 0 VSG (V) 8 12 16 VBL (V) VBG = 13 V; VIG = 5 V; Tj = 25 °C VBG = 16 V; VIG = 5 V; Tmb = 25 °C Fig 6. Status current as a function of status-ground voltage; typical values. 03pa98 3.5 4 VIG(th) Fig 7. Self-limiting load current as a function of battery-load voltage; typical values. 03pa97 6 IB (µ A) (V) 3 max 4 2.5 2 VIG(on) 2 VIG(off) 1.5 min 0 1 -50 0 50 100 150 200 Tj (°C) 5.5 V ≤ VBG ≤ 35 V -50 50 100 150 200 Tj (°C) VBG = 35 V Fig 8. Input-ground threshold voltage as a function of junction temperature. Fig 9. Battery quiescent current as a function of junction temperature; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data 0 Rev. 01 — 20 February 2004 9 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 9. Dynamic characteristics Table 8: Switching characteristics Tmb = 25 °C; VBG = 13 V; resistive load RL = 13 Ω per channel; Figure 12. Symbol Parameter Conditions Min Typ Max Unit 30 - µs Turn-on measured from the input going HIGH td(on) turn-on delay time to 10 % VL - dV/dton rising slew rate 30 to 70 % VL 0.5 1 2 V/µs ton turn-on switching time to 90 % VL - 60 220 µs to 90 % VL - 20 - µs Turn-off measured from the input going LOW td(off) turn-off delay time dV/dtoff falling slew rate 70 to 30 % VL 0.5 1 2 V/µs toff turn-off switching time to 10 % VL - 40 200 µs Table 9: Capacitances Tmb = 25 °C; f = 1 MHz; VIG = 0 V. Symbol Parameter Conditions Min Typ Max Unit Csg status-ground capacitance VSG = 5 V - 11 15 pF Per channel Cig input-ground capacitance VBG = 13 V - 15 20 pF Cbl battery-load capacitance VBL = 13 V - 130 180 pF Table 10: Short circuit load protection characteristics Tmb ≤ 125 °C prior to the overload short circuit condition. Symbol Parameter PBL(OV)(th) battery-load overload power threshold tBL(d)(sc) [1] [2] Conditions 5.5 ≤ VBG ≤ 35 V; device trips if P BL > PBL(OV)(th); Figure 11 battery-load short-circuit characteristic time Min Typ Max Unit [1] 10 55 100 W [2] 200 350 800 µs Short circuit protection is latched, but at high temperatures where Tj > Tj(th) overtemperature protection may occur first. Normal operation may only be resumed following a short circuit after the input is toggled LOW then HIGH again. Short circuit response time td(sc) varies with battery-load power PBL according to the logarithmic model equation: t BL(d)(sc) t d(sc) ≈ ------------------------------------P BL ln -------------------------- P BL(OV)(th) Table 11: Status response times Limits are valid for −40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - 65 100 µs Measured from when the input goes LOW to when the status goes LOW td(oc) open-circuit response time Figure 10 and 14 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 10 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ IB RS RSS IS RI VBG RL(oc) VSG VS IL P II VL VIG RL IG 03pa90 RI ≥ 3.3 kΩ; RS = 47 kΩ; RSS ≥ 3.3 kΩ and RL(oc) = 10 kΩ. Fig 10. Typical dynamic response circuit diagram including reverse supply protection and open load detection. ton td(sc) toff 90% VL IL dV/dton dV/dtoff 10% 0V 0A 5V 5V VSG VSG 0.7 V 0V 0V 5V 5V VIG VIG 0 03pb03 0 03pa51 VBG = 13 V; VIG = 5 V and Tj = 25 °C Fig 11. Short circuit protection waveforms. Fig 12. Resistive switching waveforms and definitions. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 11 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ VL 0V ton EBL(CL)S toff 90% IL VL 0A 0V 5V 5V VSG 10% td(oc) VSG 0.7 V 0V 0V 5V 5V VIG VIG 0 03pa99 0 03pb00 Fig 13. Switching a large inductive load. Fig 14. Open circuit detect waveforms. 10. Package information for SOT427 Epoxy meets requirements of UL 94 V-0 at 1/8 inch thickness. Net mass: 1.5 g. For soldering guidelines and surface mount footprint design, please visit http://www.semiconductors.philips.com/package/ © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 12 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 11. Package outline Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped) SOT427 A A1 E D1 mounting base D HD 4 1 Lp 7 b e e e e e c e Q 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b c D max. D1 E e Lp HD Q mm 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 11 1.60 1.20 10.30 9.70 1.27 2.90 2.10 15.80 14.80 2.60 2.20 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-25 01-04-18 SOT427 Fig 15. SOT427 (D2-PAK). © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 13 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 12. Revision history Table 12: Revision history Rev Date 01 20040220 CPCN Description - Product data (9397 750 12362) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Product data Rev. 01 — 20 February 2004 14 of 16 PIP3224-DC Philips Semiconductors Dual channel high-side TOPFET™ 13. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 16. Trademarks 15. Disclaimers TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 9397 750 12362 Rev. 01 — 20 February 2004 15 of 16 Philips Semiconductors PIP3224-DC Dual channel high-side TOPFET™ Contents 1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Package information for SOT427 . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2004. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 20 February 2004 Document order number: 9397 750 12362