NX3L2T66 Dual low-ohmic single-pole single-throw analog switch Rev. 03 — 28 August 2009 Product data sheet 1. General description The NX3L2T66 provides two low-ohmic single pole single throw analog switch functions. Each switch has two input/output terminals (nY and nZ) and an active HIGH enable input (nE). When pin nE is LOW, the analog switch is turned off. Schmitt-trigger action at the enable input (nE) makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 1.4 V to 4.3 V. A low input voltage threshold allows pin nE to be driven by lower level logic signals without a significant increase in supply current ICC. This makes it possible for the NX3L2T66 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The NX3L2T66 allows signals with amplitude up to VCC to be transmitted from nY to nZ; or from nZ to nY. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals. 2. Features n Wide supply voltage range from 1.4 V to 4.3 V n Very low ON resistance (peak): u 1.6 Ω (typical) at VCC = 1.4 V u 1.0 Ω (typical) at VCC = 1.65 V u 0.55 Ω (typical) at VCC = 2.3 V u 0.50 Ω (typical) at VCC = 2.7 V u 0.50 Ω (typical) at VCC = 4.3 V n High noise immunity n ESD protection: u HBM JESD22-A114E Class 3A exceeds 7500 V u MM JESD22-A115-A exceeds 200 V u CDM AEC-Q100-011 revision B exceeds 1000 V n CMOS low-power consumption n Latch-up performance exceeds 100 mA per JESD 78 Class II Level A n 1.8 V control logic at VCC = 3.6 V n Control input accepts voltages above supply voltage n Very low supply current, even when input is below VCC n High current handling capability (350 mA continuous current under 3.3 V supply) n Specified from −40 °C to +85 °C and from −40 °C to +125 °C NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 3. Applications n Cell phone n PDA n Portable media player 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3L2T66GT −40 °C to +125 °C XSON8 plastic extremely thin small outline package; no leads; 8 terminals; body 1 × 1.95 × 0.5 mm SOT833-1 NX3L2T66GD −40 °C to +125 °C XSON8U plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 × 2 × 0.5 mm SOT996-2 NX3L2T66GM −40 °C to +125 °C XQFN8U plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm SOT902-1 5. Marking Table 2. Marking codes[1] Type number Marking code NX3L2T66GT DOO NX3L2T66GD DOO NX3L2T66GM DOO [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram 1Y 1Z 1E 2Z 2Y Y Z 2E E 001aag497 Fig 1. Logic symbol 001aah372 Fig 2. Logic diagram (one switch) NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 2 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 7. Pinning information 7.1 Pinning NX3L2T66 1Y 1 8 VCC 1Z 2 7 1E 2E 3 6 2Z GND 4 5 NX3L2T66 2Y 1Y 1 8 VCC 1Z 2 7 1E 2E 3 6 2Z GND 4 5 2Y 001aaj083 001aaj536 Transparent top view Fig 3. Transparent top view Pin configuration SOT833-1 (XSON8) Fig 4. Pin configuration SOT996-2 (XSON8U) NX3L2T66 1E 1 2Z 2Y 8 VCC terminal 1 index area 1Y 2 6 1Z 3 5 2E GND 4 7 001aaj084 Transparent top view Fig 5. Pin configuration SOT902-1 (XQFN8U) 7.2 Pin description Table 3. Symbol Pin description Pin Description SOT833-1 and SOT996-2 SOT902-1 1Y, 2Y 1, 5 7, 3 independent input or output 1Z, 2Z 2, 6 6, 2 independent input or output GND 4 4 ground (0 V) 1E, 2E 7, 3 1, 5 enable input (active HIGH) VCC 8 8 supply voltage NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 3 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 8. Functional description Table 4. Function table[1] Input nE Switch L OFF-state H ON-state [1] H = HIGH voltage level; L = LOW voltage level. 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC supply voltage VI input voltage VSW switch voltage Conditions enable input nE Min Max Unit −0.5 +4.6 V [1] −0.5 +4.6 V [2] −0.5 VCC + 0.5 V IIK input clamping current VI < −0.5 V −50 - mA ISK switch clamping current VI < −0.5 V or VI > VCC + 0.5 V - ±50 mA ISW switch current VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current - ±350 mA VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10% duty cycle; peak current - ±500 mA −65 +150 °C - 250 mW Tstg storage temperature total power dissipation Ptot Tamb = −40 °C to +125 °C [3] [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. [3] For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K. 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage VI input voltage VSW switch voltage Tamb ambient temperature ∆t/∆V input transition rise and fall rate Conditions enable input nE [1] VCC = 1.4 V to 4.3 V [2] Min Typ Max Unit 1.4 - 4.3 V 0 - 4.3 V 0 - VCC V −40 - +125 °C - - 200 ns/V [1] To avoid sinking GND current from terminal nZ when switch current flows in terminal nY, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current will flow from terminal nY. In this case, there is no limit for the voltage drop across the switch. [2] Applies to control signal levels. NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 4 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter VIH VIL Max Min VCC = 1.4 V to 1.6 V 0.9 - - 0.9 - - V VCC = 1.65 V to 1.95 V 0.9 - - 0.9 - - V VCC = 2.3 V to 2.7 V 1.1 - - 1.1 - - V VCC = 2.7 V to 3.6 V 1.3 - - 1.3 - - V VCC = 3.6 V to 4.3 V 1.4 - - 1.4 - - V VCC = 1.4 V to 1.6 V - - 0.3 - 0.3 0.3 V VCC = 1.65 V to 1.95 V - - 0.4 - 0.4 0.3 V VCC = 2.3 V to 2.7 V - - 0.4 - 0.4 0.4 V VCC = 2.7 V to 3.6 V - - 0.5 - 0.5 0.5 V VCC = 3.6 V to 4.3 V - - 0.6 - 0.6 0.6 V - - - - ±0.5 ±1 µA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA VCC = 1.4 V to 3.6 V - - ±5 - ±50 ±500 nA VCC = 3.6 V to 4.3 V - - ±10 - ±50 ±500 nA VCC = 3.6 V - - 100 - 690 6000 nA VCC = 4.3 V - - 150 - 800 7000 nA additional VSW = GND or VCC supply current VI = 2.6 V; VCC = 4.3 V - 2.0 4.0 - 7 7 µA VI = 2.6 V; VCC = 3.6 V - 0.35 0.7 - 1 1 µA VI = 1.8 V; VCC = 4.3 V - 7.0 10.0 - 15 15 µA VI = 1.8 V; VCC = 3.6 V - 2.5 4.0 - 5 5 µA VI = 1.8 V; VCC = 2.5 V - 50 200 - 300 500 nA HIGH-level input voltage LOW-level input voltage enable input nE; VI = GND to 4.3 V; VCC = 1.4 V to 4.3 V IS(OFF) OFF-state leakage current nY port; see Figure 6 ON-state leakage current nZ port; see Figure 7 ∆ICC Unit Typ input leakage current ICC −40 °C to +125 °C Min II IS(ON) 25 °C Conditions Max Max (85 °C) (125 °C) supply current VI = VCC or GND; VSW = GND or VCC CI input capacitance - 1.0 - - - - pF CS(OFF) OFF-state capacitance - 35 - - - - pF CS(ON) ON-state capacitance - 110 - - - - pF NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 5 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 11.1 Test circuits VCC VCC nE VIL nZ VI nE VIH nY IS IS GND nZ nY GND VI VO VO 001aaj221 001aaj222 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 6. Test circuit for measuring OFF-state leakage current VI = 0.3 V or VCC − 0.3 V; VO = open circuit. Fig 7. Test circuit for measuring ON-state leakage current 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15. Symbol Parameter −40 °C to +85 °C Conditions Min RON(peak) ON resistance (peak) Min Unit Max VCC = 1.4 V - 1.6 3.7 - 4.1 Ω VCC = 1.65 V - 1.0 1.6 - 1.7 Ω VCC = 2.3 V - 0.55 0.8 - 0.9 Ω VCC = 2.7 V - 0.5 0.75 - 0.9 Ω - 0.5 0.75 - 0.9 Ω VCC = 1.4 V - 0.04 0.3 - 0.3 Ω VCC = 1.65 V - 0.04 0.2 - 0.3 Ω VCC = 2.3 V - 0.02 0.08 - 0.1 Ω VCC = 2.7 V - 0.02 0.075 - 0.1 Ω VCC = 4.3 V - 0.02 0.075 - 0.1 Ω ON resistance mismatch VI = GND to VCC; between channels ISW = 100 mA [2] NX3L2T66_3 Product data sheet Max −40 °C to +125 °C VI = GND to VCC; ISW = 100 mA; see Figure 8 VCC = 4.3 V ∆RON Typ[1] © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 6 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch Table 8. ON resistance …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15. Symbol RON(flat) Parameter −40 °C to +85 °C Conditions −40 °C to +125 °C Unit Min Typ[1] Max Min Max VCC = 1.4 V - 1.0 3.3 - 3.6 Ω VCC = 1.65 V - 0.5 1.2 - 1.3 Ω VCC = 2.3 V - 0.15 0.3 - 0.35 Ω VCC = 2.7 V - 0.13 0.3 - 0.35 Ω VCC = 4.3 V - 0.2 0.4 - 0.45 Ω ON resistance (flatness) VI = GND to VCC; ISW = 100 mA [3] [1] Typical values are measured at Tamb = 25 °C. [2] Measured at identical VCC, temperature and input voltage. [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. 11.3 ON resistance test circuit and graphs 001aag564 1.6 RON (Ω) 1.2 VSW (1) 0.8 VCC (2) nE VIH (3) nZ VI nY GND (4) 0.4 (5) (6) ISW 0 0 1 2 RON = VSW / ISW. 3 4 5 VI (V) 001aaj223 (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. (6) VCC = 4.3 V. Measured at Tamb = 25 °C. Fig 8. Test circuit for measuring ON resistance Fig 9. Typical ON resistance as a function of input voltage NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 7 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 001aag565 1.6 001aag566 1.0 RON (Ω) RON (Ω) 0.8 1.2 (1) (2) (3) (4) 0.6 (1) (2) (3) (4) 0.8 0.4 0.4 0.2 0 0 0 1 2 3 0 1 2 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 10. ON resistance as a function of input voltage; VCC = 1.5 V 001aag567 1.0 3 VI (V) RON (Ω) Fig 11. ON resistance as a function of input voltage; VCC = 1.8 V 001aag568 1.0 RON (Ω) 0.8 0.8 0.6 0.6 (1) (2) (3) (4) 0.4 0.4 0.2 0.2 0 (1) (2) (3) (4) 0 0 1 2 3 0 VI (V) 2 3 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 12. ON resistance as a function of input voltage; VCC = 2.5 V Fig 13. ON resistance as a function of input voltage; VCC = 2.7 V NX3L2T66_3 Product data sheet 1 © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 8 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 001aag569 1.0 RON (Ω) 001aaj896 1.0 RON (Ω) 0.8 0.8 0.6 0.6 (1) (2) (3) (4) 0.4 (1) (2) (3) (4) 0.4 0.2 0.2 0 0 0 1 2 3 4 0 1 2 3 4 VI (V) 5 VI (V) (1) Tamb = 125 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (4) Tamb = −40 °C. Fig 14. ON resistance as a function of input voltage; VCC = 3.3 V Fig 15. ON resistance as a function of input voltage; VCC = 4.3 V 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 17. Symbol Parameter 25 °C Conditions Min enable time ten disable time tdis [1] Typ[1] −40 °C to +125 °C Max Min Max (85 °C) Unit Max (125 °C) nE to nZ or nY; see Figure 16 VCC = 1.4 V to 1.6 V - 35 49 - 53 57 ns VCC = 1.65 V to 1.95 V - 28 40 - 43 48 ns VCC = 2.3 V to 2.7 V - 20 30 - 32 35 ns VCC = 2.7 V to 3.6 V - 18 28 - 30 32 ns VCC = 3.6 V to 4.3 V - 18 28 - 30 32 ns VCC = 1.4 V to 1.6 V - 32 70 - 80 90 ns VCC = 1.65 V to 1.95 V - 23 55 - 60 65 ns VCC = 2.3 V to 2.7 V - 14 25 - 30 35 ns VCC = 2.7 V to 3.6 V - 11 20 - 25 30 ns VCC = 3.6 V to 4.3 V - 11 20 - 25 30 ns nE to nZ or nY; see Figure 16 Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 9 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 12.1 Waveform and test circuits VI nE input VM GND ten nY output OFF to HIGH HIGH to OFF tdis VOH VX VX GND switch disabled switch enabled switch disabled 001aah376 Measurement points are given in Table 10. Logic level: VOH is the typical output voltage level that occurs with the output load. Fig 16. Enable and disable times Table 10. Measurement points Supply voltage Input Output VCC VM VX 1.4 V to 4.3 V 0.5VCC 0.9VOH VCC nE nY/nZ G VI V VO RL nZ/nY CL VEXT = 1.5 V 001aaj224 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 17. Load circuit for measuring switching times Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 1.4 V to 4.3 V VCC ≤ 2.5 ns 35 pF 50 Ω NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 10 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns. 25 °C Symbol Parameter Conditions THD fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 18 total harmonic distortion Min Typ Max VCC = 1.4 V; VI = 1 V (p-p) - 0.15 - % VCC = 1.65 V; VI = 1.2 V (p-p) - 0.10 - % [1] VCC = 2.3 V; VI = 1.5 V (p-p) - 0.02 - % VCC = 2.7 V; VI = 2 V (p-p) - 0.02 - % - 0.02 - % - 60 - MHz - −90 - dB - 0.2 - V - 0.2 - V - −90 - dB VCC = 4.3 V; VI = 2 V (p-p) f(−3dB) −3 dB frequency response RL = 50 Ω; see Figure 19 αiso isolation (OFF-state) fi = 100 kHz; RL = 50 Ω; see Figure 20 [1] VCC = 1.4 V to 4.3 V [1] VCC = 1.4 V to 4.3 V crosstalk voltage Vct between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 21 VCC = 1.4 V to 3.6 V VCC = 3.6 V to 4.3 V Xtalk crosstalk [1] between switches; fi = 100 kHz; RL = 50 Ω; see Figure 22 VCC = 1.4 V to 4.3 V charge injection Qinj [1] Unit fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 23 VCC = 1.5 V - 3 - pC VCC = 1.8 V - 3 - pC VCC = 2.5 V - 3 - pC VCC = 3.3 V - 3 - pC VCC = 4.3 V - 6 - pC fi is biased at 0.5VCC. 12.3 Test circuits VCC 0.5VCC nE VIH nY/nZ RL nZ/nY D fi 001aaj225 Fig 18. Test circuit for measuring total harmonic distortion NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 11 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch VCC 0.5VCC nE VIH RL nY/nZ nZ/nY dB fi 001aaj226 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB. Fig 19. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC RL VCC VIL 0.5VCC nE nY/nZ RL nZ/nY dB fi 001aaj227 Adjust fi voltage to obtain 0 dBm level at input. Fig 20. Test circuit for measuring isolation (OFF-state) NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 12 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch VCC nE nY/nZ G VI nZ/nY RL RL 0.5VCC 0.5VCC CL V VO 001aaj228 a. Test circuit logic input (nE) off on off VO Vct 001aaj231 b. input and output pulse definitions Fig 21. Test circuit for measuring crosstalk voltage between digital inputs and switch 0.5VCC 1E VIH RL 1Y or 1Z fi 1Z or 1Y CHANNEL ON 50 Ω CL 50 pF V VO1 V VO2 0.5VCC 2E VIL RL 2Z or 2Y 2Y or 2Z Ri 50 Ω CHANNEL OFF CL 50 pF 001aah382 20 log10 (VO2 / VO1) or 20 log10 (VO1 / VO2). Fig 22. Test circuit for measuring crosstalk between switches NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 13 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch VCC nE nY/nZ G VI V VO RL nZ/nY Rgen CL Vgen GND 001aaj229 a. Test circuit logic input (nE) off on VO off VO 001aaj232 b. Input and output pulse definitions Definition: Qinj = ∆VO × CL. ∆VO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 23. Test circuit for measuring charge injection NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 14 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 13. Package outline XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm 1 2 SOT833-1 b 4 3 4× (2) L L1 e 8 7 6 e1 5 e1 e1 8× A (2) A1 D E terminal 1 index area 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A(1) max A1 max b D E e e1 L L1 mm 0.5 0.04 0.25 0.17 2.0 1.9 1.05 0.95 0.6 0.5 0.35 0.27 0.40 0.32 Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT833-1 --- MO-252 --- EUROPEAN PROJECTION ISSUE DATE 07-11-14 07-12-07 Fig 24. Package outline SOT833-1 (XSON8) NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 15 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm B D SOT996-2 A A E A1 detail X terminal 1 index area e1 v w b e L1 1 4 8 5 C C A B C M M y y1 C L2 L X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b D E e e1 L L1 L2 v w y y1 mm 0.5 0.05 0.00 0.35 0.15 2.1 1.9 3.1 2.9 0.5 1.5 0.5 0.3 0.15 0.05 0.6 0.4 0.1 0.05 0.05 0.1 REFERENCES OUTLINE VERSION IEC SOT996-2 --- JEDEC JEITA --- EUROPEAN PROJECTION ISSUE DATE 07-12-18 07-12-21 Fig 25. Package outline SOT996-2 (XSON8U) NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 16 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm B D SOT902-1 A terminal 1 index area E A A1 detail X L1 e e C ∅v M C A B ∅w M C L 4 y1 C y 5 3 metal area not for soldering e1 b 2 6 e1 7 1 terminal 1 index area 8 X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max A1 b D E e e1 L L1 v w y y1 mm 0.5 0.05 0.00 0.25 0.15 1.65 1.55 1.65 1.55 0.55 0.5 0.35 0.25 0.15 0.05 0.1 0.05 0.05 0.05 REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT902-1 --- MO-255 --- EUROPEAN PROJECTION ISSUE DATE 05-11-25 07-11-14 Fig 26. Package outline SOT902-1 (XQFN8U) NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 17 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3L2T66_3 20090828 Product data sheet - NX3L2T66_2 Modifications: • • Figure 6 “Test circuit for measuring OFF-state leakage current” updated. Table 8 “ON resistance”: RON(flat) values for VCC = 4.3 V updated. NX3L2T66_2 20090420 Product data sheet - NX3L2T66_1 NX3L2T66_1 20081204 Product data sheet - - NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 18 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] NX3L2T66_3 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 03 — 28 August 2009 19 of 20 NX3L2T66 NXP Semiconductors Dual low-ohmic single-pole single-throw analog switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance test circuit and graphs. . . . . . . . 7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Waveform and test circuits . . . . . . . . . . . . . . . 10 Additional dynamic characteristics . . . . . . . . . 11 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Legal information. . . . . . . . . . . . . . . . . . . . . . . 19 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information. . . . . . . . . . . . . . . . . . . . . 19 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 28 August 2009 Document identifier: NX3L2T66_3