DISCRETE SEMICONDUCTORS DATA SHEET age M3D049 1PS76SB21 Schottky barrier diode Product specification Supersedes data of 1998 Jul 16 1999 May 05 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 FEATURES DESCRIPTION • Ultra fast switching speed Planar Schottky barrier diode encapsulated in a SOD323 very small plastic SMD package. • Low forward voltage • Guard ring protected • Very small plastic SMD package. handbook, 4 columns APPLICATIONS k a • High-speed switching • Voltage clamping MAM283 • Protection circuits. Marking code: S1. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 40 V IF continuous forward current − 200 mA IFSM non-repetitive peak forward current − 1 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C 1999 May 05 tp < 10 ms 2 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage CONDITIONS MIN. MAX. UNIT see Fig.2 reverse current IF = 10 mA − 300 mV IF = 100 mA − 420 mV IF = 200 mA − 550 mV − 15 µA VR = 30 V; Tj = 100 °C; note 1; see Fig.3 − 3 mA f = 1 MHz; VR = 0; see Fig.4 50 pF VR = 30 V; note 1; see Fig.3 diode capacitance 40 Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD323 standard mounting conditions. 1999 May 05 3 VALUE UNIT 450 K/W Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 GRAPHICAL DATA MBK575 103 handbook, halfpage MBK576 1 handbook, halfpage IF (mA) IR (mA) 102 (1) 10−1 (1) (2) 10 (2) 10−2 (3) 1 (3) 10−1 150 250 350 450 VF (mV) 10−3 550 0 10 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Fig.3 Forward current as a function of forward voltage; typical values. MBK574 102 handbook, halfpage Cd (pF) 10 1 0 10 20 30 VR (V) 40 f = 1 MHz; Tj = 25 °C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1999 May 05 4 20 30 V (V) 40 R Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads A A1 , Q c Lp v M A HE A D 1 E bp 2 (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp mm 1.1 0.8 + 0.05 − 0.05 0.40 0.25 c D E HE Lp Q v 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOD323 1999 May 05 EUROPEAN PROJECTION ISSUE DATE 98-09-14 5 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 May 05 6 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB21 NOTES 1999 May 05 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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