PMEG2005AELD 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Rev. 1 — 10 May 2011 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits Forward current: IF ≤ 0.5 A Reverse voltage: VR ≤ 20 V Low forward voltage: VF ≤ 440 mV Ultra small and leadless SMD plastic package AEC-Q101 qualified Solderable side pads Package height typ. 0.37 mm 1.3 Applications Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications Ultra high-speed switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter IF(AV) average forward current Conditions reverse current VR reverse voltage VF forward voltage Typ Max Unit - - 0.5 A - - 0.5 A - 300 600 μA - - 20 V - 365 440 mV square wave; δ = 0.5; f = 20 kHz Tamb ≤ 85 °C [1] Tsp ≤ 130 °C IR Min VR = 10 V IF = 500 mA [2] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 2. Pinning information Table 2. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 1 2 2 sym001 Transparent top view [1] The marking bar indicates the cathode. 3. Ordering information Table 3. Ordering information Type number Package PMEG2005AELD Name Description Version - leadless ultra small plastic package; 2 terminals; body 1 × 0.6 × 0.4 mm SOD882D 4. Marking Table 4. Marking codes Type number Marking code[1] PMEG2005AELD 1001 0000 [1] For SOD882D binary marking code description, see Figure 1. 4.1 Binary marking code description CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig 1. PMEG2005AELD Product data sheet SOD882D binary marking code description All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VR reverse voltage IF(AV) average forward current Min Max Unit - 20 V - 0.5 A Tsp ≤ 130 °C - 0.5 A - 2.5 A square wave; δ = 0.5; f = 20 kHz Tamb ≤ 85 °C PMEG2005AELD Product data sheet [1] IFRM repetitive peak forward current tp ≤ 1 ms; δ ≤ 0.25 IFSM non-repetitive peak forward current square wave; tp = 8 ms [2] - 3 A Ptot total power dissipation Tamb ≤ 25 °C [3] - 340 mW [1] - 660 mW [4] - 1000 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Tj = 25 °C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) Rth(j-sp) Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Min Typ Max Unit [1][2] - - 370 K/W [1][3] - - 190 K/W [1][4] - - 125 K/W [5] - - 50 K/W [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. [5] Soldering point of cathode tab. 006aac557 103 duty cycle = Zth(j-a) (K/W) 1 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 10 10–3 0.02 0.01 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 006aac558 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.75 0.33 0.25 0.2 0.1 0 0.05 0.02 0.01 10 10–3 10–2 10–1 1 10 102 103 tp (s) FR4 PCB, mounting pad for cathode 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac559 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.1 0.05 0.02 0.01 0 10 10–3 0.25 0.2 10–2 10–1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min forward voltage VF reverse current IR diode capacitance Cd Max - 20 60 mV IF = 1 mA - 65 110 mV IF = 10 mA - 125 190 mV IF = 100 mA - 210 290 mV IF = 500 mA - 365 440 mV VR = 10 V - 300 600 μA VR = 20 V - 500 1500 μA - 19 25 pF - 6 - ns VR = 1 V; f = 1 MHz [2] [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. 006aac560 10 006aac561 1 IR (A) 10–1 IF (A) Unit IF = 0.1 mA reverse recovery time trr Typ [1] (1) (2) 1 (3) 10–2 (1) (2) 10–1 10–3 (4) (3) (4) (5) 10–4 10–2 10–5 10–3 (5) 10–6 10–4 10–7 0 0.2 0.4 0.6 0.8 0 5 VF (V) (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values PMEG2005AELD Product data sheet 15 20 VR (V) (1) Tj = 150 °C Fig 5. 10 Fig 6. Reverse current as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 006aac562 30 Cd (pF) 20 10 0 0 5 10 15 20 VR (V) f = 1 MHz; Tamb = 25 °C Fig 7. Diode capacitance as a function of reverse voltage; typical values 006aac563 0.4 PF(AV) (W) 006aac564 1.5 (4) PR(AV) (W) (3) 0.3 (2) 1.0 (1) 0.2 (1) (2) (3) 0.5 0.1 (4) 0.0 0.00 0.0 0.25 0.50 0.75 0 2 IF(AV) (A) Tj = 150 °C (2) δ = 0.2 (2) δ = 0.9 (3) δ = 0.5 (3) δ = 0.8 (4) δ = 1 (4) δ = 0.5 Average forward power dissipation as a function of average forward current; typical values Product data sheet 8 10 Tj = 125 °C (1) δ = 1 PMEG2005AELD 6 VR (V) (1) δ = 0.1 Fig 8. 4 Fig 9. Average reverse power dissipation as a function of reverse voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 006aac565 0.75 006aac566 0.75 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 0.50 0.50 (3) (3) (4) 0.25 (4) 0.25 0.00 0.00 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm2 FR4 PCB, standard footprint Tj = 150 °C Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 10. Average forward current as a function of ambient temperature; typical values 006aac567 0.75 Fig 11. Average forward current as a function of ambient temperature; typical values 006aac568 0.75 (1) (1) IF(AV) (A) IF(AV) (A) (2) (2) 0.50 0.50 (3) (3) (4) 0.25 (4) 0.25 0.00 0.00 0 25 50 75 100 125 150 175 Tamb (°C) 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C Ceramic PCB, Al2O3, standard footprint Tj = 150 °C (1) δ = 1; DC (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 12. Average forward current as a function of ambient temperature; typical values PMEG2005AELD Product data sheet Fig 13. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal (1) IR = 1 mA Fig 14. Reverse recovery time test circuit and waveforms P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 15. Duty cycle definition The current ratings for the typical waveforms as shown in Figure 10, 11, 12 and 13 are calculated according to the equations: I F ( AV ) = I M × δ with IM defined as peak current, I RMS = I F ( AV ) at DC, and I RMS = I M × δ with IRMS defined as RMS current. 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 9. Package outline 0.65 0.55 0.4 max 2 0.30 0.22 0.65 1.05 0.95 1 0.30 0.22 0.55 0.45 cathode marking on top side Dimensions in mm 10-08-06 Fig 16. Package outline SOD882D 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 10000 PMEG2005AELD [1] SOD882D 2 mm pitch, 8 mm tape and reel -315 For further information and the availability of packing methods, see Section 14. 11. Soldering 1.4 0.2 solder lands 0.8 (2×) 0.6 (2×) 0.7 (2×) solder resist solder paste Dimensions in mm 0.3 0.4 1 1.3 sod882d_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering SOD882D PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PMEG2005AELD v.1 20110510 Product data sheet - - PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. 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Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 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No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PMEG2005AELD Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 10 May 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 PMEG2005AELD NXP Semiconductors 20 V, 0.5 A low VF MEGA Schottky barrier rectifier 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Binary marking code description. . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 May 2011 Document identifier: PMEG2005AELD