PHILIPS SA605

RF COMMUNICATIONS PRODUCTS
SA605
High performance low power mixer FM IF
system
Product specification
Replaces data of November 3, 1992
RF Communications Handbook
Philips Semiconductors
1997 Nov 07
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
DESCRIPTION
SA605
PIN CONFIGURATION
The SA605 is a high performance monolithic low-power FM IF
system incorporating a mixer/oscillator, two limiting intermediate
frequency amplifiers, quadrature detector, muting, logarithmic
received signal strength indicator (RSSI), and voltage regulator. The
SA605 combines the functions of Signetics’ SA602 and SA604A, but
features a higher mixer input intercept point, higher IF bandwidth
(25MHz) and temperature compensated RSSI and limiters
permitting higher performance application. The SA605 is available
in 20-lead dual-in-line plastic, 20-lead SOL (surface-mounted
miniature package) and 20-lead SSOP (shrink small outline
package).
N, D and DK Packages
RFIN
1
RF BYPASS 2
19 IF AMP DECOUPLING
3
18 IF AMP IN
XTAL OSC
4
17
MUTEIN
5
16 IF AMP OUT
VCC
6
15 GND
RSSIOUT
7
14 LIMITER IN
XTAL OSC
The SA605 and SA615 are functionally the same device types. The
difference between the two devices lies in the guaranteed
specifications. The SA615 has a higher ICC, lower input third order
intercept point, lower conversion mixer gain, lower limiter gain, lower
AM rejection, lower SINAD, higher THD, and higher RSSI error than
the SA605. Both the SA605 and SA615 devices will meet the EIA
specifications for AMPS and TACS cellular radio applications.
20 MIXER OUT
IF AMP DECOUPLING
MUTED AUDIO OUT 8
13
LIMITER DECOUPLING
UNMUTED AUDIO OUT 9
12
LIMITER DECOUPLING
QUADRATURE IN 10
11
LIMITER OUT
SR00335
Figure 1. Pin Configuration
For additional technical information please refer to application notes
AN1994, 1995 and 1996, which include example application
diagrams, a complete overview of the product, and artwork for
reference.
FEATURES
• Low power consumption: 5.7mA typical at 6V
• Mixer input to >500MHz
• Mixer conversion power gain of 13dB at 45MHz
• Mixer noise figure of 4.6dB at 45MHz
• XTAL oscillator effective to 150MHz (L.C. oscillator to 1GHz local
APPLICATIONS
• Cellular radio FM IF
• High performance communications receivers
• Single conversion VHF/UHF receivers
• SCA receivers
• RF level meter
• Spectrum analyzer
• Instrumentation
• FSK and ASK data receivers
• Log amps
• Wideband low current amplification
oscillator can be injected)
• 102dB of IF Amp/Limiter gain
• 25MHz limiter small signal bandwidth
• Temperature compensated logarithmic Received Signal Strength
Indicator (RSSI) with a dynamic range in excess of 90dB
• Two audio outputs - muted and unmuted
• Low external component count; suitable for crystal/ceramic/LC
filters
• Excellent sensitivity:
0.22µV into 50Ω matching network for 12dB
SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF
at 45MHz and IF at 455kHz
• SA605 meets cellular radio specifications
• ESD hardened
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
20-Pin Plastic Dual In-Line Package (DIP)
–40 to +85°C
SA605N
SOT146-1
20-Pin Plastic Small Outline Large (SOL) package
–40 to +85°C
SA605D
SOT163-1
20-Pin Plastic Shrink Small Outline Package (SSOP)
–40 to +85°C
SA605DK
SOT266-1
1997 Nov 07
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853-1401 18663
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
BLOCK DIAGRAM
20
19
18
17
16
15
14
13
IF
AMP
12
11
LIMITER
RSSI
OSCILLATOR
1
2
E
B
3
4
5
6
7
8
9
10
SR00336
Figure 2. Block Diagram
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
9
V
VCC
Single supply voltage
TSTG
Storage temperature range
-65 to +150
Operating ambient temperature range SA605
–40 to +85
TA
θJA
Thermal impedance
D package
N package
SSOP package
°C
°C
90
75
117
°C/W
DC ELECTRICAL CHARACTERISTICS
VCC = +6V, TA = 25°C; unless otherwise stated.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA605
MIN
VCC
Power supply voltage range
4.5
ICC
DC current drain
4.55
Mute switch input threshold
(ON)
MAX
8.0
V
5.7
6.55
mA
1.7
(OFF)
1997 Nov 07
UNITS
TYP
V
1.0
3
V
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
AC ELECTRICAL CHARACTERISTICS
TA = 25°C; VCC = +6V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 5.1k; RF
level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with C-message weighted filter and de-emphasis capacitor.
Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics.
The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed
parameters.
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
SA605
MIN
TYP
UNITS
MAX
Mixer/Osc section (ext LO = 300mV)
fIN
fOSC
Input signal frequency
500
MHz
Crystal oscillator frequency
150
MHz
Noise figure at 45MHz
5.0
dB
-10
dBm
Third-order input intercept point
f1 = 45.0; f2 = 45.06MHz
Conversion power gain
Matched 14.5dBV step-up
10
50Ω source
RF input resistance
Single-ended input
3.0
RF input capacitance
13
(Pin 20)
IF amp gain
Limiter gain
1.25
dB
dB
4.7
kΩ
3.5
Mixer output resistance
15
-1.7
4.0
pF
1.5
kΩ
50Ω source
39.7
dB
50Ω source
62.5
dB
Input limiting -3dB, R17 = 5.1k
Test at Pin 18
-113
dBm
AM rejection
80% AM 1kHz
29
34
43
dB
Audio level, R10 = 100k
15nF de-emphasis
80
150
260
mVRMS
Unmuted audio level, R11 = 100k
150pF de-emphasis
SINAD sensitivity
RF level -118dB
IF section
-34
480
mV
16
dB
-42
dB
THD
Total harmonic distortion
S/N
Signal-to-noise ratio
No modulation for noise
IF RSSI output, R9 = 100kΩ1
IF level = -118dBm
0
160
650
mV
IF level = -68dBm
1.9
2.5
3.1
V
IF level = -18dBm
4.0
4.8
5.6
73
dB
V
RSSI range
R9 = 100kΩ Pin 16
90
dB
RSSI accuracy
R9 = 100kΩ Pin 16
+1.5
dB
IF input impedance
1.40
1.6
kΩ
IF output impedance
0.85
1.0
kΩ
Limiter input impedance
1.40
1.6
kΩ
Unmuted audio output resistance
58
kΩ
Muted audio output resistance
58
kΩ
RF/IF section (int LO)
Unmuted audio level
4.5V = VCC, RF level = -27dBm
450
mVRMS
System RSSI output
4.5V = VCC, RF level = -27dBm
4.3
V
NOTE:
1. The generator source impedance is 50Ω, but the SA605 input impedance at Pin 18 is 1500Ω. As a result, IF level refers to the actual signal
that enters the SA605 input (Pin 8) which is about 21dB less than the ”available power” at the generator.
1997 Nov 07
4
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
network does not cause 12dB(v) insertion loss, a fixed or variable
resistor can be added between the first IF output (Pin 16) and the
interstage network.
CIRCUIT DESCRIPTION
The SA605 is an IF signal processing system suitable for second IF
or single conversion systems with input frequency as high as 1GHz.
The bandwidth of the IF amplifier is about 40MHz, with 39.7dB(v) of
gain from a 50Ω source. The bandwidth of the limiter is about
28MHz with about 62.5dB(v) of gain from a 50Ω source. However,
the gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ
source applications. The overall system is well-suited to battery
operation as well as high performance and high quality products of
all types.
The signal from the second limiting amplifier goes to a Gilbert cell
quadrature detector. One port of the Gilbert cell is internally driven
by the IF. The other output of the IF is AC-coupled to a tuned
quadrature network. This signal, which now has a 90° phase
relationship to the internal signal, drives the other port of the
multiplier cell.
Overall, the IF section has a gain of 90dB. For operation at
intermediate frequencies greater than 455kHz, special care must be
given to layout, termination, and interstage loss to avoid instability.
The input stage is a Gilbert cell mixer with oscillator. Typical mixer
characteristics include a noise figure of 5dB, conversion gain of
13dB, and input third-order intercept of -10dBm. The oscillator will
operate in excess of 1GHz in L/C tank configurations. Hartley or
Colpitts circuits can be used up to 100MHz for xtal configurations.
Butler oscillators are recommended for xtal configurations up to
150MHz.
The demodulated output of the quadrature detector is available at
two pins, one continuous and one with a mute switch. Signal
attenuation with the mute activated is greater than 60dB. The mute
input is very high impedance and is compatible with CMOS or TTL
levels.
The output of the mixer is internally loaded with a 1.5kΩ resistor
permitting direct connection to a 455kHz ceramic filter. The input
resistance of the limiting IF amplifiers is also 1.5kΩ. With most
455kHz ceramic filters and many crystal filters, no impedance
matching network is necessary. To achieve optimum linearity of the
log signal strength indicator, there must be a 12dB(v) insertion loss
between the first and second IF stages. If the IF filter or interstage
1997 Nov 07
SA605
A log signal strength completes the circuitry. The output range is
greater than 90dB and is temperature compensated. This log signal
strength indicator exceeds the criteria for AMPs or TACs cellular
telephone.
NOTE: dB(v) = 20log VOUT/VIN
5
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
-25dB,
-10dB,
1500/50Ω PAD 50/50Ω PAD
-29dB,
929/50Ω PAD
2430
3880
SW8
19
18
SW7
16
C16
SW6
FLT2
17
1.3k
C19
C21
C23
20
71.5
R17
5.1k
C22
FLT1
51.7
32.8
C20
C24
-36dB,
156k/50Ω PAD
96.5
71.5
32.6
SW9
-10.6dB,
50/50Ω PAD
51.5
96.5
50.5
SA605
15
C15
SW5
C18
14
C17
13
12
11
IF AMP
700
LIMITER
MIXER
QUAD
DETECTOR
OSCILLATOR
RSSI
EMITTER
1
2
BASE
3
SW1
C1
MUTE
SWITCH
4
SW3
5
SW4
6
7
C9
R9
C10
C11
8
R10
9
10
R11
C8
L1
C2
C7
R4
51.1
SW2
R1
C3
R3
R2
C13
IFT1
L2
X1
C6
C4 EXT.
LOC
OSC
44.545
C26
R7
30.5
45MHZ
45.06
MHZ
R6
178
”C” WEIGHTED
AUDIO
MEASUREMENT
CIRCUIT
R8
39.2
MUTE
MINI–CIRCUIT ZSC2–1B
C1
C2
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C17
C18
C12
C5
VCC
RSSI
AUDIO UNMUTED
AUDIO
OUTPUT
Automatic Test Circuit Component List
C21 100nF +10% Monolithic Ceramic
47pF NPO Ceramic
C23 100nF +10% Monolithic Ceramic
180pF NPO Ceramic
C25 100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
C26 390pF +10% Monolithic Ceramic
22pF NPO Ceramic
Flt 1 Ceramic Filter Murata SFG455A3 or equiv
1nF Ceramic
Flt 2 Ceramic Filter Murata SFG455A3 or equiv
10.0pF NPO Ceramic
IFT 1 455kHz 270µH TOKO #303LN-1129
100nF +10% Monolithic Ceramic
L1 300nH TOKO #5CB-1055Z
6.8µF Tantalum (minimum) *
L2 0.8µH TOKO 292CNS–T1038Z
100nF +10% Monolithic Ceramic
X1 44.545MHz Crystal ICM4712701
15nF +10% Ceramic
R9 100k +1% 1/4W Metal Film
150pF +2% N1500 Ceramic
R17
5.1k +5% 1/4W Carbon Composition
100nF +10% Monolithic Ceramic
R10 100k +1% 1/4W Metal Film (optional)
10pF NPO Ceramic
R11 100k +1% 1/4W Metal Film (optional)
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
* NOTE: This value can be reduced when a battery is the power source.
SR00337
Figure 3. SA605 45MHz Test Circuit (Relays as shown)
1997 Nov 07
C14
6
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
R17
5.1k
C15
FLT1
20
19
FLT2
C21
C23
18
17
16
15
C18
14
C17
13
12
11
IF AMP
700
LIMITER
MIXER
QUAD
DETECTOR
OSCILLATOR
RSSI
1
2
3
4
5
6
C1
MUTE
SWITCH
7
C9
R9
C10
C11
8
R10
9
10
R11
C8
C2
L1
R5
C7
C12
C13
C5
IFT1
L2
45MHz
INPUT
X1
C6
C26
C25
C14
MUTE
VCC
RSSI
AUDIO UNMUTED
AUDIO
OUTPUT
Application Component List
C1
C2
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C17
C18
C21
C23
C25
C26
Flt 1
Flt 2
IFT 1
L1
L2
X1
R9
R17
R10
R11
47pF NPO Ceramic
180pF NPO Ceramic
100nF +10% Monolithic Ceramic
22pF NPO Ceramic
1nF Ceramic
10.0pF NPO Ceramic
100nF +10% Monolithic Ceramic
6.8µF Tantalum (minimum)
100nF +10% Monolithic Ceramic
15nF +10% Ceramic
150pF +2% N1500 Ceramic
100nF +10% Monolithic Ceramic
10pF NPO Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
100nF +10% Monolithic Ceramic
390pF +10% Monolithic Ceramic
Ceramic Filter Murata SFG455A3 or equiv
Ceramic Filter Murata SFG455A3 or equiv
455kHz 270µH TOKO #303LN-1129
300nH TOKO #5CB-1055Z
0.8µH TOKO 292CNS–T1038Z
44.545MHz Crystal ICM4712701
100k +1% 1/4W Metal Film
5.1k +5% 1/4W Carbon Composition
100k +1% 1/4W Metal Film (optional)
100k +1% 1/4W Metal Film (optional)
* NOTE: This value can be reduced when a battery is the power source.
SR00338
Figure 4. SA605 45MHz Application Circuit
1997 Nov 07
7
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
RF GENERATOR
45MHz
SA605
NE605 DEMO BOARD
VCC (+6)
RSSI
AUDIO
DATA
C–MESSAGE
DC VOLTMETER
SCOPE
HP339A DISTORTION
ANALYZER
SR00339
Figure 5. SA605 Application Circuit Test Set Up
NOTES:
1. C-message: The C-message filter has a peak gain of 100 for accurate measurements. Without the gain, the measurements may be affected by the noise of the scope and HP339 analyzer.
2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or
16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter.
3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or
8kHz if you use 30kHz filters.
4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.22µV or -120dBm at the RF input.
5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout.
6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and
design. If the lowest RSSI voltage is 250mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity
will be worse than expected.
7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum
capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB.
8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 22kΩ, but should not
be below 10kΩ.
1997 Nov 07
8
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
20
RF = 45MHz
IF = 455kHz
VCC = 6V
RELATIVE TO AUDIO OUTPUT (dB)
AUDIO REF = 174mVRMS
0
5
–20
4
RSSI
(Volts)
THD NOISE
3
–40
AM (80%)
2
–60
–80
–100
–130
1
NOISE
RSSI
(Volts)
0
–110
–90
–70
–50
–30
–10
10
RF INPUT LEVEL (dBm)
SR00340
Figure 6. SA605 Application Board at 25°C
1997 Nov 07
9
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
DIP20: plastic dual in-line package; 20 leads (300 mil)
1997 Nov 07
10
SA605
SOT146-1
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SO20: plastic small outline package; 20 leads; body width 7.5 mm
1997 Nov 07
11
SA605
SOT163-1
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
1997 Nov 07
12
SA605
SOT266-1
Philips Semiconductors
Product specification
High performance low power mixer FM IF system
SA605
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Formative or in Design
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
Preliminary Specification
Preproduction Product
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Product Specification
Full Production
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
 Copyright Philips Electronics North America Corporation 1997
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 94088–3409
Telephone 800-234-7381
1997 Nov 07
13