WEITRON MUN5230DW

MUN5211DW Series
Surface Mount Dual Bias Resistor Transistor
NPN Silicon
2
3
1
6 5
P b Lead(Pb)-Free
1
4
5
6
NPN+NPN
Maximum Ratings
Symbol
VCEO
VCBO
IC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Thermal Characteristics
Characteristics (1)
3
SOT-363(SC-88)
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Symbol
Max
Unit
PD
187 (2)
256 (3)
1.5 (2)
2.0 (3)
mW
Total Device Dissipation TA=25 C
mW/ C
R θJA
670(2)
490(3)
C/W
TJ,Tstg
-55 to +150
C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature
2
4
I
1.One Junction Heated
2.FR-4 @ Minimum Pad
3.FR-4 @ 1.0 I 1.0 Inch Pad
Device Marking and Resistor Values
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
7A
7B
7C
7D
7E
7F
7G
10
22
47
10
10
4.7
1.0
10
22
47
47
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
7H
7J
7K
7L
7M
7N
7P
2.2
4.7
4.7
22
2.2
100
47
2.2
4.7
47
47
47
100
22
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Device
1.0
1/6
Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
Collector-Base Cutoff Current (VCB=50Vdc, I E =0)
I CBO
-
100
nAdc
Collector-Emitter Cutoff Current(VCE=50Vdc, IB =0)
I CEO
-
500
nAdc
Emitter-Base Cutoff Current (VEB =6.0Vdc, IC=0) MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
I EBO
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I C =10uAdc, IE =0)
V(BR)CBO
50
-
Vdc
Collector-Emitter Breakdown Voltage(4) (I C=2.0mA, I B=0)
V(BR)CEO
50
-
Vdc
Off C har acter istics
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
HFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
0.25
Vdc
Vdc
Vdc
Max
Unit
On Characteristics (4)
DC Current Gain
(IC= 5.0 mAdc, VCE=10Vdc)
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
Collector-Emitter Saturation Voltage
(IC= 10 mAdc, IB= 0.3mAdc)
(IC= 10 mAdc, IB= 5.0mAdc) MUN5230DW/MUN5231DW
(IC= 10 mAdc, IB= 1.0mAdc) MUN5215DW/MUN5216DW
VCE(sat)
-
-
MUN5232DW/MUN5233DW/MUN5234DW
Output Voltage (on)
(VCC = 5.0 V, VB= 2.5V, R L =1.0 k )
(VCC = 5.0 V, VB= 3.5V, RL =1.0 k )
(VCC = 5.0 V, VB= 5.5V, RL =1.0 k )
(VCC = 5.0 V, VB= 4.0V, R L =1.0 k )
Output Voltage (off )
(VCC = 5.0 V, VB= 0.5V, R L =1.0 k )
(VCC = 5.0 V, VB= 0.05V, R L =1.0 k )
(VCC = 5.0 V, VB= 0.25V, R L =1.0 k )
MUN5211DW
MUN5212DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5213DW
MUN5236DW
MUN5237DW
VOL
VOL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
-
-
MUN5230DW
MUN5215DW
MUN5216DW
MUN5233DW
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5211DW Series
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
R1/R2
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
On Characteristics (5)
Input Resistor
MUN5211DW
MUN5212DW
MUN5213DW
MUN5214DW
MUN5215DW
MUN5216DW
MUN5230DW
MUN5231DW
MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5236DW
MUN5237DW
Resistor Ratio
MUN5211DW/MUN5212DW
MUN5213DW/MUN5236DW
MUN5214DW
MUN5215DW/MUN5216DW
MUN5230DW/MUN5231DW/MUN5232DW
MUN5233DW
MUN5234DW
MUN5235DW
MUN5237DW
5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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Rev.A 29-Dec-05
MUN5211DW Series
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
P D , P OWE R DIS S IPAT ION (mW)
300
250
200
150
100
R θJ A = 833 C /W
50
0
- 50
0
50
100
T A , AMB IE NT T E MP E R AT UR E ( C )
1
IC/IB = 10
25 C
0.1
75 C
0.01
0.001
150
0
20
40
IC , COLLECTOR CURRENT (m A)
FIG 1. Derating Curve
TA = 75 C
25 C
-25 C
Cob , CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
4
VCE = 10 V
100
10
50
FIG 2. VCE(sat) versus IC
1000
1
10
IC , COLLECTOR CURRENT (m A)
3
2
1
0
100
f = 1 MHz
IE = 0 V
TA = 25 C
0
10
20
30
40
VR , REVERSE BIAS VOL TAGE (VOLTS)
FIG 3. DC Current Gain
100
10
VO = 0.2 V
V in, INPUT VOLTAGE (VOLTS)
TA = -25 C
10
50
FIG 4. Output Capacitance
25 C
75 C
IC, COLLECTOR CURRENT (mA)
TA = -25 C
1
0.1
0.01
TA = -25 C
25 C
75 C
1
VO = 5 V
0.001
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
0.1
10
FIG 5. Output Current versus Input Voltage
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0
10
40
20
30
IC, COLLECTOR CURRENT (m A)
50
FIG 6. Input Voltage versus Output Current
5/6
Rev.A 29-Dec-05
MUN5211DW Series
SOT-363 Package Outline Dimensions
Unit:mm
A
6
5
SOT-363
4
B C
1
2
D
3
E
H
K
J
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L
M
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Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25
Rev.A 29-Dec-05