DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 (DO-35) package The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package. • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 100 V handbook, halfpage k a • Repetitive peak forward current: max. 225 mA. MAM246 The diode is type branded. APPLICATIONS • High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VRRM repetitive peak reverse voltage VR continuous reverse voltage IF continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current CONDITIONS MIN. MAX. UNIT − 100 V − 75 V − 75 mA − 225 mA t = 1 µs − 4 A t = 1 ms − 1 A t=1s − 0.5 A − 250 mW see Fig.2; note 1 square wave; Tj = 25 °C prior to surge; see Fig.4 Tamb = 25 °C; note 1 Ptot total power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature − 175 °C Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. 1999 May 26 2 Philips Semiconductors Product specification High-speed diode 1N914 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage IF = 10 mA; see Fig.3 IR reverse current see Fig.5 MAX. UNIT 1 V VR = 20 V 25 nA VR = 75 V 5 µA VR = 20 V; Tj = 150 °C 50 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 8 ns when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4 ns when switched from IF = 50 mA; tr = 20 ns; see Fig.8 2.5 V Vfr forward recovery voltage THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 10 mm 240 K/W Rth j-a thermal resistance from junction to ambient lead length 10 mm; note 1 500 K/W Note 1. Device mounted on a printed circuit-board without metallization pad. 1999 May 26 3 Philips Semiconductors Product specification High-speed diode 1N914 GRAPHICAL DATA MGD289 100 MBG464 600 handbook, halfpage IF (mA) IF (mA) 400 (1) 50 (2) (3) 200 0 0 100 o T amb ( C) 0 200 0 2 VF (V) (1) Tj = 175 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. Device mounted on an FR4 printed-circuit board; lead length 10 mm. Fig.2 1 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10−1 1 10 102 103 tp (µs) Based on square wave currents. Tj = 25 °C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1999 May 26 4 104 Philips Semiconductors Product specification High-speed diode 1N914 MGD006 103 handbook, halfpage MGD004 1.2 handbook, halfpage IR (µA) 10 Cd (pF) 2 1.0 (1) (2) (3) 10 0.8 1 0.6 10−1 10−2 0 100 Tj (oC) 0.4 200 0 (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. f = 1 MHz; Tj = 25 °C. Fig.5 Fig.6 Reverse current as a function of junction temperature. 1999 May 26 5 10 VR (V) 20 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode 1N914 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 Ω IF SAMPLING OSCILLOSCOPE t rr t R i = 50 Ω V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 kΩ 450 Ω V I 90% R S = 50 Ω D.U.T. OSCILLOSCOPE V fr R i = 50 Ω 10% MGA882 t tr input signal Fig.8 Forward recovery voltage test circuit and waveforms. 1999 May 26 6 t tp output signal Philips Semiconductors Product specification High-speed diode 1N914 PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD27 (1) b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.56 1.85 4.25 25.4 0 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC JEDEC EIAJ SOD27 A24 DO-35 SC-40 EUROPEAN PROJECTION ISSUE DATE 97-06-09 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. 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