74LVC1G38 2-input NAND gate; open drain Rev. 03 — 27 August 2007 Product data sheet 1. General description The 74LVC1G38 provides a 2-input NAND function. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of this device as translator in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features n n n n n n n n n n n n n Wide supply voltage range from 1.65 V to 5.5 V 5 V tolerant outputs for interfacing with 5 V logic High noise immunity Complies with JEDEC standard: u JESD8-7 (1.65 V to 1.95 V) u JESD8-5 (2.3 V to 2.7 V) u JESD8-B/JESD36 (2.7 V to 3.6 V). ESD protection: u HBM JESD22-A114E exceeds 2000 V u MM JESD22-A115-A exceeds 200 V ±24 mA output drive (VCC = 3.0 V) CMOS low power consumption Open drain outputs Latch-up performance exceeds 250 mA Direct interface with TTL levels Inputs accept voltages up to 5 V Multiple package options Specified from −40 °C to +125 °C. 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version 74LVC1G38GW −40 °C to +125 °C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.25 mm SOT353-1 74LVC1G38GV −40 °C to +125 °C SC-74A plastic surface-mounted package; 5 leads SOT753 74LVC1G38GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT886 6 terminals; body 1 × 1.45 × 0.5 mm 74LVC1G38GF −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; SOT891 6 terminals; body 1 × 1 × 0.5 mm 4. Marking Table 2. Marking Type number Marking code 74LVC1G38GW YB 74LVC1G38GV YB 74LVC1G38GM YB 74LVC1G38GF YB 5. Functional diagram Y 1 A 1 Y 4 2 B A & 4 2 001aab717 Fig 1. Logic symbol B Fig 2. IEC logic symbol 74LVC1G38_3 Product data sheet GND 001aab716 001aab715 Fig 3. Logic diagram © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 2 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 6. Pinning information 6.1 Pinning 74LVC1G38 74LVC1G38 A 1 B 2 GND 3 5 VCC A 1 6 VCC B 2 5 n.c. GND 4 4 3 Y 74LVC1G38 Y 1 6 VCC B 2 5 n.c. GND 3 4 Y 001aab832 001aaf180 Transparent top view Transparent top view 001aab718 Fig 4. Pin configuration SOT353-1 and SOT753 A Fig 5. Pin configuration SOT886 Fig 6. Pin configuration SOT891 6.2 Pin description Table 3. Pin description Symbol Pin Description SOT353-1/SOT753 SOT886/SOT891 A 1 1 data input B 2 2 data input GND 3 3 ground (0 V) Y 4 4 data output n.c. - 5 not connected VCC 5 6 supply voltage 7. Functional description Table 4. Function table[1] Input Output A B L L Z L H Z H L Z H H L [1] Y H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF state 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 3 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage Conditions IIK input clamping current VI input voltage IOK output clamping current [1] output voltage VO VI < 0 V Min Max Unit −0.5 +6.5 V −50 - mA −0.5 +6.5 V - ±50 mA Active mode [1][2] −0.5 +6.5 V Power-down mode [1][2] −0.5 +6.5 V - ±50 mA VO > VCC or VO < 0 V IO output current VO = 0 V to VCC ICC supply current - 100 mA IGND ground current −100 - mA Tstg storage temperature Ptot total power dissipation Tamb = −40 °C to +125 °C [3] −65 +150 °C - 300 mW [1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation. [3] For TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC Conditions Min Typ Max Unit supply voltage 1.65 - 5.5 V VI input voltage 0 - 5.5 V VO output voltage Active mode 0 - 5.5 V Disable mode; VCC = 1.65 V to 5.5 V 0 - 5.5 V Power-down mode; VCC = 0 V 0 - 5.5 V Tamb ambient temperature −40 - +125 °C ∆t/∆V input transition rise and VCC = 1.65 V to 2.7 V fall rate VCC = 2.7 V to 5.5 V - - 20 ns/V - - 10 ns/V 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 4 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 10. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Tamb = −40 °C to +85 VIH VIL VOL Conditions Min Typ Max Unit °C[1] HIGH-level input voltage LOW-level input voltage LOW-level output voltage VCC = 1.65 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.7 - - V VCC = 2.7 V to 3.6 V 2.0 - - V VCC = 4.5 V to 5.5 V 0.7 × VCC - - V VCC = 1.65 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 V VCC = 2.7 V to 3.6 V - - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3 × VCC V VI = VIH or VIL - - - IO = 100 µA; VCC = 1.65 V to 5.5 V - - 0.1 V IO = 4 mA; VCC = 1.65 V - - 0.45 V IO = 8 mA; VCC = 2.3 V - - 0.3 V IO = 12 mA; VCC = 2.7 V - - 0.4 V IO = 24 mA; VCC = 3.0 V - - 0.55 V IO = 32 mA; VCC = 4.5 V - - 0.55 V II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V - ±0.1 ±5 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V - ±0.1 ±10 µA IOFF power-off leakage current VI or VO = 5.5 V; VCC = 0 V - ±0.1 ±10 µA ICC supply current VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V; IO = 0 A - 0.1 10 µA ∆ICC additional supply current VI = VCC − 0.6 V; IO = 0 A; VCC = 2.3 V to 5.5 V; per pin - 5 500 µA CI input capacitance - 2.5 - pF Tamb = −40 °C to +125 °C VIH VIL HIGH-level input voltage LOW-level input voltage VCC = 1.65 V to 1.95 V 0.65 × VCC - - V VCC = 2.3 V to 2.7 V 1.7 - V VCC = 2.7 V to 3.6 V 2.0 - - V VCC = 4.5 V to 5.5 V 0.7 × VCC - - V VCC = 1.65 V to 1.95 V - - 0.35 × VCC V VCC = 2.3 V to 2.7 V - - 0.7 VCC = 2.7 V to 3.6 V - - 0.8 V VCC = 4.5 V to 5.5 V - - 0.3 × VCC V 74LVC1G38_3 Product data sheet - V © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 5 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max VOL VI = VIH or VIL - - - IO = 100 µA; VCC = 1.65 V to 5.5 V - - 0.1 V LOW-level output voltage Unit IO = 4 mA; VCC = 1.65 V - - 0.70 V IO = 8 mA; VCC = 2.3 V - - 0.45 V IO = 12 mA; VCC = 2.7 V - - 0.60 V IO = 24 mA; VCC = 3.0 V - - 0.80 V IO = 32 mA; VCC = 4.5 V - - 0.80 V II input leakage current VI = 5.5 V or GND; VCC = 0 V to 5.5 V - - ±100 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 5.5 V - - ±200 µA IOFF power-off leakage current VI or VO = 5.5 V; VCC = 0 V - - ±200 µA ICC supply current VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V; IO = 0 A - - 200 µA ∆ICC additional supply current VI = VCC − 0.6 V; IO = 0 A; VCC = 2.3 V to 5.5 V; per pin - - 5000 µA [1] All typical values are measured at VCC = 3.3 V and Tamb = 25 °C. 11. Dynamic characteristics Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 8. Symbol Parameter propagation delay tpd power dissipation capacitance CPD −40 °C to +85 °C Conditions −40 °C to +125 °C Min Max Min Max VCC = 1.65 V to 1.95 V 1.0 3.0 10.0 1.0 12.5 ns VCC = 2.3 V to 2.7 V 0.5 1.8 6.0 0.5 7.5 ns VCC = 2.7 V 0.5 2.5 5.0 0.5 6.5 ns VCC = 3.0 V to 3.6 V 0.5 2.3 4.5 0.5 5.7 ns VCC = 4.5 V to 5.5 V 0.5 1.5 3.9 0.5 4.9 ns - 6 - - - pF A, B to Y; see Figure 7 VCC = 3.3 V; VI = GND to VCC [2] [3] [1] Typical values are measured at Tamb = 25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPZL and tPLZ. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(CL × VCC2 × fo) = sum of outputs. 74LVC1G38_3 Product data sheet Unit Typ[1] © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 6 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 12. AC waveforms VI A, B input VM GND t PLZ t PZL VCC Y output VM VOL VX 001aab719 Measurement points are given in Table 9. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 7. The input (A, B) to output (Y) propagation delays. Table 9. Measurement points Supply voltage Input Output VCC VM VM VX 1.65 V to 1.95 V 0.5 × VCC 0.5 × VCC VOL + 0.15 V 2.3 V to 2.7 V 0.5 × VCC 0.5 × VCC VOL + 0.15 V 2.7 V 1.5 V 1.5 V VOL + 0.3 V 3.0 V to 3.6 V 1.5 V 1.5 V VOL + 0.3 V 4.5 V to 5.5 V 0.5 × VCC 0.5 × VCC VOL + 0.3 V 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 7 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain VEXT VCC VI RL VO G DUT RT CL RL mna616 Test data is given in Table 10. Definitions for test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. RT = Termination resistance should be equal to the output impedance Zo of the pulse generator. VEXT = External voltage for measuring switching times. Fig 8. Load circuitry for switching times Table 10. Test data Supply voltage Input Load VEXT VCC VI tr, tf CL RL tPLH, tPHL 1.65 V to 1.95 V VCC ≤ 2.0 ns 30 pF 1 kΩ open 2.3 V to 2.7 V VCC ≤ 2.0 ns 30 pF 500 Ω open 2.7 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 3.0 V to 3.6 V 2.7 V ≤ 2.5 ns 50 pF 500 Ω open 4.5 V to 5.5 V VCC ≤ 2.5 ns 50 pF 500 Ω open 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 8 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 13. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm E D SOT353-1 A X c y HE v M A Z 5 4 A2 A (A3) A1 θ 1 Lp 3 L e w M bp detail X e1 0 1.5 3 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D(1) E(1) e e1 HE L Lp v w y Z(1) θ mm 1.1 0.1 0 1.0 0.8 0.15 0.30 0.15 0.25 0.08 2.25 1.85 1.35 1.15 0.65 1.3 2.25 2.0 0.425 0.46 0.21 0.3 0.1 0.1 0.60 0.15 7° 0° Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT353-1 REFERENCES IEC JEDEC JEITA MO-203 SC-88A EUROPEAN PROJECTION ISSUE DATE 00-09-01 03-02-19 Fig 9. Package outline SOT353-1 (TSSOP5) 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 9 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain Plastic surface-mounted package; 5 leads SOT753 D E B y A X HE 5 v M A 4 Q A A1 c 1 2 3 Lp detail X bp e w M B 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.100 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT753 JEITA SC-74A EUROPEAN PROJECTION ISSUE DATE 02-04-16 06-03-16 Fig 10. Package outline SOT753 (SC-74A) 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 10 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× (2) L L1 e 6 5 4 e1 e1 6× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 1.5 1.4 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 MO-252 Fig 11. Package outline SOT886 (XSON6) 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 11 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1 x 0.5 mm 1 SOT891 b 3 2 4× (1) L L1 e 6 5 4 e1 e1 6× A (1) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 max b D E e e1 L L1 mm 0.5 0.04 0.20 0.12 1.05 0.95 1.05 0.95 0.55 0.35 0.35 0.27 0.40 0.32 Note 1. Can be visible in some manufacturing processes. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 05-04-06 07-05-15 SOT891 Fig 12. Package outline SOT891 (XSON6) 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 12 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 14. Abbreviations Table 11. Abbreviations Acronym Description CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 15. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes 74LVC1G38_3 20070827 Product data sheet - 74LVC1G38_2 Modifications: • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • • Legal texts have been adapted to the new company name where appropriate. In Section 10 “Static characteristics”, changed conditions for input leakage and supply current. Figure 12 “Package outline SOT891 (XSON6)” updated. 74LVC1G38_2 20060913 Product data sheet - 74LVC1G38_1 74LVC1G38_1 20041018 Product data sheet - - 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 13 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: [email protected] 74LVC1G38_3 Product data sheet © NXP B.V. 2007. All rights reserved. Rev. 03 — 27 August 2007 14 of 15 74LVC1G38 NXP Semiconductors 2-input NAND gate; open drain 18. Contents 1 2 3 4 5 6 6.1 6.2 7 8 9 10 11 12 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 6 AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 27 August 2007 Document identifier: 74LVC1G38_3