Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged FEATURES BYQ30EX series SYMBOL • Low forward volt drop • Fast switching • Soft recovery characteristic • Reverse surge capability • High thermal cycling performance • Isolated mounting tab QUICK REFERENCE DATA VR = 150 V/ 200 V VF ≤ 0.95 V a2 3 a1 1 IO(AV) = 16 A IRRM ≤ 0.2 A k 2 trr ≤ 25 ns GENERAL DESCRIPTION Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYQ30EX series is supplied in the conventional leaded SOT186A package. PINNING PIN SOT186A DESCRIPTION case 1 anode 1 2 cathode 3 anode 2 tab isolated 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. VRRM VRWM VR Peak repetitive reverse voltage Crest working reverse voltage Continuous reverse voltage - IO(AV) Average rectified output current (both diodes conducting)1 Repetitive peak forward current per diode Non-repetitive peak forward current per diode - 16 A - 16 A - 100 110 A A - 0.2 A - 0.2 A -40 - 150 150 ˚C ˚C BYQ30EX IFRM IFSM IRRM IRSM Tstg Tj square wave δ = 0.5; Ths ≤ 59 ˚C t = 25 µs; δ = 0.5; Ths ≤ 59 ˚C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) Repetitive peak reverse current tp = 2 µs; δ = 0.001 per diode Non-repetitive peak reverse tp = 100 µs current per diode Storage temperature Operating junction temperature MAX. -150 150 150 150 UNIT -200 200 200 200 V V V ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ MIN. MAX. UNIT - 8 kV 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EX series ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - 55 5.0 7.0 - K/W K/W K/W MIN. TYP. MAX. UNIT - 0.83 1.0 0.98 0.3 2 4 20 0.95 1.15 1.25 0.6 30 11 25 V V mA µA nC ns - 1.0 2 A - 1 - V THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Thermal resistance junction to heatsink Thermal resistance junction to ambient with heatsink compound without heatsink compound in free air Rth j-a ELECTRICAL CHARACTERISTICS characteristics are per diode at Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS VF Forward voltage IR Reverse current Qs trr Reverse recovery charge Reverse recovery time Irrm Peak reverse recovery current Vfr Forward recovery voltage IF = 8 A; Tj = 150˚C IF = 16 A; Tj = 150˚C IF = 16 A; VR = VRWM; Tj = 100 ˚C VR = VRWM IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs IF = 1 A; VR ≥ 30 V; -dIF/dt = 50 A/µs; Tj = 100 ˚C IF = 1 A; dIF/dt = 10 A/µs October 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged I dI F BYQ30EX series 12 F dt I R rr 100 1.9 8 6 120 4 4 130 2 140 100% 10% s 110 2.2 2.8 0 rrm Fig.1. Definition of trr, Qs and Irrm I 90 a = 1.57 time Q Ths(max) / C Vo = 0.75 V Rs 0.025 Ohms 10 t I Forward dissipation, PF (W) BYQ30 0 1 2 3 4 5 6 Average forward current, IF(AV) (A) 7 150 8 Fig.4. Maximum forward dissipation PF = f(IF(AV))per diode; sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). trr / ns F 1000 IF=10A 100 time IF=1A VF 10 V fr VF 1 1 10 dIF/dt (A/us) time Fig.2. Definition of Vfr 12 10 Fig.5. Maximum trr at Tj = 25 ˚C. Forward dissipation, PF (W) BYQ30 Ths(max) / C D = 1.0 Vo = 0.75 V Rs = 0.025 Ohms 110 0.2 0.1 6 tp D= 2 0 2 4 6 8 Average forward current, IF(AV) (A) tp T t T 0 IF=1A 10 130 10 140 150 12 1 Fig.3. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where IF(AV) =IF(RMS) x √D. October 1998 IF=10A 100 120 I 4 trr / ns 1000 80 90 0.5 8 100 1 10 dIF/dt (A/us) 100 Fig.6. Maximum trr at Tj = 100 ˚C. 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged 10 BYQ30EX series Irrm / A 100 Qs / nC IF=10A 5A 2A 1A IF=10A 1 IF=1A 10 0.1 1.0 0.01 10 -dIF/dt (A/us) 1 100 1.0 Fig.7. Maximum Irrm at Tj = 25 ˚C. 10 10 -dIF/dt (A/us) 100 Fig.10. Maximum Qs at Tj = 25 ˚C. Irrm / A 10 IF=10A Transient thermal impedance, Zth j-hs (K/W) 1 1 IF=1A 0.1 0.1 PD 0.01 0.001 1us 0.01 10 -dIF/dt (A/us) 1 100 Fig.8. Maximum Irrm at Tj = 100 ˚C. 20 Forward current, IF (A) tp D= T 10us tp T t 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) BYQ30EX Fig.11. Transient thermal impedance; Zth j-hs = f(tp). BYQ30 Tj = 25 C Tj = 150 C 15 10 typ max 5 0 0 0.5 1 1.5 Forward voltage, VF (V) 2 Fig.9. Typical and maximum forward characteristic IF = f(VF); parameter Tj October 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EX series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.12. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes ultrafast, rugged BYQ30EX series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1998 6 Rev 1.200