DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage SYMBOL • High current capability VCEO collector-emitter voltage −40 V ICM peak collector current −1 A RCEsat equivalent on-resistance <700 mΩ • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose applications • Battery driven equipment (mobile phones, video cameras, hand-held devices). DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage 3 3 DESCRIPTION 1 PNP low VCEsat transistor in a SC-89 (SOT490) plastic package. NPN complement: PBSS2540F. 1 2 2 Top view MAM411 MARKING TYPE NUMBER Fig.1 MARKING CODE PBSS3540F Simplified outline (SC-89; SOT490) and symbol. 2D LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −500 mA ICM peak collector current − −1 A IBM peak base current Ptot total power dissipation Tstg − −100 mA − 250 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C 2001 Jul 13 Tamb ≤ 25 °C 2 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient in free air VALUE UNIT 500 K/W CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCB = −40 V; IE = 0 − − −100 nA VCB = −40 V; IE = 0; Tj = 150 °C − − −50 µA VEB = −5 V; IC = 0 − − −100 nA ICBO collector-base cut-off current IBEO emitter-base cut-off current hFE DC current gain VCE = −2 V VCEsat MIN. IC = −10 mA 200 − − IC = −100 mA; note 1 150 − − IC = −500 mA; note 1 40 − − collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −50 mV IC = −100 mA; IB = −5 mA − − −130 mV IC = −200 mA; IB = −10 mA − − −200 mV IC = −500 A; IB = −50 mA; note 1 − − −350 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 440 <700 mΩ VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1 − − −1.2 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 − − −1.1 V Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 10 pF fT transition frequency IC = −100 mA; VCE = −5 V; f = 100 MHz 100 300 − MHz Note 1. Pulse test: tp ≤ 300 ms; δ ≤ 0.02. 2001 Jul 13 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2001 Jul 13 REFERENCES IEC JEDEC EIAJ SC-89 4 EUROPEAN PROJECTION ISSUE DATE 98-10-23 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. 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