DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP63-05 Silicon PIN diode Objective specification 2000 Feb 17 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 PINNING FEATURES • High speed switching for RF signals PIN DESCRIPTION • Low diode capacitance 1 anode (a1) • Low diode forward resistance 2 anode (a2) • Low series inductance 3 common cathode • For applications up to 3 GHz. APPLICATIONS • RF attenuators and switches. book, 4 columns 2 1 DESCRIPTION 2 Two planar PIN diodes in common cathode configuration in a SOT23 small plastic SMD package. 1 3 3 MAM108 Top view Marking code: Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode − 50 V − 100 mA − 250 mW storage temperature −65 +150 °C junction temperature −65 +150 °C VR continuous reverse voltage IF continuous forward current Ptot total power dissipation Tstg Tj 2000 Feb 17 Ts = 90 °C 2 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Per diode VF forward voltage IR reverse current Cd diode capacitance IF = 100 mA 0.95 1.2 V VR = 35 V − 10 µA VR = 0; f = 100 MHz 0.3 − pF VR = 5 V; f = 1 MHz 0.21 0.3 pF 2 Ω rD diode forward resistance IF = 5 mA; f = 100 MHz; note 1 1.2 IF = 10 mA; f = 100 MHz; note 1 1 − Ω τL charge carrier life time when switched from IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR = 3 mA 75 − ns LS series inductance 1.4 − nH Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s 2000 Feb 17 PARAMETER thermal resistance from junction to soldering point 3 VALUE UNIT 220 K/W Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2000 Feb 17 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 99-09-13 TO-236AB 4 Philips Semiconductors Objective specification Silicon PIN diode BAP63-05 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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