DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D186 PBSS5140S 40 V low VCEsat PNP transistor Product specification 2001 Nov 15 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S QUICK REFERENCE DATA FEATURES • High power dissipation (830 mW) SYMBOL • Ultra low collector-emitter saturation voltage VCEO collector-emitter voltage −40 V IC collector current (DC) −1 A • High current switching ICM peak collector current −2 A • Improved device reliability due to reduced heat generation. RCEsat equivalent on-resistance <500 mΩ • 1 A continuous current PARAMETER MAX. UNIT PINNING APPLICATIONS PIN • Medium power switching and muting • Linear regulators • DC/DC converter • LCD back-lighting DESCRIPTION 1 base 2 collector 3 emitter • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). handbook, halfpage1 DESCRIPTION 2 2 3 1 PNP low VCEsat transistor in a SOT54 plastic package. NPN complement: PBSS4140S. MAM460 3 MARKING TYPE NUMBER MARKING CODE PBSS5140S Fig.1 Simplified outline (SOT54) and symbol. S5140S LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT open emitter − −40 collector-emitter voltage open base − −40 V emitter-base voltage open collector − −5 V collector current (DC) − −1 A ICM peak collector current − −2 A IBM peak base current − −1 A Ptot total power dissipation − 830 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C VCBO collector-base voltage VCEO VEBO IC Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. 2001 Nov 15 2 V Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE in free air; note 1 UNIT 150 K/W Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = −40 V; IC = 0 − − −100 nA VCB = −40 V; IC = 0; Tj = 150 °C − − −50 µA VCE = −30 V; IB = 0 − − −100 nA nA ICEO collector-emitter cut-off current IEBO emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 hFE DC current gain VCE = −5 V; IC = −1 mA 300 − − VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − IC = −100 mA; IB = −1 mA − − −200 VCEsat collector-emitter saturation voltage UNIT mV IC = −500 mA; IB = −50 mA − − −250 mV IC = −1 A; IB = −100 mA − − −500 mV RCEsat equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 <500 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V fT transition frequency IC = −50 mA; VCE = −10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = −10 V; IE = Ie = 0; f = 1 MHz − − 12 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2001 Nov 15 3 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S MHC088 1200 MHC089 −10 handbook, halfpage handbook, halfpage hFE 1000 VBE (V) (1) 800 600 −1 (2) (1) (2) 400 (3) (3) 200 0 −10−1 −1 −10 −102 −10−1 −10−1 −103 −104 IC (mA) −1 VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC090 −103 handbook, halfpage −10 −102 Base-emitter voltage as a function of collector current; typical values. MHC091 102 handbook, halfpage VCEsat (mV) RCEsat (Ω) −102 10 −103 −104 IC (mA) (1) −10 1 (2) (3) (1) (2) (3) −1 −1 −10 −102 −103 IC (mA) 10−1 −10−1 −104 −1 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2001 Nov 15 4 −10 −102 −103 −104 IC (mA) Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S MHC092 300 handbook, halfpage fT (MHz) 250 200 150 100 50 0 −200 0 −400 −600 −800 −1000 IC (mA) VCE = −10 V. Fig.6 Transition frequency as a function of collector current. 2001 Nov 15 5 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.56 0.45 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2001 Nov 15 REFERENCES IEC JEDEC EIAJ TO-92 SC-43 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140S DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 15 7 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp8 Date of release: 2001 Nov 15 Document order number: 9397 750 08841