WEITRON DTC114EM

DTC114EM Series
Bias Resistor Transistor NPN Silicon
P b Lead(Pb)-Free
3
COLLECTOR
3
1
2
R1
1
BASE
R2
SOT-723
2
EMITTER
Maximum Ratings (TA=25°C unless otherwise noted)
Rating
Symbol
VCBO
Value
50
Unit
V
VCEO
50
IC
100
V
mA
Symbol
Max
Unit
PD
260
2.0
mW
mW/°C
RθJA
480
˚C/W
PD
600
4.8
mW
mW/°C
RθJA
205
°C/W
Junction Temperature Range
TJ
+150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
FR-4 Board(1) TA=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient(1)
Total Device Dissipation FR-5 Board
FR-4 Board(2) TA=25˚C
Derate above 25˚C
Thermal Resistance, Junction to Ambient(2)
1. FR-4 @ Minimum pad
2. FR-4 @1.0 x 1.0 Inch pad
Device Marking and Resistor Values
Device
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
8A
8B
8C
8D
94
8F
8H
10
22
47
10
10
4.7
2.2
10
22
47
47
∞
∞
2.2
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
8J
8K
8L
8M
8N
8P
8T
4.7
4.7
22
2.2
100
47
47
4.7
47
47
47
100
22
∞
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
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DTC114EM Series
WEITRON
Electrical Characteristics (TA=25˚C Unless Otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)CEO
50
-
-
V
V(BR)CBO
50
-
-
V
Collector-Base Cutoff Voltage
VCB=50V, IE=0
ICBO
-
-
100
nA
Collector-Emitter Cutoff Current
VCE=50V, IB=0
ICEO
-
-
500
nA
-
-
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
0.2
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage(1)
IC=2.0mA, IB=0
Collector-Base Breakdown Voltage
IC=10µA, IE=0
Emitter-Base Cutoff Current
VEB=6.0V, IC=0
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
IEBO
mA
3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
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DTC114EM Series
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Electrical Characteristics (TA=25°C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
160
60
100
140
140
250
250
15
27
140
130
140
150
140
350
-
-
VCE(sat)
-
-
0.25
-
VOL
-
-
0.2
V
On Characteristics(3)
DC Current Gain
VCE=10V, I C=5.0mA
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
Collector-Emitter Saturation Voltage
IC=10mA, IB=0.3mA
DTC123EM
IC=10mA, IB=5.0mA
DTC143TM / DTC114TM
IC=10mA, IB=1.0mA
DTC143EM / DTC143ZM
DTC124XM / DTC144TM
Output Voltage(on)
VCC=5.0V, VB=2.5V RL=1.0KΩ
VCC=5.0V, VB=3.5V RL=1.0KΩ
VCC=5.0V, VB=5.5V RL=1.0KΩ
VCC=5.0V, VB=4.0V RL=1.0KΩ
DTC114EM
DTC124EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC144EM
DTC144TM
DTC115EM
DTC144WM
3. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%
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DTC114EM Series
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ElectricalCharacteristics (TA=25°C Unless Otherwise noted)
Symbol
Characteristics
Min
Typ
Max
Unit
4.9
-
-
V
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
15.4
70
32.9
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
61.1
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
On Characteristics(4)
Output Voltage(off)
VCC=5.0V, VB=0.5V RL=1.0KΩ
VCC=5.0V, VB=0.25V RL=1.0KΩ
DTC143TM
DTC143ZM
DTC114TM
DTC144TM
Input Resistor
Resistor Ratio
VOH
DTC114EM
DTC124EM
DTC144EM
DTC114YM
DTC114TM
DTC143TM
DTC123EM
DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC115EM
DTC144WM
DTC144TM
DTC114EM / DTC124EM
DTC144EM / DTC115EM
DTC114YM
DTC143TM / DTC114TM / DTC144TM
DTC123EM / DTC143EM
DTC143ZM
DTC124XM
DTC123JM
DTC144WM
R1
R1/R2
kΩ
-
4. PulseTest: Pulse Width < 300us, Duty Cycle < 2.0%
POWER DISSIPATION, PD
300
250
200
150
100
50
R JA = 480°C/W
0
TA , AMBIENT TEMPERATURE ( °C)
Figure.1 Derating Curve
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DTC114EM Series
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VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS - DTC114EM Series
1
IC/I B = 10
°C
TA
25°C
0.1
75°C
0.01
0.001
0
20
40
IC, COLLECTOR CURRENT (mA)
50
4
1000
VCE = 10 V
TA
°C
25°C
−25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
h FE, DC CURRENT GAIN (NORMALIZED)
Figure.2 VCE(sat) vs I C
3
2
1
0
100
f = 1 MHz
IE = 0 V
TA = 25°C
0
Figure.3 DC Current Gain
Figure.4 Output Capacitance
10
25°C
75°C
TA
10
VO = 0.2 V
°C
1
0.1
0.01
TA
°C
25°C
V in, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT (mA)
100
50
10
20
30
40
VR , REVERSE BIAS VOLTAGE (V)
75°C
1
VO = 5 V
0.001
0
1
2
3
4
5
6
7
8
9
10
0.1
0
Vin , INPUT VOLTAGE (VOLTS)
WEITRON
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure.6 Input Voltage vs Output Current
Figure.5 Output Current vs Input Voltage
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DTC114EM Series
WE IT R ON
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS - DTC124EM
1
IC/IB = 10
TA
0.1
25°C
°C
75°C
0.01
0.001
0
20
40
I C, COLLECTOR CURRENT (mA)
50
Figure.7 VCE(sat) vs I C
4
VCE = 10 V
TA
°C
25°C
−25°C
100
10
1
Cob, CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
1000
3
2
1
0
100
10
f = 1 MHz
IE = 0 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
0
10
Figure 8. DC Current Gain
75°C
0.1
0.01
VO = 5 V
0
2
4
6
50
VO = 0.2 V
°C
TA
1
0.001
40
100
25°C
10
30
Figure.9 Output Capacitance
Vin, INPUT VOLTAGE (V)
IC ,COLLECTOR CURRENT (mA)
100
20
VR , REVERSE BIAS VOLTAGE (V)
8
TA
10
75°C
25°C
1
0.1
10
°C
0
10
20
30
40
50
Vin , INPUT VOLTAGE (V)
IC , COLLECTOR CURRENT (mA)
Figure.10 Output Current vs Input Voltage
Figure.11 Input Voltage versus Output Current
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DTC114EM Series
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VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC144EM
10
IC/IB = 10
1
TA
25°C
°C
75°C
0.1
0.01
0
20
50
40
IC, COLLECTOR CURRENT (mA)
1000
1
VCE= 10 V
TA
Cob , CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
Figure.12 VCE(sat) vs I C
°C
25°C
-25°C
100
10
1
10
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
100
0
10
Figure.13 DC Current Gain
75°C
VO = 0.2 V
TA
°C
1
0.1
0.01
0.001
VO = 5 V
0
2
4
6
8
°C
25°C
75°C
10
1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure.15 Output Current vs Input Voltage
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TA
0.1
10
Vin , INPUT VOLTAGE (V)
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50
40
100
25°C
10
30
Figure 14. Output Capacitance
Vin, INPUT VOLTAGE (V)
IC, COLLECTOR CURRENT(mA)
100
20
VR, REVERSE BIAS VOLTAGE (V)
Figure.16 Input Voltage vs Output Current
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11-Apr-07
DTC114EM Series
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hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114YM
1
IC/IB = 10
TA
°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
80
TA
VCE = 10
°C
25°C
200
−25°C
150
100
50
0
6 8 10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
Figure.17 VCE(sat) vs I C
Figure.18 DC Current Gain
1
2
4
100
I C, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
3.5
C ob, CAPACITANCE (pF)
250
IC , COLLECTOR CURRENT (mA)
4
3
2.5
2
1.5
1
0.5
0
300
0
2
4
6
8
10 15 20
TA
25°C
−25°C
10
VO = 5 V
1
25 30 35 40 45 50
°C
0
2
4
6
8
10
Vin , INPUT VOLTAGE (V)
VR , REVERSE BIAS VOLTAGE (V)
Figure.20 Output Current vs Input Voltage
Figure.19 Output Capacitance
10
Vin , INPUT VOLTAGE (V)
VO = 0.2 V
TA
°C
25°C
75°C
1
0.1
0
10
20
30
40
IC , COLLECTOR CURRENT (mA)
50
Figure.21 Input Voltage vs Output Current
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DTC114EM Series
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TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM µP OR
OTHER LOGIC
Figure.22 Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
VCC
OUT
IN
LOAD
Figure.23 Open Collector Inverter:
Inverts the Input Signal
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Figure.24 Inexpensive, Unregulated Current Source
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11-Apr-07
DTC114EM Series
SOT-723 Outline Demensions
Unit:mm
b1
SOT-723
3
b
e
A
1.15
0.15
Nom
0.50
0.20
0.3
0.12
1.20
0.80
0.40 BSC
1.20
0.20
Max
0.55
0.27
0.35
0.17
1.25
0.85
1.25
0.25
L
C
D
Min
0.45
0.15
0.25
0.07
1.15
0.75
Dim
A
b
b1
C
D
E
e
HE
L
E
TOP VIEW
2
1
HE
SOLDERING FOOTPRINT
Unit:mm
0.40
0.40
1.0
0.40
0.40
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0.40
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