PHILIPS BAS221

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D154
BAS221
General purpose diode
Product specification
Supersedes data of 1999 Apr 26
1999 May 07
Philips Semiconductors
Product specification
General purpose diode
BAS221
FEATURES
DESCRIPTION
• Small ceramic SMD package
The BAS221 is a general purpose diode fabricated in planar technology, and
encapsulated in the ceramic SOD110 package.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 200 V
• Repetitive peak reverse voltage:
max. 250 V
cathode mark
handbook, 4 columns
a
k
k
a
• Repetitive peak forward current:
max. 1 A.
bottom view
side view
top view
MAM139
APPLICATIONS
• General purpose switching in e.g.
surface mounted circuits.
Marking code: JS.
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
250
V
−
200
V
−
300
mA
−
1
A
t = 1 µs
−
20
A
t = 100 µs
−
7
A
t = 10 ms
−
2
A
VRRM
repetitive peak reverse voltage
VR
continuous reverse voltage
IF
continuous forward current
note 1; see Fig.2
IFRM
repetitive peak forward current
tp < 0.5 ms; δ ≤ 0.25
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge; see Fig.4
Ptot
total power dissipation
−
400
mW
Tstg
storage temperature
Tamb = 25 °C; note 1
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
1999 May 07
2
Philips Semiconductors
Product specification
General purpose diode
BAS221
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
thermal resistance from junction to tie-point
Rth j-a
thermal resistance from junction to ambient
VALUE
UNIT
200
K/W
315
K/W
MAX.
UNIT
note 1
Note
1. Device mounted on an FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
IR
PARAMETER
forward voltage
reverse current
CONDITIONS
see Fig.3
IF = 100 mA
1
V
IF = 200 mA
1.25
V
IF = 300 mA
1.4
V
VR = 200 V
100
nA
VR = 200 V; Tj = 150 °C
100
µA
see Fig.5
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω; measured
at IR = 3 mA; see Fig.7
50
ns
1999 May 07
3
Philips Semiconductors
Product specification
General purpose diode
BAS221
GRAPHICAL DATA
400
MBG384
600
MDA986
handbook, halfpage
handbook, halfpage
IF
(mA)
IF
(mA)
(1)
300
(2)
(3)
400
200
200
100
0
0
0
50
100
150
200
Tamb (°C)
1
2
VF (V)
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
Device mounted on an FR4 printed-circuit board.
Fig.2
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
MDA987
102
handbook, full pagewidth
IFSM
(A)
10
1
10−1
1
10
102
103
tp (µs)
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 07
4
104
Philips Semiconductors
Product specification
General purpose diode
BAS221
MBG381
2
10halfpage
handbook,
Cd
(pF)
IR
(µA)
0.8
10
(1)
1
(2)
0.6
1
10
MBG447
1.0
handbook, halfpage
0.4
10 2
0.2
100
0
Tj (oC)
0
200
2
(1) VR = VRmax; maximum values.
(2) VR = VRmax; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5
Fig.6
Reverse current as a function of junction
temperature.
handbook, full pagewidth
tr
4
6
VR (V)
8
Diode capacitance as a function of reverse
voltage; typical values.
tp
t
D.U.T.
RS = 50 Ω
V = VR I F x R S
IF
10%
IF
SAMPLING
OSCILLOSCOPE
t
R i = 50 Ω
MGA881
(1)
90%
VR
input signal
(1) IR = 3 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05.
Oscilloscope: rise time tr = 0.35 ns.
Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance).
Fig.7 Reverse recovery time and waveforms.
1999 May 07
t rr
5
output signal
Philips Semiconductors
Product specification
General purpose diode
BAS221
PACKAGE OUTLINE
D
E
A
y
cathode
identifier
DIMENSIONS (mm are the original dimensions)
1
2
0
0.5
1 mm
UNIT
A
max.
D
E
y
mm
1.6
2.10
1.90
1.40
1.10
0.1
scale
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-14
SOD110
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 07
6
Philips Semiconductors
Product specification
General purpose diode
BAS221
NOTES
1999 May 07
7
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© Philips Electronics N.V. 1999
SCA 64
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Printed in The Netherlands
115002/3180/02/pp8
Date of release: 1999 May 07
Document order number:
9397 750 05977