PHILIPS 74HC1G66

74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
Rev. 04 — 19 December 2008
Product data sheet
1. General description
74HC1G66 and 74HCT1G66 are high-speed Si-gate CMOS devices. They are single-pole
single-throw analog switches. The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off.
The non-standard output currents are equal to those of the 74HC4066 and 74HCT4066.
2. Features
n Wide supply voltage range from 2.0 V to 10.0 V for the 74HC1G66
n Very low ON resistance:
u 45 Ω (typ.) at VCC = 4.5 V
u 30 Ω (typ.) at VCC = 6.0 V
u 25 Ω (typ.) at VCC = 9.0 V
n High noise immunity
n Low power dissipation
n Multiple package options
n ESD protection:
u HBM JESD22-A114E exceeds 2000 V
u MM JESD22-A115-A exceeds 200 V
n Specified from −40 °C to +85 °C and −40 °C to +125 °C
3. Ordering information
Table 1.
Ordering information
Type number
74HC1G66GW
Package
Temperature range
Name
Description
Version
−40 °C to +125 °C
TSSOP5
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
SOT353-1
−40 °C to +125 °C
SC-74A
plastic surface-mounted package; 5 leads
SOT753
74HCT1G66GW
74HC1G66GV
74HCT1G66GV
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
4. Marking
Table 2.
Marking codes
Type number
Marking
74HC1G66GW
HL
74HCT1G66GW
TL
74HC1G66GV
H66
74HCT1G66GV
T66
5. Functional diagram
Y
E
Z
Z
Y
E
001aah372
001aag487
Fig 1. Logic symbol
Fig 2. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G66
74HCT1G66
Y
1
Z
2
GND
3
5
VCC
4
E
001aaf185
Fig 3.
Pin configuration SOT353-1 and SOT753
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
Y
1
independent input or output
Z
2
independent input or output
GND
3
ground (0 V)
E
4
enable input (active HIGH)
VCC
5
supply voltage
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
2 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
7. Functional description
Function table[1]
Table 4.
Input E
Switch
L
OFF
H
ON
[1]
H = HIGH voltage level; L = LOW voltage level.
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC
supply voltage
IIK
input clamping current
VI < −0.5 V or VI > VCC + 0.5 V
ISK
switch clamping current
VI < −0.5 V or VI > VCC + 0.5 V
ISW
switch current
VSW > −0.5 V or VSW < VCC + 0.5 V
-
±25
mA
ICC
supply current
-
50
mA
IGND
ground current
−50
-
mA
Tstg
storage temperature
−65
+150
°C
-
250
mW
total power dissipation
Ptot
Conditions
Tamb = −40 °C to +125 °C
Min
Max
Unit
−0.5
+11.0
V
[1]
-
±20
mA
[1]
-
±20
mA
[2]
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
For TSSOP5 and SC-74A packages: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).[1]
Symbol Parameter
74HC1G66
74HCT1G66
Unit
Min
Typ
Max
Min
Typ
Max
2.0
5.0
10.0
4.5
5.0
5.5
V
input voltage
0
-
VCC
0
-
VCC
V
switch voltage
0
-
VCC
0
-
VCC
V
VCC
supply voltage
VI
VSW
Tamb
ambient temperature
∆t/∆V
input transition rise
and fall rate
[1]
Conditions
−40
+25
+125
−40
+25
+125
VCC = 2.0 V
-
-
625
-
-
-
ns/V
°C
VCC = 4.5 V
-
1.67
139
-
1.67
139
ns/V
VCC = 6.0 V
-
-
83
-
-
-
ns/V
VCC = 10.0 V
-
-
35
-
-
-
ns/V
To avoid drawing VCC current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not
exceed 0.4 V. If the switch current flows into pin Z, no VCC current will flow out of terminal Y. In this case there is no limit for the voltage
drop across the switch, but the voltage at pins Y and Z may not exceed VCC or GND.
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
3 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
VCC = 2.0 V
1.5
1.2
-
1.5
-
V
VCC = 4.5 V
3.15
2.4
-
3.15
-
V
VCC = 6.0 V
4.2
3.2
-
4.2
-
V
74HC1G66
VIH
VIL
II
HIGH-level input
voltage
LOW-level input
voltage
input leakage
current
VCC = 9.0 V
6.3
4.7
-
6.3
-
V
VCC = 2.0 V
-
0.8
0.5
-
0.5
V
VCC = 4.5 V
-
2.1
1.35
-
1.35
V
VCC = 6.0 V
-
2.8
1.8
-
1.8
V
VCC = 9.0 V
-
4.3
2.7
-
2.7
V
VCC = 6.0 V
-
0.1
1.0
-
1.0
µA
VCC = 10.0 V
-
0.2
2.0
-
2.0
µA
E; VI = VCC or GND
IS(OFF)
OFF-state leakage
current
Y or Z; VCC = 10 V; see Figure 4
-
0.1
1.0
-
1.0
µA
IS(ON)
ON-state leakage
current
Y or Z; VCC = 10 V; see Figure 5
-
0.1
1.0
-
1.0
µA
ICC
supply current
E, Y or Z; VI = VCC or GND;
VSW = GND or VCC
VCC = 6.0 V
-
1.0
10
-
20
µA
VCC = 10.0 V
-
2.0
20
-
40
µA
CI
input capacitance
-
1.5
-
-
-
pF
CS(ON)
ON-state
capacitance
-
8
-
-
-
pF
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
4 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
74HCT1G66
VIH
HIGH-level input
voltage
VCC = 4.5 V to 5.5 V
2.0
1.6
-
2.0
-
V
VIL
LOW-level input
voltage
VCC = 4.5 V to 5.5 V
0.1
1.2
0.8
-
0.8
V
II
input leakage
current
E; VI = VCC or GND; VCC = 5.5 V
-
0.1
1.0
-
1.0
µA
IS(OFF)
OFF-state leakage
current
Y or Z; VCC = 5.5 V; see Figure 4
-
0.1
1.0
-
1.0
µA
IS(ON)
ON-state leakage
current
Y or Z; VCC = 5.5 V; see Figure 5
-
0.1
1.0
-
1.0
µA
ICC
supply current
E, Y or Z; VI = VCC or GND;
VSW = GND or VCC;
VCC = 4.5 V to 5.5 V
-
1
10
-
20
µA
∆ICC
additional supply
current
VI = VCC − 2.1 V; VCC = 4.5 V to 5.5 V;
IO = 0 A
-
-
500
-
850
µA
CI
input capacitance
-
1.5
-
-
-
pF
CS(ON)
ON-state
capacitance
-
8
-
-
-
pF
[1]
Typical values are measured at Tamb = 25 °C.
10.1 Test circuits
VCC
VCC
E
VIL
IS
VI
Z
Y
IS
IS
GND
VI
VO
001aag488
VI = VCC or GND and VO = GND or VCC.
Fig 4. Test circuit for measuring OFF-state
leakage current
Z
Y
GND
VO
001aag489
VI = VCC or GND and VO = open circuit.
Fig 5. Test circuit for measuring ON-state
leakage current
74HC_HCT1G66_4
Product data sheet
E
VIH
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
5 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
10.2 ON resistance
Table 8.
ON resistance
At recommended operating conditions; voltages are referenced to GND (ground 0 V); for graph see Figure 7.
Symbol
Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C
Unit
Min
Typ[2]
Max
Min
Max
ISW = 0.1 mA; VCC = 2.0 V
-
-
-
-
-
Ω
ISW = 1 mA; VCC = 4.5 V
-
42
118
-
142
Ω
ISW = 1 mA; VCC = 6.0 V
-
31
105
-
126
Ω
ISW = 1 mA; VCC = 9.0 V
-
23
88
-
105
Ω
ISW = 0.1 mA; VCC = 2.0 V
-
75
-
-
-
Ω
74HC1G66[1]
RON(peak) ON resistance
(peak)
RON(rail)
ON resistance (rail)
VI = GND to VCC; see Figure 6
VI = GND; see Figure 6
ISW = 1 mA; VCC = 4.5 V
-
29
95
-
115
Ω
ISW = 1 mA; VCC = 6.0 V
-
23
82
-
100
Ω
ISW = 1 mA; VCC = 9.0 V
-
18
70
-
80
Ω
VI = VCC; see Figure 6
ISW = 0.1 mA; VCC = 2.0 V
-
75
-
-
-
Ω
ISW = 1 mA; VCC = 4.5 V
-
35
106
-
128
Ω
ISW = 1 mA; VCC = 6.0 V
-
27
94
-
113
Ω
ISW = 1 mA; VCC = 9.0 V
-
21
78
-
95
Ω
-
42
118
-
142
Ω
-
29
95
-
115
Ω
-
35
106
-
128
Ω
74HCT1G66
RON(peak) ON resistance
(peak)
RON(rail)
ON resistance (rail)
VI = GND to VCC; see Figure 6
ISW = 1 mA; VCC = 4.5 V
VI = GND; see Figure 6
ISW = 1 mA; VCC = 4.5 V
VI = VCC; see Figure 6
ISW = 1 mA; VCC = 4.5 V
[1]
At supply voltages approaching 2 V, the ON resistance becomes extremely non-linear. Therefore it is recommended that these devices
be used to transmit digital signals only, when using this supply voltage.
[2]
Typical values are measured at Tamb = 25 °C.
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
6 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
10.3 ON resistance test circuit and graphs
mna081
80
RON
(Ω)
60
VSW
VCC = 4.5 V
40
VCC
E
VIH
6.0 V
9.0 V
Y
VI
20
Z
GND
ISW
0
0
2
4
6
8 V (V) 10
I
001aag490
Tamb = 25 °C.
RON = VSW / ISW.
Fig 6.
Test circuit for measuring ON resistance
Fig 7.
Typical ON resistance as a function of
input voltage
11. Dynamic characteristics
Table 9.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); CL = 50 pF; RL = 1 kΩ, unless otherwise specified;
For test circuit see Figure 10.
Symbol Parameter
−40 °C to +85 °C
Conditions
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
VCC = 2.0 V
-
8
75
-
90
ns
VCC = 4.5 V
-
3
15
-
18
ns
VCC = 6.0 V
-
2
13
-
15
ns
-
1
10
-
12
ns
VCC = 2.0 V
-
50
125
-
150
ns
VCC = 4.5 V
-
16
25
-
30
ns
VCC = 5.0 V; CL = 15 pF
-
11
-
-
-
ns
VCC = 6.0 V
-
13
21
-
26
ns
VCC = 9.0 V
-
9
16
-
20
ns
74HC1G66
tpd
propagation delay Y to Z or Z to Y; RL = ∞ Ω;
see Figure 8
[2]
VCC = 9.0 V
ten
enable time
E to Y or Z; see Figure 9
[2]
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
7 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
Table 9.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); CL = 50 pF; RL = 1 kΩ, unless otherwise specified;
For test circuit see Figure 10.
Symbol Parameter
tdis
CPD
disable time
−40 °C to +85 °C
Conditions
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
VCC = 2.0 V
-
27
190
-
225
ns
VCC = 4.5 V
-
16
38
-
45
ns
VCC = 5.0 V; CL = 15 pF
-
11
-
-
-
ns
VCC = 6.0 V
-
14
33
-
38
ns
VCC = 9.0 V
-
12
16
-
20
ns
-
9
-
-
-
pF
-
3
15
-
18
ns
-
15
30
-
36
ns
-
12
-
-
-
ns
E to Y or Z; see Figure 9
[2]
[3]
power dissipation VI = GND to VCC
capacitance
74HCT1G66
tpd
propagation delay Y to Z or Z to Y; RL = ∞ Ω;
see Figure 8
[2]
VCC = 4.5 V
ten
enable time
E to Y or Z; see Figure 9
[2]
VCC = 4.5 V
VCC = 5.0 V; CL = 15 pF
tdis
CPD
disable time
E to Y or Z; see Figure 9
[2]
VCC = 4.5 V
-
13
44
-
53
ns
VCC = 5.0 V; CL = 15 pF
-
12
-
-
-
ns
-
9
-
-
-
pF
power dissipation VI = GND to VCC − 1.5 V
capacitance
[1]
All typical values are measured at Tamb = 25 °C.
[2]
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
[3]
CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + Σ ((CL × CSW) × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
CSW = maximum switch capacitance in pF (see Table 7);
VCC = supply voltage in Volt;
Σ ((CL × CSW) × VCC2 × fo) = sum of outputs.
[3]
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
8 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
11.1 Waveforms and test circuit
VI
VM
Y or Z input
GND
t PLH
t PHL
VOH
VM
Z or Y output
VOL
mna667
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 8.
Input (Y or Z) to output (Z or Y) propagation delays
VI
E
VM
GND
t PZL
t PLZ
VCC
Y or Z
output
LOW-to-OFF
OFF-to-LOW
VM
VX
VOL
t PZH
t PHZ
Y or Z
output
HIGH-to-OFF
OFF-to-HIGH
VOH
VY
VM
GND
switch
enabled
switch
disabled
switch
enabled
mna668
Measurement points are given in Table 10.
Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 9.
Enable and disable times
Table 10.
Measurement points
Type
Input
Output
VM
VM
VX
VY
74HC1G66
0.5VCC
0.5VCC
VOL + 10%
VOH − 10%
74HCT1G66
1.3 V
1.3 V
VOL + 10%
VOH − 10%
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
9 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
VI
tW
90 %
negative
pulse
VM
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
0V
VM
10 %
VM
VM
10 %
tW
VCC
VCC
G
VI
VO
RL
S1
open
DUT
RT
CL
001aad983
Test data is given in Table 11.
Definitions for test circuit:
RT = Termination resistance should be equal to output impedance Zo of the pulse generator.
CL = Load capacitance including jig and probe capacitance.
RL = Load resistance.
S1 = Test selection switch.
Fig 10. Test circuit for measuring switching times
Table 11.
Test data
Type
Input
Load
S1 position
VI
tr, tf[1]
CL
RL
tPHL, tPLH
tPZH, tPHZ
tPZL, tPLZ
74HC1G66
GND to VCC
6 ns
50 pF, 15 pF
1 kΩ, ∞ Ω
open
GND
VCC
74HCT1G66
GND to 3 V
6 ns
50 pF, 15 pF
1 kΩ, ∞ Ω
open
GND
VCC
[1]
There is no constraint on tr, tf with a 50% duty factor when measuring fmax.
11.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics for 74HC1G66 and 74HCT1G66
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
Conditions
THD
fi = 1 kHz; RL = 10 kΩ; see Figure 11
total harmonic
distortion
Min
Typ
Max
Unit
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.04
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.02
-
%
VCC = 4.5 V; VI = 4.0 V (p-p)
-
0.12
-
%
VCC = 9.0 V; VI = 8.0 V (p-p)
-
0.06
-
%
%
fi = 10 kHz; RL = 10 kΩ; see Figure 11
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
10 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
Table 12. Additional dynamic characteristics for 74HC1G66 and 74HCT1G66 …continued
GND = 0 V; tr = tf = 6.0 ns; CL = 50 pF; unless otherwise specified. All typical values are measured at Tamb = 25 °C.
Symbol Parameter
f(−3dB)
αiso
Conditions
Min
Typ
Max
Unit
VCC = 4.5 V
-
180
-
MHz
VCC = 9.0 V
-
200
-
MHz
VCC = 4.5 V
-
−50
-
dB
VCC = 9.0 V
-
−50
-
dB
−3 dB frequency
response
RL = 50 Ω; CL = 10 pF; see Figure 12 and 13
isolation (OFF-state)
RL = 600 Ω; fi = 1 MHz; see Figure 14 and 15
11.3 Test circuits and graphs
VCC
VCC
E
VIH
2RL
10 µF
Y/Z
Z/Y
fi
VO
2RL
CL
D
001aai678
Fig 11. Test circuit for measuring total harmonic distortion
VCC
VCC
E
VIH
2RL
0.1 µF
fi
Y/Z
Z/Y
VO
2RL
CL
dB
001aai680
With fi = 1 MHz adjust the switch input voltage for a 0 dBm level at the switch output, (0 dBm = 1 mW into 50 Ω). Then Increase
the input frequency until the dB meter reads −3 dB
Fig 12. Test circuit for measuring the −3 dB frequency response
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
11 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
mna083
5
(dB)
0
−5
10
102
103
104
105
106
fi (kHz)
Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 Ω; RSOURCE = 1 kΩ.
Fig 13. Typical −3 dB frequency response
VCC
VCC
E
VIL
2RL
0.1 µF
Y/Z
fi
Z/Y
VO
CL
2RL
dB
001aai679
Adjust the switch input voltage for a 0 dBm level, (0 dBm = 1 mW into 600 Ω)
Fig 14. Test circuit for measuring isolation (OFF-state)
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
12 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
mna082
0
(dB)
−20
−40
−60
−80
−100
10
102
103
104
105
106
fi (kHz)
Test conditions: VCC = 4.5 V; GND = 0 V; RL = 50 Ω; RSOURCE = 1 kΩ.
Fig 15. Typical isolation (OFF-state) as a function of frequency
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
13 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
12. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
E
D
SOT353-1
A
X
c
y
HE
v M A
Z
5
4
A2
A
(A3)
A1
θ
1
Lp
3
L
e
w M
bp
detail X
e1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
e1
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.1
0
1.0
0.8
0.15
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
0.65
1.3
2.25
2.0
0.425
0.46
0.21
0.3
0.1
0.1
0.60
0.15
7°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT353-1
REFERENCES
IEC
JEDEC
JEITA
MO-203
SC-88A
EUROPEAN
PROJECTION
ISSUE DATE
00-09-01
03-02-19
Fig 16. Package outline SOT353-1 (TSSOP5)
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
14 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
Plastic surface-mounted package; 5 leads
SOT753
D
E
B
y
A
X
HE
5
v M A
4
Q
A
A1
c
1
2
3
Lp
detail X
bp
e
w M B
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.100
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
SOT753
JEITA
SC-74A
EUROPEAN
PROJECTION
ISSUE DATE
02-04-16
06-03-16
Fig 17. Package outline SOT753 (SC-74A)
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
15 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
13. Abbreviations
Table 13.
Abbreviations
Acronym
Description
CMOS
Complementary Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HBM
Human Body Model
MM
Machine Model
TTL
Transistor-Transistor Logic
DUT
Device Under Test
14. Revision history
Table 14.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
74HC_HCT1G66_4
20081219
Product data sheet
-
74HC_HCT1G66_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
•
•
•
Legal texts have been adapted to the new company name where appropriate.
Package SOT353 changed to SOT353-1 in Table 1 and Figure 16.
Quick Reference Data and Soldering sections removed.
Section 2 “Features” updated.
74HC_HCT1G66_3
20020515
Product specification
-
74HC_HCT1G66_2
74HC_HCT1G66_2
20010302
Product specification
-
74HC_HCT1G66_1
74HC_HCT1G66_1
19980803
Product specification
-
-
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
16 of 18
74HC1G66; 74HCT1G66
NXP Semiconductors
Single-pole single-throw analog switch
15. Legal information
15.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
15.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
15.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
15.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
16. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
74HC_HCT1G66_4
Product data sheet
© NXP B.V. 2008. All rights reserved.
Rev. 04 — 19 December 2008
17 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
17. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
10.1
10.2
10.3
11
11.1
11.2
11.3
12
13
14
15
15.1
15.2
15.3
15.4
16
17
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 1
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Recommended operating conditions. . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance test circuit and graphs. . . . . . . . 7
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Waveforms and test circuit . . . . . . . . . . . . . . . . 9
Additional dynamic characteristics . . . . . . . . . 10
Test circuits and graphs . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 19 December 2008
Document identifier: 74HC_HCT1G66_4