DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 BAS221 General purpose diode Product specification Supersedes data of 1999 Apr 26 1999 May 07 Philips Semiconductors Product specification General purpose diode BAS221 FEATURES DESCRIPTION • Small ceramic SMD package The BAS221 is a general purpose diode fabricated in planar technology, and encapsulated in the ceramic SOD110 package. • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 200 V • Repetitive peak reverse voltage: max. 250 V cathode mark handbook, 4 columns a k k a • Repetitive peak forward current: max. 1 A. bottom view side view top view MAM139 APPLICATIONS • General purpose switching in e.g. surface mounted circuits. Marking code: JS. Fig.1 Simplified outline (SOD110) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − 250 V − 200 V − 300 mA − 1 A t = 1 µs − 20 A t = 100 µs − 7 A t = 10 ms − 2 A VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current note 1; see Fig.2 IFRM repetitive peak forward current tp < 0.5 ms; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 Ptot total power dissipation − 400 mW Tstg storage temperature Tamb = 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Note 1. Device mounted on an FR4 printed-circuit board. 1999 May 07 2 Philips Semiconductors Product specification General purpose diode BAS221 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-tp thermal resistance from junction to tie-point Rth j-a thermal resistance from junction to ambient VALUE UNIT 200 K/W 315 K/W MAX. UNIT note 1 Note 1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current CONDITIONS see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V IF = 300 mA 1.4 V VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA see Fig.5 Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.7 50 ns 1999 May 07 3 Philips Semiconductors Product specification General purpose diode BAS221 GRAPHICAL DATA 400 MBG384 600 MDA986 handbook, halfpage handbook, halfpage IF (mA) IF (mA) (1) 300 (2) (3) 400 200 200 100 0 0 0 50 100 150 200 Tamb (°C) 1 2 VF (V) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board. Fig.2 0 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MDA987 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 07 4 104 Philips Semiconductors Product specification General purpose diode BAS221 MBG381 2 10halfpage handbook, Cd (pF) IR (µA) 0.8 10 (1) 1 (2) 0.6 1 10 MBG447 1.0 handbook, halfpage 0.4 10 2 0.2 100 0 Tj (oC) 0 200 2 (1) VR = VRmax; maximum values. (2) VR = VRmax; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. handbook, full pagewidth tr 4 6 VR (V) 8 Diode capacitance as a function of reverse voltage; typical values. tp t D.U.T. RS = 50 Ω V = VR I F x R S IF 10% IF SAMPLING OSCILLOSCOPE t R i = 50 Ω MGA881 (1) 90% VR input signal (1) IR = 3 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05. Oscilloscope: rise time tr = 0.35 ns. Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance). Fig.7 Reverse recovery time and waveforms. 1999 May 07 t rr 5 output signal Philips Semiconductors Product specification General purpose diode BAS221 PACKAGE OUTLINE D E A y cathode identifier DIMENSIONS (mm are the original dimensions) 1 2 0 0.5 1 mm UNIT A max. D E y mm 1.6 2.10 1.90 1.40 1.10 0.1 scale OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-14 SOD110 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 07 6 Philips Semiconductors Product specification General purpose diode BAS221 NOTES 1999 May 07 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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