LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION supply of 3.3V (nominal), with +26dBm of P1dB and up to 25dB power gain in the 5.15 - 5.85GHz frequency range with a simple output matching capacitor pair. LX5506B is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5506B an ideal solution for broadband, high-gain power amplifier requirements for IEEE 802.11a, and HiperLAN2 portable WLAN applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com PRODUCT HIGHLIGHT Advanced InGaP HBT Single-Polarity Voltage Supply EVM ~ 2.5% at Pout=+18dBm, 64QAM/ 54Mbps OFDM (3.3V) Power Gain ~ 25dB at 5.25GHz & Pout=+18dBm Power Gain ~ 21dB at 5.85GHz & Pout=+18dBm P1dB ~ +26dBm across 5.15 – 5.85 GHz Total Current ~ 170mA for Pout=+18dBm at 5.25GHz Total Current ~ 200mA for Pout=+20dBm at 5.25GHz ACPR ~ -48dBc at 30MHz Offset at Pout=+18dBm Integrated Power Detector Complete On-Chip Input Match Simple Output Capacitor Match Small Footprint: 3x3mm2 Low Profile: 0.9mm WWW . Microsemi .C OM The LX5506B is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.85 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, onchip input matching and output prematching. It also features an on-chip output power detector to help reduce BOM cost and PCB board space for system implementations. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage APPLICATIONS/BENEFITS FCC U-N11 Wireless IEEE 802.11a HiperLAN2 PACKAGE ORDER INFO LQ Plastic MLPQ 16-Pin RoHS Compliant / Pb-free LX5506B LX5506BLQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5506BLQ-TR) This device is classified as ESD Level 0 in accordance with MIL-STD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2003 Rev. 1.0b, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE PIN OUT WWW . Microsemi .C OM ABSOLUTE MAXIMUM RATINGS DC Supply Voltage, RF Off...............................................................................6V Collector Current ........................................................................................500mA Total Power Dissipation....................................................................................3W RF Input Power........................................................................................... 15dBm Thermal Resistance (Junction-to-Case, θJC).................................................6°C/W Maximum Junction Temperature (TJ max) .................................................. 150°C Operation Ambient Temperature .......................................................-40 to +85°C Storage Temperature.......................................................................... -65 to 150°C Package Peak Temp for Solder Reflow (40 Seconds Maximum Exposure). 260°C (+0, -5) Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. LQ PACKAGE (Bottom View) RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name Pin # Description RF IN 2, 3 RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VCC 4 Supply voltage for the bias reference and control circuits. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). VB1 VB2 VB3 5 6 7 Bias control voltage for the first stage. Bias control voltage for the second stage. Bias control voltage for the third stage. DET 9 Detector output for the third stage PA output power. RF OUT 10, 11 VC1 VC2 VC3 16 15 14 GND Center Metal The center metal base of the MLP package provides both DC/RF ground as well as heat sink for the power amplifier. NC 1, 8, 12,13 These pins are unused and not connected to the device inside the package. They can be treated either as open (floating) pins, or connected to ground metal. DC supply voltage for the first stage amplifier. DC supply voltage for the second stage amplifier. DC supply voltage for the third stage amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA Copyright © 2003 Rev. 1.0b, 2005-03-02 RF output for the power amplifier. This pin is DC-blocked from the collector of the output stage. LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET PARAMETER CONDITION SYMBOL MIN. f 5.15 Pout 25 Frequency Range Output Power at 1dB Compression Power Gain at Pout=+18dBm EVM at Pout=+18dBm Gp 64QAM/54Mbps Total Current at Pout=+18dBm Ic_total Quiescent Current TYP. 26 MAX. MIN. 5.35 5.7 25 TYP. MAX. 5.85 UNIT GHz 26 dBm dB 25 21 2.5 3 % 170 180 mA Icq 90 90 mA For Icq=90mA Iref 4.2 4.2 mA S21 24 20 dB Gain Flatness Over 200MHz ∆S21 +/-0.5 +/-0.5 dB Gain Variation Over Temperature -40 to +85 C ∆S21 S11 +/-1 +/-0.5 dB -15 -10 dB Bias Control Reference Current Small-Signal Gain o Input Return Loss Output Return Loss S22 -8 -10 dB Reverse Isolation S12 -40 -40 dB Second Harmonic Pout = +18dBm -40 -40 dBc Third Harmonic Pout = +18dBm -40 -40 dBc Detector Response Pout = +18dBm DET 1.6 2.2 V Ramp-On Time 10~90% tON 100 100 ns WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Vref=2.9V, Icq = 90mA, and TA = 25°C Note: All measured data was obtained on a 10 mil GETEK evaluation board. PACKAGE DIMENSIONS LQ 16-Pin MLPQ 3x3 (75 x 75 mil DAP) D b D2 E e K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.55 1.80 1.55 1.80 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.061 0.071 0.061 0.071 0.008 0.012 0.020 ELECTRICALS E2 Dim A A1 A3 b D E e D2 E2 K L A A1 Note: A3 Copyright © 2003 Rev. 1.0b, 2005-03-02 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET EVM & CURRENT VS POUT @ 5.25GHZ 8 210 7 190 7 190 6 170 6 170 5 150 5 150 4 130 4 130 3 110 3 110 2 90 2 90 70 1 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 70 6 Pout(dBm) 230 Ictotal(mA) 1 EVM(%) 8 210 250 EVM Ictotal 7 8 9 10 11 12 13 14 15 16 17 18 19 20 WWW . Microsemi .C OM 9 Ictotal(mA) 10 230 EVM Ictotal 9 EVM(%) EVM & CURRENT VS POUT @ 5.85GHZ 250 10 21 Pout(dBm) VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, 64QAM / 54 Mbps VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.85GHz, 64QAM / 54 Mbps Note: All EVM data are for OFDM signal of 64QAM/54Mbps from Yokogawa VG6000, and are actual measured data without any de-embedding. Source EVM is 1.4 - 1.8% for input power levels for test EVM & CURRENT VS FREQUENCY 5.0 EVM_Measured EVM_Deembedded Ictotal 4.5 185 4.0 180 3.5 175 3.0 170 2.5 165 2.0 160 1.5 155 Ictotal(mA) EVM(%) TYPICAL POWER SWEEP @ 5.25GHZ 190 150 1.0 6 8 10 12 13 15 17 19 21 Frequency (GHz) VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, CW Input TYPICAL POWER DETECT RESPONSE TYPICAL S-PARAMETER @ ROOM TEMP 2.5 2.4 2.3 2.2 2.1 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 dB(S(1,2)) dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) DET 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Frequency (GHz) Pout(dBm) VC = 3.3V, VREF = 2.9V, ICQ = 90mA, Frequency = 5.25GHz, 64QAM / 54 Mbps Copyright © 2003 Rev. 1.0b, 2005-03-02 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 VC = 3.3V, VREF = 2.9V, ICQ = 90mA Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 CHARTS Detector Output Voltage (V) VC = 3.3V, VREF = 2.9V, ICQ = 90mA, POUT = +18dBm, 64QAM / 54 Mbps LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET SMALL SIGNAL GAIN OVER TEMP SMALL SIGNAL VS SUPPLY VOLTAGE 25.4 25.2 24 S21 @ 5.25GHz 25.1 23 22 S21 (dB) S21 @ 5.25GHZ 25.3 25 21 20 19 25.0 24.9 24.8 24.7 24.6 24.5 24.4 18 +85°C +25°C -40°C 17 16 24.3 24.2 24.1 15 5.15 5.25 5.35 5.45 5.55 5.65 5.75 24.0 5.85 3 3.1 3.2 Frequency (GHz) 3.3 3.4 3.5 3.6 Supply Voltage Vc(V) VC = 3.3V, VREF = 2.9V, ICQ = 90mA @ Room Temperature VREF = 2.9V, ICQ = 90mA for Nominal VC =-3.3V SMALL SIGNAL VS. REF VOLTAGE QUESCENT CURRENT VS. REF VOLTAGE 30 170 160 S21 @ 5.25GHz 25 Icq 150 20 140 15 130 10 120 05 Icq (mA) S21 @ 5.25GHz WWW . Microsemi .C OM 25.5 00 -05 PA “ON” PA “OFF” ∆Icq ∆vref ~ 0.2mA mV 110 100 90 80 70 -10 60 -15 50 -20 40 -25 30 20 -30 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Vref (V) 10 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Vref (V) VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V VC = 3.3V, ICQ = 90mA for Nominal VREF = 2.9V CHARTS Copyright © 2003 Rev. 1.0b, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5506B ® TM InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET WWW . Microsemi .C OM TAPE AND REEL Tape And Reel Specification Ø 1.50mm 4.00mm Top View 1.75mm 3.30mm 5.5 ± 0.05mm 12.00 ± 0.3mm 3.30mm 8.00mm Ø 1.50mm Part Orientation 1.10mm Side View 0.30mm 2.2mm Ø 13mm +1.5 -0.2 10.6mm Ø 330mm ±0.5 Ø 97mm ±1.0 MECHANICALS 13mm +1.5 Copyright © 2003 Rev. 1.0b, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5506B TM ® InGaP HBT 4 – 6GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2003 Rev. 1.0b, 2005-03-02 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7