LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION Advanced InGaP HBT 5.15-5.85GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~100mA P1dB ~ +25dBm across 5.15~5.85GHz Power Gain ~ 22dB at 5.25GHz & Pout=18dBm Power Gain ~ 18dB at 5.85GHz & Pout=18dBm Total Current < 200mA for Pout=18dBm EVM ~ 4% for 64QAM/ 54Mbps & Pout=18dBm Excellent Temperature Performance Simple Input/Output Match Minimal External Components 2 Small Footprint: 3x3mm Low Profile: 0.9mm For +18dBm OFDM output power (64QAM, 54Mbps), the PA provides a very low EVM (Error-Vector Magnitude) of 4%, and consumes less than 200mA total DC current. The LX5503 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5503 an ideal solution for broadband, medium-gain power amplifier requirements for IEEE 802.11a, and Hiperlan2 portable WLAN applications. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com WWW . Microsemi .C OM The LX5503 is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band and HiperLAN2 applications in the 5.15-5.85GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output prematching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with +25dBm of P1dB and 22dB power gain between 5.15-5.35GHz and 18dB gain up to 5.85GHz. APPLICATIONS/BENEFITS FCC U-NII Wireless IEEE 802.11a HiperLAN2 PRODUCT HIGHLIGHT LX5503 PACKAGE ORDER INFO Plastic TJ (°C) LQ 16-Pin -40 to 85 LX5503-LQ Note: Available in Tape & Reel (3K parts per reel). Append the letter “T” to the part number. (i.e. LX5503-LQT) This device is classified as ESD Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT WWW . Microsemi .C OM DC Supply Voltage, RF off................................................................................6V Collector Current.........................................................................................500mA Total Power Dissipation...................................................................................3 W RF Input Power ...........................................................................................10dBm Operation Ambient Temperature ....................................................... -40 to +85oC Storage Temperature ........................................................................ -60 to +150oC 13 14 15 16 12 1 11 2 10 3 9 4 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. 8 7 6 5 LQ PACKAGE (Bottom View) FUNCTIONAL PIN DESCRIPTION Pin Name Description RF IN 2, 3 RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50Ω. Vb1 6 Vb2 7 Vcc 9 RF OUT 10, 11 Vc1 15 Vc2 14 GND Copyright 2000 Rev. 1.1, 9/16/2002 Bias current control voltage for the first stage. Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge(R1/R2). Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 1 µF bypass capacitor as close to the device as possible. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc). Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF bypass capacitor as close to the device as possible, followed by a 1 µF bypass capacitor at the supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply voltage (referred to as Vc). The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA Pin Number LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET Parameter Frequency Range Output Power at 1dB Compression Power Gain at Pout=18dBm EVM at Pout=18dBm Total Current at Pout=18dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Noise Figure Ramp-On Time Condition Symbol f Min. 5.15 Typ. Pout 24 Min. 5.7 Typ. 25 24 25 dBm Gp 20 16 Ic_total Icq Iref S21 ∆S21 22 4 200 100 1.6 21 +/-0.2 18 4 180 100 1.6 17 +/-0.5 dB % mA mA mA dB dB ∆S21 +/-1 +/-1 dB S11 S22 S12 -15 -9 -40 -45 -37 6 100 64QAM/54Mbps For Icq=100mA Over 100MHz o -40 to +85 C Pout = 18dBm Pout = 18dBm NF Max. 5.35 -10 10~90% tON Note: All measured data was obtained on a 5 mil GETEK evaluation board without heat sink. -12 -10 -40 -42 -37 6 100 Max. 5.85 -10 Unit GHz WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Test conditions: Vcc=3.3V, Vref=2.86V, Icq=100mA, TA=25°C. dB dB dB dBc dBc dB ns ELECTRICALS Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Typical Power Sweep Data at Room Temperature (Vc=3.3V, Vref=2.86V, Icq=100mA) 30 25 Pout Gain 20 15 Freq.=5.15GHz 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pin (dBm) 30 25 Pout Gain 20 15 Freq.=5.25GHz 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pin (dBm) 30 25 Pout Gain 20 15 Freq.=5.85GHz 10 CHARTS 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 Pin (dBm) Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Typical EVM & Total Current vs. Output Power (Vc=3.3V, Vref=2.86V, Icq=100mA, 64QAM/54Mbps) 8 300 EVM_in EVM_out Ictotal 7 6 250 5 4 200 Freq.=5.15GHz 3 2 150 1 0 100 12 13 14 15 16 17 18 19 20 21 Pout (dBm) 8 300 EVM_in EVM_out Ictotal 7 6 250 5 4 200 Freq.=5.25GHz 3 2 150 1 0 100 12 13 14 15 16 17 18 19 20 21 Pout (dBm) 8 300 7 EVM_in EVM_out Ictotal 6 250 5 4 200 Freq.=5.85GHz 3 2 150 1 CHARTS 0 100 9 10 11 12 13 14 15 16 17 18 19 20 Pout (dBm) Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Typical S-Parameter Data at Room Temperature 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Vc=3.3V Vref=2.81V Icq=80mA 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency, GHz 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Vc=3.3V Vref=2.86V Icq=100mA 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency, GHz 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 Vc=3.3V Vref=2.98V Icq=160mA 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 CHARTS 5.0 6.0 Frequency, GHz Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Quiescent Current vs. Vref (VC1=VC2=VCC=Vc=3.3V) 250 225 200 175 150 125 100 75 50 2.75 2.8 2.85 2.9 2.95 3 3.05 Vref (V) Power Down Isolation (Vc=3.3V, Vref=0 to 1V, Icq<2µA) 0 -10 -20 Vref=0V Vref=1V -30 -40 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (GHz) CHARTS Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Power, EVM & Current for Low Quiescent Current (Recommended for High Efficiency Operation) (Vc=3.3V, Vref=2.81V, Icq=80 mA, Freq.=5.25GHz) Power & Gain vs. Pout 30 Pout Gain 25 20 15 10 5 0 -5 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pin (dBm) EVM & Total Current vs. Pout 300 8 EVM_in EVM_out Ictotal 7 6 250 5 4 200 3 150 CHARTS 2 1 0 100 14 15 16 17 18 19 20 21 Pout (dBm) Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Power, EVM & Current for High Quiescent Current (Recommended for High Gain Operation) (Vc=3.3V, Vref=2.98V, Icq=160 mA, Freq.=5.25GHz) Power & Gain vs. Pout 30 Pout Gain 25 20 15 10 5 0 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pin (dBm) EVM & Total Current vs. Pout 8 300 EVM_in EVM_out Ictotal 7 6 250 5 4 200 3 2 150 CHARTS 1 0 100 13 14 15 16 17 18 19 20 Pout (dBm) Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM S-Parameter Variation Over Temperature (Vc=3.3V, Vref=2.98V, Icq=160mA at Room Temperature) 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 --40oC +25oC +85oC 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 Frequency (GHz) Power & Gain Variation Over Temperature (Vc=3.3V, Vref=2.86V, Icq=100mA at Room Temperature, Freq.=5.25GHz) 26 24 22 20 o -40 +25 o +85 o 18 16 14 12 Copyright 2000 Rev. 1.1, 9/16/2002 0 2 4 6 8 CHARTS 10 10 12 14 16 18 20 22 24 26 Pout (dBm) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 10 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET CHARTS WWW . Microsemi .C OM Small-Signal Gain vs. Supply Voltage (Vref=2.86V, Icq=100mA for Vc=3.3V) 22 21.5 21 20.5 20 3 3.1 3.2 3.3 3.4 3.5 3.6 Vc (V) P1dB vs. Supply Voltage (Vref=2.86V, Icq=100mA for Vc=3.3V) 27 26.5 26 25.5 25 24.5 CHARTS 24 3 3.3 3.6 Vc (V) Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 11 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET LQ WWW . Microsemi .C OM MECHANICAL DRAWING 16-Pin MLPQ Plastic (3x3mm EP) A F E B H G I Dim A B C D D1 E F G H I MILLIMETERS MIN MAX 3.00 BSC 3.00 BSC 0.80 1.00 0.18 0.30 0 0.05 1.30 1.55 0.18 0.30 0.50 BSC 1.30 1.55 0.30 0.50 INCHES MIN MAX 0.118 BSC 0.118 BSC 0.031 0.039 0.007 0.011 0 0.002 0.051 0.061 0.007 0.011 0.019 BSC 0.051 0.061 0.011 0.020 C D1 D Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 12 LX5503 I N T E G R A T E D InGaP HBT 5-6GHz Power Amplifier P R O D U C T S P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright 2000 Rev. 1.1, 9/16/2002 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 13 Signatu re Not Verified KD Digitally signed by KD DN: cn=KD, o=Microse mi, c=US Date: 2002.09.1 6 16:06:23 -07'00'