PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits Average forward current: IF(AV) ≤ 0.5 A Reverse voltage: VR ≤ 20 V Low forward voltage AEC-Q101 qualified Small SMD plastic package 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection High-speed switching Low power consumption applications 1.4 Quick reference data Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit average forward current square wave; δ = 0.5; f = 20 kHz - - 0.5 A Tsp ≤ 130 °C - - 0.5 A Per diode IF(AV) Tamb ≤ 100 °C [1] VR reverse voltage - - 20 V VF forward voltage IF = 0.5 A - 360 390 mV IR reverse current VR = 20 V - 30 200 μA [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 anode (diode 1) 2 anode (diode 2) 3 common cathode Simplified outline Graphic symbol 3 3 1 2 1 2 006aaa438 3. Ordering information Table 3. Ordering information Type number PMEG2005CT Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PMEG2005CT P8* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 20 V IF(AV) average forward current square wave; δ = 0.5; f = 20 kHz - 0.5 A Per diode Tamb ≤ 100 °C PMEG2005CT Product data sheet [1] Tsp ≤ 130 °C - 0.5 A IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 - 3.9 A IFSM non-repetitive peak forward current square wave; tp = 8 ms - 10 A All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 [2] © NXP B.V. 2010. All rights reserved. 2 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit [3] - 330 mW [4] - 400 mW [1] - 460 mW Per device; one diode loaded total power dissipation Ptot Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on a ceramic PCB, Al2O3, standard footprint. [2] Tj = 25 °C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics Table 6. Symbol Thermal characteristics Parameter Conditions Min Typ Max Unit [2] - - 375 K/W [3] - - 310 K/W [4] - - 270 K/W [5] - - 60 K/W Per device; one diode loaded Rth(j-a) Rth(j-sp) PMEG2005CT Product data sheet thermal resistance from junction to ambient in free air thermal resistance from junction to solder point [1] [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 3 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 006aab533 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 0.01 0 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab534 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.25 0.1 0.02 0.33 0.2 0.05 0.01 0 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 4 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 006aab535 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 102 0.25 0.1 0.02 0.33 0.2 0.05 0.01 0 10 1 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit forward voltage IF = 0.1 mA - 95 130 mV IF = 1 mA - 155 190 mV Per device VF 215 240 mV - 285 330 mV IF = 500 mA - 360 390 mV reverse current VR = 10 V - 11 40 μA VR = 20 V - 30 200 μA Cd diode capacitance VR = 1 V; f = 1 MHz - 66 80 pF - 22 - ns [1] Product data sheet - IF = 100 mA IR trr PMEG2005CT IF = 10 mA reverse recovery time [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 5 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 006aab536 10 IF (A) 1 006aab537 10−2 IR (A) 10−3 (1) (2) (1) 10−4 (2) 10−1 10−5 (3) (3) 10−2 (4) 10−6 (5) 10−7 10−3 10−8 10−4 (4) 10−9 0 0.2 0.4 0.6 0 5 VF (V) 10 15 20 VR (V) (1) Tj = 150 °C (1) Tj = 125 °C (2) Tj = 125 °C (2) Tj = 85 °C (3) Tj = 85 °C (3) Tj = 25 °C (4) Tj = 25 °C (4) Tj = −40 °C (5) Tj = −40 °C Fig 4. Forward current as a function of forward voltage; typical values Fig 5. Reverse current as a function of reverse voltage; typical values 006aab538 125 Cd (pF) 100 75 50 25 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 °C Fig 6. Diode capacitance as a function of reverse voltage; typical values PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 6 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 006aab539 0.25 PF(AV) (W) 006aab540 0.5 PR(AV) (W) (4) 0.20 0.4 (3) (2) 0.15 0.3 (1) (1) (2) 0.10 0.2 0.05 0.1 (3) (4) 0.0 0.0 0.0 0.25 0.50 0.75 0 5 10 15 IF(AV) (A) Tj = 150 °C Tj = 125 °C (1) δ = 0.1 (1) δ = 1 (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 (4) δ = 0.5 Fig 7. Average forward power dissipation as a function of average forward current; typical values 006aab541 0.75 Fig 8. Average reverse power dissipation as a function of reverse voltage; typical values 006aab542 0.75 (1) IF(AV) (A) (1) IF(AV) (A) (2) (2) 0.50 0.50 (3) (3) (4) 0.25 (4) 0.25 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 Tj = 150 °C 125 150 175 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Average forward current as a function of ambient temperature; typical values Product data sheet 100 Tj = 150 °C (1) δ = 1; DC PMEG2005CT 75 FR4 PCB, mounting pad for cathode 1 cm2 FR4 PCB, standard footprint Fig 9. 20 VR (V) Fig 10. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 7 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 006aab543 0.75 (1) IF(AV) (A) 006aab544 0.75 (1) IF(AV) (A) (2) (2) 0.50 0.50 (3) (3) (4) 0.25 (4) 0.25 0.0 0.0 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 11. Average forward current as a function of ambient temperature; typical values Fig 12. Average forward current as a function of solder point temperature; typical values 8. Test information tr RS = 50 Ω tp t D.U.T. 10 % + IF IF V = VR + IF × RS SAMPLING OSCILLOSCOPE trr t Ri = 50 Ω VR (1) 90 % mga881 input signal output signal (1) IR = 1 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 13. Reverse recovery time test circuit and waveforms PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 8 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 14. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 9, 10, 11 and 12 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 15. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PMEG2005CT SOT23 [1] PMEG2005CT Product data sheet Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 9 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 16. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 17. Wave soldering footprint SOT23 (TO-236AB) PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 10 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG2005CT v.2 20100622 Product data sheet - PMEG2005CT_1 - - Modifications: PMEG2005CT_1 PMEG2005CT Product data sheet • • Table 2 “Pinning”: Graphic symbol amended Section 13 “Legal information”: updated 20090604 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 11 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from national authorities. PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 12 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEG2005CT Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 22 June 2010 © NXP B.V. 2010. All rights reserved. 13 of 14 PMEG2005CT NXP Semiconductors 500 mA low VF dual MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . . 9 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 22 June 2010 Document identifier: PMEG2005CT