RF COMMUNICATIONS PRODUCTS 20 19 18 17 16 15 14 IF AMP 13 12 11 9 10 LIMITER RSSI MIXER QUAD OSCILLATOR + – – + VREG E 1 2 3 AUDIO B 4 5 6 7 8 SA606 Low-voltage high performance mixer FM IF system Product Specification Replaces data of October 26, 1993 RF Data Handbook Philips Semiconductors 1997 Nov 07 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system DESCRIPTION SA606 PIN CONFIGURATION The SA606 is a low-voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator and audio and RSSI op amps. The SA606 is available in 20-lead SOL (surface-mounted small outline large package) and 20-lead SSOP (shrink small outline package). D and DK Packages RF IN+ 20 MIXER OUT 1 19 IF AMP DECOUPLING RF IN- DECOUPLING 2 The SA606 was designed for portable communication applications and will function down to 2.7V. The RF section is similar to the famous SA605. The audio and RSSI outputs have amplifiers with access to the feedback path. This enables the designer to level adjust the outputs or add filtering. OSCOUT 3 18 IF AMP IN OSCIN 4 17 IF AMP DECOUPLING 16 IF AMP OUT RSSI 5 FEATURES • Low power consumption: 3.5mA typical at 3V • Mixer input to >150MHz • Mixer conversion power gain of 17dB at 45MHz • XTAL oscillator effective to 150MHz (L.C. oscillator or external VCC 6 15 GND AUDIO FEEDBACK 7 14 LIMITER IN AUDIO 8 13 LIMITER DECOUPLING RSSI FEEDBACK 9 12 LIMITER DECOUPLING 11 LIMITER OUT QUADRATURE IN 10 SR00347 • ESD protection: oscillator can be used at higher frequencies) • 102dB of IF Amp/Limiter gain • 2MHz limiter small signal bandwidth • Temperature compensated logarithmic Received Signal Strength Figure 1. Pin Configuration Human Body Model 2kV Robot Model 200V APPLICATIONS • Portable cellular radio FM IF • Cordless phones • Wireless systems • RF level meter • Spectrum analyzer • Instrumentation • FSK and ASK data receivers • Log amps • Portable high performance communication receiver • Single conversion VHF receivers Indicator (RSSI) with a 90dB dynamic range • Low external component count; suitable for crystal/ceramic/LC filters • Excellent sensitivity: 0.31µV into 50Ω matching network for 12dB SINAD (Signal to Noise and Distortion ratio) for 1kHz tone with RF at 45MHz and IF at 455kHz • SA606 meets cellular radio specifications • Audio output internal op amp • RSSI output internal op amp • Internal op amps with rail-to-rail outputs ORDERING INFORMATION DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG # 20-Pin Plastic Small Outline Large (SOL) package (Surface-mount) -40 to +85°C SA606D SOT163-1 20-Pin Plastic Shrink Small Outline Package (SSOP) (Surface-mount) -40 to +85°C SA606DK SOT266-1 ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VCC Single supply voltage TSTG RATING UNITS 7 V Storage temperature range -65 to +150 °C TA Operating ambient temperature range -40 to +85 °C θJA Thermal impedance 90 117 °C/W 1997 Nov 07 D package DK package 2 853-1576 18665 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 BLOCK DIAGRAM 20 19 18 17 16 15 14 IF AMP 13 12 11 LIMITER RSSI MIXER QUAD OSCILLATOR – + + – VREG 1 E B 3 4 2 AUDIO 5 6 7 8 9 10 SR00348 Figure 2. Block Diagram DC ELECTRICAL CHARACTERISTICS VCC = +3V, TA = 25°C; unless otherwise stated. SYMBOL PARAMETER VCC Power supply voltage range ICC DC current drain TEST CONDITIONS LIMITS MIN TYP 2.7 3.5 MAX UNITS 7.0 V 4.2 mA AC ELECTRICAL CHARACTERISTICS TA = 25°C; VCC = +3V, unless otherwise stated. RF frequency = 45MHz + 14.5dBV RF input step-up; IF frequency = 455kHz; R17 = 2.4kΩ and R18 = 3.3kΩ; RF level = -45dBm; FM modulation = 1kHz with ±8kHz peak deviation. Audio output with de-emphasis filter and C-message weighted filter. Test circuit Figure 3. The parameters listed below are tested using automatic test equipment to assure consistent electrical characterristics. The limits do not represent the ultimate performance limits of the device. Use of an optimized RF layout will improve many of the listed parameters. SYMBOL PARAMETER TEST CONDITIONS LIMITS MIN TYP MAX UNITS Mixer/Osc section (ext LO = 220mVRMS) fIN fOSC Input signal frequency 150 MHz Crystal oscillator frequency 150 MHz Noise figure at 45MHz 6.2 dB -9 dBm Third-order input intercept point (50Ω source) f1 = 45.0; f2 = 45.06MHz Input RF level = -52dBm Conversion voltage gain Matched 14.5dBV step-up 13.5 50Ω source RF input resistance Single-ended input RF input capacitance 17 (Pin 20) 1.25 IF amp gain Limiter gain Input limiting -3dB, R17a = 2.4k, R17b = 3.3k Test at Pin 18 AM rejection 80% AM 1kHz Audio level Gain of two (2kΩ AC load) SINAD sensitivity IF level -110dBm dB dB 8 kΩ 3.0 Mixer output resistance 19.5 +2.5 4.0 pF 1.5 kΩ 50Ω source 44 dB 50Ω source 58 dB -109 dBm IF section 1997 Nov 07 3 45 70 120 17 dB 160 mV dB Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system AC ELECTRICAL CHARACTERISTICS SYMBOL SA606 (Continued) PARAMETER TEST CONDITIONS THD Total harmonic distortion S/N Signal-to-noise ratio No modulation for noise RF RSSI output, R9 = 2kΩ RF level = -118dBm LIMITS MAX UNITS MIN TYP -35 -50 dB 62 dB 0.3 .80 V RF level = -68dBm .70 1.1 1.80 V RF level = -23dBm 1.20 1.8 2.50 RSSI range 90 RSSI accuracy 1.3 V dB +1.5 dB 1.5 kΩ 0.3 kΩ 1.5 kΩ IF input impedance Pin 18 IF output impedance Pin 16 Limiter input impedance Pin 14 Limiter output impedance Pin 11 0.3 kΩ Limiter output voltage Pin 11 130 mVRMS Audio level 3V = VCC, RF level = -27dBm 120 mVRMS System RSSI output 3V = VCC, RF level = -27dBm 2.2 V System SINAD sensitivity RF level = -117dBm 12 dB 1.3 RF/IF section (int LO) 12dB(v) insertion loss, a fixed or variable resistor or an L pad for simultaneous loss and impedance matching can be added between the first IF output (Pin 16) and the interstage network. The overall gain will then be 90dB with 2MHz bandwidth. CIRCUIT DESCRIPTION The SA606 is an IF signal processing system suitable for second IF systems with input frequency as high as 150MHz. The bandwidth of the IF amplifier and limiter is at least 2MHz with 90dB of gain. The gain/bandwidth distribution is optimized for 455kHz, 1.5kΩ source applications. The overall system is well-suited to battery operation as well as high performance and high quality products of all types. The signal from the second limiting amplifier goes to a Gilbert cell quadrature detector. One port of the Gilbert cell is internally driven by the IF. The other output of the IF is AC-coupled to a tuned quadrature network. This signal, which now has a 90° phase relationship to the internal signal, drives the other port of the multiplier cell. The input stage is a Gilbert cell mixer with oscillator. Typical mixer characteristics include a noise figure of 6.2dB, conversion gain of 17dB, and input third-order intercept of -9dBm. The oscillator will operate in excess of 200MHz in L/C tank configurations. Hartley or Colpitts circuits can be used up to 100MHz for xtal configurations. Butler oscillators are recommended for xtal configurations up to 150MHz. The demodulated output of the quadrature drives an internal op amp. This op amp can be configured as a unity gain buffer, or for simultaneous gain, filtering, and 2nd-order temperature compensation if needed. It can drive an AC load as low as 5kΩ with a rail-to-rail output. The output impedance of the mixer is a 1.5kΩ resistor permitting direct connection to a 455kHz ceramic filter. The input resistance of the limiting IF amplifiers is also 1.5kΩ. With most 455kHz ceramic filters and many crystal filters, no impedance matching network is necessary. The IF amplifier has 43dB of gain and 5.5MHz bandwidth. The IF limiter has 60dB of gain and 4.5MHz bandwidth. To achieve optimum linearity of the log signal strength indicator, there must be a 12dB(v) insertion loss between the first and second IF stages. If the IF filter or interstage network does not cause 1997 Nov 07 A log signal strength completes the circuitry. The output range is greater than 90dB and is temperature compensated. This log signal strength indicator exceeds the criteria for AMPs or TACs cellular telephone. This signal drives an internal op amp. The op amp is capable of rail-to-rail output. It can be used for gain, filtering, or 2nd-order temperature compensation of the RSSI, if needed. NOTE: dB(v) = 20log VOUT/VIN 4 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system -25dB, -10dB, 1500/50Ω PAD 50/50Ω PAD -29dB, 929/50Ω PAD 2430 3880 C20 C24 SW9 FLT1 SW8 20 19 18 71.5 32.8 SW7 17 15 C16 SW6 FLT2 16 1.3k C19 C21 C23 51.7 R17 2.4k C22 -36dB, 156k/50Ω PAD 96.5 R18 3.3k 71.5 32.6 -10.6dB, 50/50Ω PAD C26 51.5 96.5 50.5 SA606 C15 SW5 C18 14 C17 13 IF AMP 12 11 LIMITER MIXER RSSI QUAD OSCILLATOR + – – + VREG AUDIO 1 2 3 4 5 6 7 8 9 10 R13 SW1 C1 SW3 SW11 R10 C9 C8 C2 R11 R9 SW4 SW10 R14 C12 C27 L1 C7 R12 R19 R4 51.1 SW2 R1 C3 R3 R2 C5 C10 L2 DEEMPHASIS FILTER IFT1 16k X1 C6 C4 EXT. LOC OSC 44.545 R7 30.5 45MHZ 45.06 MHZ R6 178 ”C” WEIGHTED AUDIO MEASUREMENT CIRCUIT R8 39.2 RSSI VCC C14 AUDIO MINI–CIRCUIT ZSC2–1B Automatic Test Circuit Component List C1 C2 C5 C6 C7 C8 C9 C10 C12 C14 C15 C17 C18 C21 C23 C25 C26 100pF NPO Ceramic 390pF NPO Ceramic 100nF +10% Monolithic Ceramic 22pF NPO Ceramic 1nF Ceramic 10.0pF NPO Ceramic 100nF +10% Monolithic Ceramic 10µF Tantalum (minimum) * 2.2µF 100nF +10% Monolithic Ceramic 10pF NPO Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic C27 Flt 1 Flt 2 IFT 1 L1 L2 X1 R9 R10 R11 R12 R13 R14 R17 R18 R19 2.2µF +10% Monolithic Ceramic Ceramic Filter Murata SFG455A3 or equiv Ceramic Filter Murata SFG455A3 or equiv 455kHz (Ce = 180pF) Toko RMC–2A6597H 147–160nH Coilcraft UNI–10/142–04J08S 0.8µH nominal Toko 292CNS–T1038Z 44.545MHz Crystal ICM4712701 2kΩ +1% 1/4W Metal Film 10kΩ +1% 10kΩ +1% 2kΩ +1% 20kΩ +1% 10kΩ +1% 2.4kΩ +5% 1/4W Carbon Composition 3.3kΩ 16kΩ *NOTE: This value can be reduced when a battery is the power source. SR00349 Figure 3. SA606 45MHz Test Circuit (Relays as shown) 1997 Nov 07 5 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 C26 R18 3.3k R17 2.4k C15 FLT1 20 19 FLT2 C21 C23 18 17 16 15 C18 14 C17 13 IF AMP 12 11 LIMITER MIXER RSSI QUAD OSCILLATOR +– –+ VREG 1 2 3 4 5 6 7 8 9 10 R11 10k C1 C9 C12 R10 10k C8 L1 C2 C27 2.2µF C7 C10 C5 R19 11k L2 45MHz INPUT C6 IFT1 X1 C19 390pF RSSI OUTPUT VCC C14 AUDIO NE606D/DK Demo Board Application Component List C1 C2 C5 C6 C7 C8 C9 C10 C12 C14 C15 C17 C18 C19 C21 51pF NPO Ceramic 220pF NPO Ceramic 100nF +10% Monolithic Ceramic 5-30pF trim cap 1nF Ceramic 10.0pF NPO Ceramic 100nF +10% Monolithic Ceramic 10µF Tantalum (minimum) * 2.2µF +10% Tantalum 100nF +10% Monolithic Ceramic 10pF NPO Ceramic 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 390pF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic C23 C26 C27 Flt 1 Flt 2 IFT 1 L1 L2 X1 R5 R10 R11 R17 R18 R19 100nF +10% Monolithic Ceramic 100nF +10% Monolithic Ceramic 2.2µF Tantalum Ceramic Filter Murata SFG455A3 or equiv Ceramic Filter Murata SFG455A3 or equiv 330µH TOKO 303LN-1130 .33µH TOKO SCB-1320Z 1.2µH 44.545MHz Crystal ICM4712701 Not Used in Application Board (see Note 8, pg 8) 8.2k +5% 1/4W Carbon Composition 10k +5% 1/4W Carbon Composition 2.4k +5% 1/4W Carbon Composition 3.3k +5% 1/4W Carbon Composition 11k +5% 1/4W Carbon Composition * NOTE: This value can be reduced when a battery is the power source. SR00350 Figure 4. SA606 45MHz Application Circuit 1997 Nov 07 6 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system RF GENERATOR 45MHz SA606 NE606 DEMO BOARD RSSI AUDIO VCC (+3) DE-EMPHASIS FILTER DC VOLTMETER C–MESSAGE SCOPE HP339A DISTORTION ANALYZER SR00351 Figure 5. SA606 Application Circuit Test Set Up NOTES: 1. C-message: The C-message and de-emphasis filter combination has a peak gain of 10 for accurate measurements. Without the gain, the measurements may be affected by the noise of the scope and HP339 analyzer. The de-emphasis filter has a fixed -6dB/Octave slope between 300Hz and 3kHz. 2. Ceramic filters: The ceramic filters can be 30kHz SFG455A3s made by Murata which have 30kHz IF bandwidth (they come in blue), or 16kHz CFU455Ds, also made by Murata (they come in black). All of our specifications and testing are done with the more wideband filter. 3. RF generator: Set your RF generator at 45.000MHz, use a 1kHz modulation frequency and a 6kHz deviation if you use 16kHz filters, or 8kHz if you use 30kHz filters. 4. Sensitivity: The measured typical sensitivity for 12dB SINAD should be 0.35µV or -116dBm at the RF input. 5. Layout: The layout is very critical in the performance of the receiver. We highly recommend our demo board layout. 6. RSSI: The smallest RSSI voltage (i.e., when no RF input is present and the input is terminated) is a measure of the quality of the layout and design. If the lowest RSSI voltage is 500mV or higher, it means the receiver is in regenerative mode. In that case, the receiver sensitivity will be worse than expected. 7. Supply bypass and shielding: All of the inductors, the quad tank, and their shield must be grounded. A 10-15µF or higher value tantalum capacitor on the supply line is essential. A low frequency ESR screening test on this capacitor will ensure consistent good sensitivity in production. A 0.1µF bypass capacitor on the supply pin, and grounded near the 44.545MHz oscillator improves sensitivity by 2-3dB. 8. R5 can be used to bias the oscillator transistor at a higher current for operation above 45MHz. Recommended value is 10kΩ. 1997 Nov 07 7 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 mA 6 VCC = 7V 5 VCC = 5V 4 VCC = 3V 3 VCC = 2.7V °C 2 –55 –35 –15 5 25 45 65 85 105 125 SR00352 Figure 6. ICC vs Temperature –8.0 –8.5 50 Ω INPUT INTERCEPT POINT (dBm) –9.0 2.7V 3V –9.5 –10.0 7V –10.5 –11.0 –11.5 –12.0 –12.5 –13.0 –13.5 –14.0 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 Temperature (°C) SR00353 Figure 7. Third Order Intercept Point vs Supply Voltage 1997 Nov 07 8 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 8.00 7.75 7.50 7.25 7.00 NOISE FIGURE 6.75 7.0V 6.50 6.25 3V 6.00 2.7V 5.75 5.50 5.25 5.00 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 TEMPERATURE (°C) SR00354 Figure 8. Mixer Noise Figure vs Supply Voltage 18.00 17.75 2.7V CONVERSION GAIN (dB) 17.50 3V 17.25 7.0V 17.00 16.75 16.50 16.25 16.00 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 TEMPERATURE (°C) SR00355 Figure 9. Conversion Gain vs Supply Voltage 1997 Nov 07 9 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 20 10 0 RF = 45MHz IF = 455kHz IF OUTPUT POWER (–dBm) –10 –20 –30 –40 3rd ORDER PRODUCT FUND PRODUCT –50 –60 –70 *50Ω INPUT –80 –66 –56 –46 –36 –26 –16 –6 4 14 24 34 RF* INPUT LEVEL (dBm) SR00356 Figure 10. Mixer Third Order Intercept and Compression 1997 Nov 07 10 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 5 AUDIO 0 –5 DECIBELS (dB) –10 –15 VCC = 3V RF = 45MHz –20 DEVIATION = ±8kHz AUDIO LEVEL = 104.9mVRMS –25 –30 AM REJECTION –35 –40 THD + NOISE –45 –50 –55 –60 NOISE –65 –125 –115 –105 –95 –85 –75 –65 –55 –45 –35 –25 RF LEVEL (dBm) SR00357 Figure 11. Sensitivity vs RF Level (-40°C) 5 AUDIO 0 –5 –10 DECIBELS (dB) VCC = 3V RF = 45MHz –20 DEVIATION = ±8kHz –25 AUDIO LEVEL = 117.6mVRMS –30 AM REJECTION –35 –40 –45 –50 THD + NOISE –55 –60 –65 –125 NOISE –115 –105 –95 –85 –75 –65 –55 –45 –35 –25 RF LEVEL (dBm) SR00358 Figure 12. Sensitivity vs RF Level (+25°C) 1997 Nov 07 11 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 5 AUDIO 0 –5 DECIBELS (dB) –10 –15 VCC = 3V RF = 45MHz –20 DEVIATION = ±8kHz AUDIO LEVEL = 127mVRMS –25 –30 AM REJECTION –35 –40 –45 THD + NOISE –50 –55 –60 –65 –125 NOISE –115 –105 –95 –85 –75 –65 –55 –45 –35 –25 RF LEVEL (dBm) SR00359 Figure 13. Sensitivity vs RF Level (Temperature 85°C) 5 AUDIO 0 –5 –10 VCC = 3V RF = 45MHz RF LEVEL = -45dBm –15 DECIBELS (dB) –20 DEVIATION = ±8kHz AUDIO LEVEL = +117.6mVRMS –25 –30 –35 –40 DISTORTION –45 –50 AM REJECTION –55 –60 NOISE –65 –55 –35 –15 5 25 45 TEMPERATURE (°C) 65 85 105 Figure 14. Relative Audio Level, Distortion, AM Rejection and Noise vs Temperature 1997 Nov 07 12 125 SR00360 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 2.400 2.000 +85°C VOLTAGE (V) 1.600 ROOM 1.200 -40°C 0.800 0.400 0.000 –95 –85 –75 –65 –55 –45 –35 –25 –15 –5 5 IF LEVEL (dBm) SR00361 Figure 15. RSSI (455kHz IF @ 3V) 2.1 2.0 1.9 1.8 1.7 1.6 VOLTAGE (V) 1.5 1.4 +85°C 1.3 +27°C 1.2 -40°C 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 –125 –115 –105 –95 –85 –75 –65 –55 –45 –35 –25 RF LEVEL (dBm) SR00362 Figure 16. RSSI vs RF Level and Temperature - VCC = 3V 1997 Nov 07 13 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 V 300 VCC = 7V 250 mV RMS 200 VCC = 5V 150 VCC = 3V 100 VCC = 2.7V 50 °C 0 –55 –35 –15 5 25 45 65 85 105 125 SR00363 Figure 17. Audio Output vs Temperature 1997 Nov 07 14 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 *Applies to Stand-Alone data sheets only. KTDN9/91 NE606 SR00365 Figure 18. SA606D SOL Product Board Layout (2X Actual Size* — For Reference Use Only) 1997 Nov 07 15 Philips Semiconductors Product specification Low-voltage high performance mixer FM IF system SA606 606 Silk Screen 606 TOP 606 BOTTOM NOTE; All views are TOP VIEW and not actual size. For reference only. SR00366 Figure 19. 1997 Nov 07 16 Philips Semiconductors Product specification Low-voltage high-performance mixer FM IF system SO20: plastic small outline package; 20 leads; body width 7.5 mm 1997 Nov 07 17 SA606 SOT163-1 Philips Semiconductors Product specification Low-voltage high-performance mixer FM IF system SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm 1997 Nov 07 18 SA606 SOT266-1 Philips Semiconductors Product specification Low-voltage high-performance mixer FM IF system SA606 DEFINITIONS Data Sheet Identification Product Status Definition Objective Specification Formative or in Design This data sheet contains the design target or goal specifications for product development. Specifications may change in any manner without notice. Preliminary Specification Preproduction Product This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product Specification Full Production This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes at any time without notice, in order to improve design and supply the best possible product. Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. LIFE SUPPORT APPLICATIONS Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices, or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale. Copyright Philips Electronics North America Corporation 1997 All rights reserved. Printed in U.S.A. Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381 1997 Nov 07 19