SL3S1203_1213 UCODE G2iL and G2iL+ Rev. 3.2 — 9 November 2010 198732 Product short data sheet PUBLIC 1. General description NXP’s UCODE G2iL series transponder ICs offer leading-edge read range and support industry-first features such as a Tag Tamper Alarm, Data Transfer, Digital Switch, and advanced privacy-protection modes. Very high chip sensitivity (−18 dBm) enables longer read ranges with simple, single-port antenna designs. When connected to a power supply, the READ as well as the WRITE range can be boosted to a sensitivity of −27 dBm. In fashion and retail the UCODE G2iL series improve read rates and provide for theft deterrence. In the electronic device market, they’re ideally suited for device configuration, activation, production control, and PCB tagging. In authentication applications, they protect brands and guard against counterfeiting. They can also be used to tag containers, electronic vehicles, airline baggage, and more. In addition to the EPC specifications the G2iL offers an integrated Product Status Flag (PSF) feature and read protection of the memory content. On top of the G2iL features the G2iL+ offers an integrated tag tamper alarm, digital switch, external supply mode, read range reduction and data transfer mode. 2. Features and benefits 2.1 Key features UHF RFID Gen2 tag chip according EPCglobal v1.2.0 with 128 bit EPC memory Memory read protection Integrated Product Status Flag (PSF) Tag tamper alarm Digital switch Data transfer mode Real Read Range Reduction (Privacy Mode) External supply mode 2.1.1 Memory 128-bit of EPC memory 64-bit Tag IDentifier (TID) including 32-bit factory locked unique serial number 32-bit kill password to permanently disable the tag 32-bit access password to allow a transition into the secured state Data retention: 20 years SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ Broad international operating frequency: from 840 MHz to 960 MHz Long read/write ranges due to extremely low power design Reliable operation of multiple tags due to advanced anti-collision READ protection WRITE Lock Wide specified temperature range: −40 °C up to +85 °C 2.2 Key benefits 2.2.1 End user benefit Prevention of unauthorized memory access through read protection Indication of tag tampering attempt by use of the tag tamper alarm feature Electronic device configuration and / or activation by the use of the digital switch / data transfer mode Theft deterrence supported by the PSF feature (PSF alarm or EPC code) Small label sizes, long read ranges due to high chip sensitivity Product identification through unalterable extended TID range, including a 32-bit serial number Reliable operation in dense reader and noisy environments through high interference suppression 2.2.2 Antenna design benefits High sensitivity enables small and cost efficient antenna designs Low Q-Value eases broad band antenna design for global usage 2.2.3 Label manufacturer benefit Consistent performance on different materials due to low Q-factor Ease of assembly and high assembly yields through large chip input capacitance Fast first WRITE of the EPC memory for fast label initialization 2.3 Custom commands PSF Alarm Built-in PSF (Product Status Flag), enables the UHF RFID tag to be used as EAS tag (Electronic Article Surveillance) tag without the need for a back-end data base. Read Protect Protects all memory content including CRC16 from unauthorized reading. ChangeConfig Configures the additional features of the chip like external supply mode, tamper alarm, digital switch, read range reduction or data transfer. The UCODE G2iL is equipped with a number of additional features and custom commands. Nevertheless, the chip is designed in a way standard EPCglobal READ/WRITE/ACCESS commands can be used to operate the features. No custom commands are needed to take advantage of all the features in case of unlocked EPC memory. SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 2 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 3. Applications 3.1 Markets Fashion (Apparel and footwear) Retail Electronics Fast Moving Consumer Goods Asset management Electronic Vehicle Identification 3.2 Applications Supply chain management Item level tagging Pallet and case tracking Container identification Product authentication PCB tagging Cost efficient, low level seals Wireless firmware download Wireless product activation 4. Quick reference data Table 1. Symbol Quick reference data Parameter Conditions Min Typ Max Unit Tamb ≤ 55 °C 20 - - year 1000 10000[1] - cycle EEPROM characteristics retention time tret Nendu(W) [1] write endurance Tamb ≤ 25 °C 5. Ordering information Table 2. Ordering information Type number SL3S1203_1213_SDS Product short data sheet PUBLIC Package Name Description Version SL3S1203FUF Wafer bumped G2iL die on sawn 8” wafer not applicable SL3S1213FUF Wafer bumped G2iL+ die on sawn 8” wafer not applicable SL3S1203FTB0 XSON6 G2iL, plastic extremely thin small outline SOT886F1 package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SL3S1213FTB0 XSON6 G2iL+, plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 SOT886F1 © NXP B.V. 2010. All rights reserved. 3 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 6. Marking Table 3. Marking codes Type number Marking code Comment Version SL3S1203FTB0 UN UCODE G2iL SOT886 SL3S1213FTB0 UQ UCODE G2iL+ SOT886 7. Block diagram The SL3S12x3 IC consists of three major blocks: - Analog Interface - Digital Controller - EEPROM The analog part provides stable supply voltage and demodulates data received from the reader for being processed by the digital part. Further, the modulation transistor of the analog part transmits data back to the reader. The digital section includes the state machines, processes the protocol and handles communication with the EEPROM, which contains the EPC and the user data. ANALOG RF INTERFACE DIGITAL CONTROL EEPROM VREG PAD VDD RECT DEMOD data in ANTENNA READ/WRITE CONTROL ACCESS CONTROL MOD PAD ANTICOLLISION MEMORY data out EEPROM INTERFACE CONTROL R/W PAD VDD PAD I/O CONTROL OUT RF INTERFACE CONTROL I/O CONTROL SEQUENCER CHARGE PUMP 001aam226 Fig 1. SL3S1203_1213_SDS Product short data sheet PUBLIC Block diagram of G2iL IC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 4 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 8. Pinning information OUT VDD SL3S12x3FTB0 RFN NXP trademark RFP RFP 1 6 VDD n.c. 2 5 n.c. RFN 3 4 OUT 001aan103 Transparent top view 001aam529 Fig 2. Pinning bare die Fig 3. Pin configuration for SOT886 8.1 Pin description Table 4. Symbol Description OUT output pin RFN grounded antenna connector VDD external supply RFP ungrounded antenna connector Table 5. SL3S1203_1213_SDS Product short data sheet PUBLIC Pin description bare die Pin description SOT886 Pin Symbol Description 1 RFP ungrounded antenna connector 2 n.c. not connected 3 RFN grounded antenna connector 4 OUT output pin 5 n.c. not connected 6 VDD external supply All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 5 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 9. Wafer layout 9.1 Wafer layout (1) OUT RFN (5) Y (4) (6) X (7) VDD RFP (8) (2) (3) not to scale! 001aak871 (1) X-scribe line width: 15 μm (2) Y-scribe line width: 15 μm (3) Chip step, x-length: 485 μm (4) Chip step, y-length: 435 μm (5) Bump to bump distance X (OUT - RFN): 383 μm (6) Bump to bump distance Y (RFN - RFP): 333 μm (7) Distance bump to metal sealring X: 40,3 μm (outer edge - top metal) (8) Distance bump to metal sealring Y: 40,3 μm Bump size X × Y: 60 μm × 60 μm Remark: OUT and VDD are used with G2iL+ only Fig 4. SL3S1203_1213_SDS Product short data sheet PUBLIC G2iL wafer layout All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 6 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 10. Mechanical specification 10.1 Wafer specification See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**”. 10.1.1 Wafer Table 6. Specifications Wafer Designation each wafer is scribed with batch number and wafer number Diameter 200 mm (8”) Thickness 75 μm ± 15 μm Number of pads 4 Pad location non diagonal/ placed in chip corners Distance pad to pad RFN-RFP 333.0 µm Distance pad to pad OUT-RFN 383.0 µm Process CMOS 0.14 µm Batch size 25 wafers Potential good dies per wafer 130.000 Wafer backside Material Si Treatment ground and stress release Roughness Ra max. 0.5 μm, Rt max. 5 μm Chip dimensions Die size including scribe 0.485 mm × 0.435 mm = 0.211 mm2 Scribe line width: x-dimension = 15 μm y-dimension = 15 μm Passivation on front Type Sandwich structure Material PE-Nitride (on top) Thickness 1.75 μm total thickness of passivation Au bump Bump material > 99.9% pure Au Bump hardness 35 – 80 HV 0.005 Bump shear strength > 70 MPa Bump height 18 μm Bump height uniformity SL3S1203_1213_SDS Product short data sheet PUBLIC within a die ± 2 μm – within a wafer ± 3 μm – wafer to wafer ± 4 μm Bump flatness ±1.5 μm All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 7 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ Table 6. Specifications Bump size – RFP, RFN 60 × 60 μm – OUT, VDD 60 × 60 μm Bump size variation ± 5 μm 10.1.2 Fail die identification No inkdots are applied to the wafer. Electronic wafer mapping (SECS II format) covers the electrical test results and additionally the results of mechanical/visual inspection. See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**” 10.1.3 Map file distribution See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**” SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 8 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 11. Functional description 11.1 Air interface standards The UCODE G2iL fully supports all parts of the "Specification for RFID Air Interface EPCglobal, EPCTM Radio-Frequency Identity Protocols, Class-1 Generation-2 UHF RFID, Protocol for Communications at 860 MHz to 960 MHz, Version 1.2.0". 11.2 Power transfer The interrogator provides an RF field that powers the tag, equipped with a UCODE G2iL. The antenna transforms the impedance of free space to the chip input impedance in order to get the maximum possible power for the G2iL on the tag. The G2iL+ can also be supplied externally. The RF field, which is oscillating on the operating frequency provided by the interrogator, is rectified to provide a smoothed DC voltage to the analog and digital modules of the IC. The antenna that is attached to the chip may use a DC connection between the two antenna pads. Therefore the G2iL also enables loop antenna design. Possible examples of supported antenna structures can be found in the reference antenna design guide. 11.3 Data transfer 11.3.1 Reader to tag Link An interrogator transmits information to the UCODE G2iL by modulating an UHF RF signal. The G2iL receives both information and operating energy from this RF signal. Tags are passive, meaning that they receive all of their operating energy from the interrogator's RF waveform. In order to further improve the read range the UCODE G2iL can be externally supplied as well so the energy to operate the chip does not need to be transmitted by the reader. An interrogator is using a fixed modulation and data rate for the duration of at least one inventory round. It communicates to the G2iL by modulating an RF carrier using DSB-ASK with PIE encoding. For further details refer to Section 16, Ref. 1. Interrogator-to-tag (R=>T) communications. 11.3.2 Tag to reader Link An interrogator receives information from a G2iL by transmitting an unmodulated RF carrier and listening for a backscattered reply. The G2iL backscatters by switching the reflection coefficient of its antenna between two states in accordance with the data being sent. For further details refer to Section 16, Ref. 1, chapter 6.3.1.3. The UCODE G2iL communicates information by backscatter-modulating the amplitude and/or phase of the RF carrier. Interrogators shall be capable of demodulating either demodulation type. The encoding format, selected in response to interrogator commands, is either FM0 baseband or Miller-modulated subcarrier. SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 9 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 11.4 G2iL and G2iL+ differences The UCODE G2iL is tailored for application where mainly EPC or TID number space is needed. The G2iL+ in addition provides functionality such as tag tamper alarm, external supply operation to further boost read/write range (external supply mode), a Privacy mode reducing the read range or I/O functionality (data transfer to externally connected devices) required. The following table provides an overview of G2iL, G2iL+ special features. Table 7. Overview of G2iL and G2iL+ features Features G2iL G2iL+ Read protection (bankwise) yes yes PSF (Built-in Product Status Flag) yes yes Backscatter strength reduction yes yes Tag tamper alarm - yes Digital switch / Digital input - yes External supply mode - yes Data transfer - yes Real read range reduction - yes 11.5 Supported commands The G2iL supports all mandatory EPCglobal V1.2.0 commands. In addition the G2iL supports the following optional commands: • ACCESS The G2iL features the following custom commands described more in detail later: • • • • • ResetReadProtect (backward compatible to G2X) ReadProtect (backward compatible to G2X) ChangeEAS (backward compatible to G2X) EAS_Alarm (backward compatible to G2X) ChangeConfig (new with G2iL) 11.6 G2iL, G2iL+ memory The G2iL, G2iL+ memory is implemented according EPCglobal Class1Gen2 and organized in three sections: Table 8. G2iL memory sections Name Size Bank Reserved memory (32 bit ACCESS and 32 bit KILL password) 64 bit 00b EPC (excluding 16 bit CRC-16 and 16 bit PC) 128 bit 01b G2iL Configuration Word 16 bit 01b TID (including permalocked unique 32 bit serial number) 64 bit 10b The logical address of all memory banks begin at zero (00h). SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 10 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ In addition to the three memory banks one configuration word to handle the G2iL specific features is available at EPC bank 01 address 200h. Memory pages (16 bit words) pre-programmed to zero will not execute an erase cycle before writing data to it. This approach accelerates initialization of the chip and enables faster programming of the memory. 12. Limiting values Table 9. Limiting values[1][2] In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to RFN Symbol Parameter Conditions Min Max Unit −55 +125 °C Bare die and SOT886 limitations Tstg storage temperature Tamb ambient temperature VESD electrostatic discharge voltage Human body model [3] −40 +85 °C - ±2 kV Pad limitations SL3S1203_1213_SDS Product short data sheet PUBLIC Vi input voltage absolute limits, VDD-OUT pad −0.5 +2.5 V Io output current absolute limits input/output current, VDD-OUT pad −0.5 +0.5 mA Pi input power maximum power dissipation, RFP pad - 100 mW [1] Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical Characteristics section of this specification is not implied. [2] This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. Nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. [3] For ESD measurement, the die chip has been mounted into a CDIP20 package. All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 11 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 13. Characteristics 13.1 UCODE G2iL, G2iL+ bare die characteristics Table 10. G2iL, G2iL+ RF interface characteristics (RFN, RFP) Symbol Parameter fi input frequency Conditions Min Typ Max Unit 840 - 960 MHz - −18 - dBm - 30 - % Normal mode - no external supply, read range reduction OFF [1][2][7] Pi(min) minimum input power READ sensitivity Pi(min) minimum input power WRITE sensitivity, (write range/read range - ratio) Ci input capacitance parallel [3] - 0.77 - pF 915 MHz [3] - 9.7 - - 866 MHz [3] - 25 − j237 - Ω 915 MHz [3] - 23 − j224 - Ω 953MHz [3] - 21 − j216 - Ω Ext. supplied READ [1][2] - −27 - dBm Ext. supplied WRITE [2] - −27 - dBm externally supplied, 915 MHz [3] - 7 − j230 - Ω 4R on READ [1][2][4] - +12 - dBm 4R on WRITE [2][4] - +12 - dBm 4R on, 915 MHz [3] - 18 − j2 - Ω modulation resistance, max. backscatter = off [5] - 170 - Ω modulation resistance, max. backscatter = on [6] - 55 - Ω Q quality factor Z impedance External supply mode - VDD pad supplied, read range reduction OFF Pi(min) Z minimum input power impedance Read range reduction ON - no external supply Pi(min) Z minimum input power impedance Modulation resistance R resistance [1] Power to process a Query command. [2] Measured with a 50 Ω source impedance. [3] At minimum operating power. [4] It has to be assured the reader (system) is capable of providing enough field strength to give +12 dBm at the chip otherwise communication with the chip will not be possible. [5] Enables tag designs to be within ETSI limits for return link data rates of e.g. 320 kHz/M4. [6] Will result in up to 10 dB higher tag backscatter power at high field strength. [7] Results in approx. −18.5 dBm tag sensitivity on a 2 dBi gain antenna. SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 12 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ Table 11. VDD pin characteristics Symbol Parameter Conditions Minimum supply voltage/current - without assisted EEPROM WRITE Min Typ Max Unit [1][3][4] VDD input voltage minimum voltage - - 1.8 V IDD supply current minimum current, Iout = 0 μA - - 7 μA - - 110 μA minimum voltage, Iout = 0 μA - 1.8 1.85 V Iout = 100 μA - - 1.95 V minimum current, Iout = 0 μA - - 125 μA - - 265 μA Iout = 100 μA Minimum supply voltage/current - assisted EEPROM READ and WRITE VDD input voltage supply current IDD [2][3][4] Iout = 100 μA [3][5] Maximum supply voltage/current VDD input voltage absolute maximum voltage 2.2 - - V Ii(max) maximum input current absolute maximum current 280 - - μA [1] Activates Digital Output (OUT pin), increases read range (external supplied). [2] Activates Digital Output (OUT pin), increases read and write range (external supplied). [3] Operating the chip outside the specified voltage range may lead to undefined behaviour.1925. [4] Either the voltage or the current needs to be above given values to guarantee specified functionality. [5] No proper operation is guaranteed if both, voltage and current, limits are exceeded. Table 12. G2iL, G2iL+ VDD and OUT pin characteristics Symbol Parameter Conditions Min Typ Max Unit OUT pin characteristics VOL Low-level output voltage Isink = 1mA - - 100 mV VOH HIGH-level output voltage VDD = 1.8 V; Isource = −100µA 1.5 - - V VDD/OUT pin characteristics load capacitance CL output voltage Vo VDD - OUT pin max. [1] - - 5 pF maximum RF peak voltage on VDD-OUT pins [2] - - 500 mV [3] VDD/OUT pin tamper alarm characteristics RL(max) RL(min) maximum load resistance minimum load resistance resistance range high [4] - - <2 MΩ resistance range low [5] >20 - - MΩ [1] Is the sum of the allowed capacitance of the VDD and OUT pin referenced to RFN. [2] Is the maximum allowed RF input voltage coupling to the VDD/OUT pin to guarantee undisturbed chip functionality. [3] Resistance between VDD and OUT pin in checked during power up only. [4] Resistance range to achieve tamper alarm flag = 1. [5] Resistance range to achieve tamper alarm flag = 0: SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 13 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ For further reading we recommend application note “FAQ UCODE G2iL+“ (Ref. 22) describing the output characteristics more in detail. An example schematic is available in application note “UCODE G2iL+ Demoboard Manual“ (Ref. 23). The documents are available at NXP Document Control or at the website www.nxp.com. Table 13. Symbol G2iL, G2iL+ memory characteristics Parameter Conditions Min Typ Max Unit Tamb ≤ 55 °C 20 - - year 1000 10000[1] - cycle EEPROM characteristics retention time tret Nendu(W) [1] write endurance Tamb ≤ 25 °C 13.2 UCODE G2iL, G2iL+ SOT886 characteristics Table 14. Symbol G2iL, G2iL+ RF interface characteristics (RFN, RFP) Parameter Conditions Min Typ Max Unit Normal mode - no external supply, read range reduction OFF Pi(min) minimum input power READ sensitivity [1][2] - −17.6 - dB m Z impedance 915 MHz [3] - 21 -j199 - Ω [1] Power to process a Query command. [2] Measured with a 50 Ω source impedance. [3] At minimum operating power. Remark: For DC and memory characteristics refer to Table 11, Table 12 and Table 13. 14. Packing information 14.1 Wafer See Ref. 20 “Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**” 14.2 SOT886 Part orientation T1. For details please refer to http://www.standardics.nxp.com/packaging/packing/pdf/sot886.t1.t4.pdf. SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 14 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 15. Abbreviations Table 15. SL3S1203_1213_SDS Product short data sheet PUBLIC Abbreviations Acronym Description CRC Cyclic Redundancy Check DC Direct Current EAS Electronic Article Surveillance EEPROM Electrically Erasable Programmable Read Only Memory EPC Electronic Product Code (containing Header, Domain Manager, Object Class and Serial Number) FM0 Bi phase space modulation G2 Generation 2 IC Integrated Circuit PSF Product Status Flag RF Radio Frequency UHF Ultra High Frequency TID Tag IDentifier All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 15 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 16. References [1] EPCglobal: EPC Radio-Frequency Identity Protocols Class-1 Generation-2 UHF RFID Protocol for Communications at 860 MHz – 960 MHz, Version 1.1.0 (December 17, 2005) [2] EPCglobal: EPC Tag Data Standards [3] EPCglobal (2004): FMCG RFID Physical Requirements Document (draft) [4] EPCglobal (2004): Class-1 Generation-2 UHF RFID Implementation Reference (draft) [5] European Telecommunications Standards Institute (ETSI), EN 302 208: Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency identification equipment operating in the band 865 MHz to 868 MHz with power levels up to 2 W, Part 1 – Technical characteristics and test methods [6] European Telecommunications Standards Institute (ETSI), EN 302 208: Electromagnetic compatibility and radio spectrum matters (ERM) – Radio-frequency identification equipment operating in the band 865 MHz to 868 MHz with power levels up to 2 W, Part 2 – Harmonized EN under article 3.2 of the R&TTE directive [7] [CEPT1]: CEPT REC 70-03 Annex 1 [8] [ETSI1]: ETSI EN 330 220-1, 2 [9] [ETSI3]: ETSI EN 302 208-1, 2 V<1.1.1> (2004-09-Electromagnetic compatibility And Radio spectrum Matters (ERM) Radio Frequency Identification Equipment operating in the band 865 - MHz to 868 MHz with power levels up to 2 W Part 1: Technical characteristics and test methods. [10] [FCC1]: FCC 47 Part 15 Section 247 [11] ISO/IEC Directives, Part 2: Rules for the structure and drafting of International Standards [12] ISO/IEC 3309: Information technology – Telecommunications and information exchange between systems – High-level data link control (HDLC) procedures – Frame structure [13] ISO/IEC 15961: Information technology, Automatic identification and data capture – Radio frequency identification (RFID) for item management – Data protocol: application interface [14] ISO/IEC 15962: Information technology, Automatic identification and data capture techniques – Radio frequency identification (RFID) for item management – Data protocol: data encoding rules and logical memory functions [15] ISO/IEC 15963: Information technology — Radio frequency identification for item management — Unique identification for RF tags [16] ISO/IEC 18000-1: Information technology — Radio frequency identification for item management — Part 1: Reference architecture and definition of parameters to be standardized [17] ISO/IEC 18000-6: Information technology automatic identification and data capture techniques — Radio frequency identification for item management air interface — Part 6: Parameters for air interface communications at 860–960 MHz [18] ISO/IEC 19762: Information technology AIDC techniques – Harmonized vocabulary – Part 3: radio-frequency identification (RFID) SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 16 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ [19] U.S. Code of Federal Regulations (CFR), Title 47, Chapter I, Part 15: Radio-frequency devices, U.S. Federal Communications Commission. [20] Data sheet - Delivery type description – General specification for 8” wafer on UV-tape with electronic fail die marking, BU-ID document number: 1093**1 [21] Data sheet - Flip chip strap - FCS2, General packing specification, BU-ID document number: 1738** [22] Application note - FAQ UCODE G2iL+, BU-ID document number: 1925** [23] Application note - UCODE G2iL+ Demoboard Manual, BU-ID document number: 1915** [24] Data sheet - SL3S1203_1213, UCODE G2iL and G2iL+, BU-ID document number: 1788** 1. ** ... document version number SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 17 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 17. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes SL3S1203_1213_SDS v.3.2 20101109 Product short data sheet - Modifications: SL3S1203_1213_SDS v.3.1 SL3S1203_1213_SDS Product short data sheet PUBLIC • • SL3S1203_1213_SDS v.3.1 Version SOT886F1 added Section 6 “Marking” and Section 14 “Packing information”: added 20101006 Product short data sheet - All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 - © NXP B.V. 2010. All rights reserved. 18 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 18. Legal information 18.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 18.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 18.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 19 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 18.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. UCODE — is a trademark of NXP B.V. 19. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 20 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 20. Tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Quick reference data . . . . . . . . . . . . . . . . . . . . .3 Ordering information . . . . . . . . . . . . . . . . . . . . . .3 Marking codes . . . . . . . . . . . . . . . . . . . . . . . . . .4 Pin description bare die . . . . . . . . . . . . . . . . . . .5 Pin description SOT886 . . . . . . . . . . . . . . . . . . .5 Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Overview of G2iL and G2iL+ features . . . . . . .10 G2iL memory sections . . . . . . . . . . . . . . . . . . .10 Limiting values[1][2] . . . . . . . . . . . . . . . . . . . . . . 11 G2iL, G2iL+ RF interface characteristics (RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Table 11. VDD pin characteristics . . . . . . . . . . . . . . . . . . 13 Table 12. G2iL, G2iL+ VDD and OUT pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 13 Table 13. G2iL, G2iL+ memory characteristics . . . . . . . . 14 Table 14. G2iL, G2iL+ RF interface characteristics (RFN, RFP) . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 15. Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 15 Table 16. Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 21. Figures Fig 1. Fig 2. Fig 3. Fig 4. Block diagram of G2iL IC . . . . . . . . . . . . . . . . . . .4 Pinning bare die . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Pin configuration for SOT886 . . . . . . . . . . . . . . . .5 G2iL wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . .6 SL3S1203_1213_SDS Product short data sheet PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 3.2 — 9 November 2010 198732 © NXP B.V. 2010. All rights reserved. 21 of 22 SL3S1203_1213 NXP Semiconductors UCODE G2iL and G2iL+ 22. Contents 1 2 2.1 2.1.1 2.2 2.2.1 2.2.2 2.2.3 2.3 3 3.1 3.2 4 5 6 7 8 8.1 9 9.1 10 10.1 10.1.1 10.1.2 10.1.3 11 11.1 11.2 11.3 11.3.1 11.3.2 11.4 11.5 11.6 12 13 13.1 13.2 14 14.1 14.2 15 16 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Key features . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Key benefits . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 End user benefit . . . . . . . . . . . . . . . . . . . . . . . . 2 Antenna design benefits . . . . . . . . . . . . . . . . . . 2 Label manufacturer benefit . . . . . . . . . . . . . . . . 2 Custom commands. . . . . . . . . . . . . . . . . . . . . . 2 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Markets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Quick reference data . . . . . . . . . . . . . . . . . . . . . 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Pinning information . . . . . . . . . . . . . . . . . . . . . . 5 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 5 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Wafer layout . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Mechanical specification . . . . . . . . . . . . . . . . . 7 Wafer specification . . . . . . . . . . . . . . . . . . . . . . 7 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Fail die identification . . . . . . . . . . . . . . . . . . . . 8 Map file distribution. . . . . . . . . . . . . . . . . . . . . . 8 Functional description . . . . . . . . . . . . . . . . . . . 9 Air interface standards . . . . . . . . . . . . . . . . . . . 9 Power transfer . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data transfer . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Reader to tag Link . . . . . . . . . . . . . . . . . . . . . . 9 Tag to reader Link . . . . . . . . . . . . . . . . . . . . . . . 9 G2iL and G2iL+ differences . . . . . . . . . . . . . . 10 Supported commands . . . . . . . . . . . . . . . . . . 10 G2iL, G2iL+ memory . . . . . . . . . . . . . . . . . . . 10 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 12 UCODE G2iL, G2iL+ bare die characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 12 UCODE G2iL, G2iL+ SOT886 characteristics. . . . . . . . . . . . . . . . . . . . . . . . . 14 Packing information . . . . . . . . . . . . . . . . . . . . 14 Wafer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 SOT886 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 15 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 17 18 18.1 18.2 18.3 18.4 19 20 21 22 Revision history . . . . . . . . . . . . . . . . . . . . . . . Legal information . . . . . . . . . . . . . . . . . . . . . . Data sheet status . . . . . . . . . . . . . . . . . . . . . . Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . Contact information . . . . . . . . . . . . . . . . . . . . Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 19 19 19 19 20 20 21 21 22 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 9 November 2010 198732