PHILIPS BYV10-600P

TO
-22
0
AC
BYV10-600P
Ultrafast power diode
30 August 2013
Product data sheet
1. General description
Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching
Low leakage current
Low forward voltage drop
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
High frequency switched-mode power supplies
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
Conditions
Min
Typ
Max
Unit
-
-
600
V
-
-
10
A
IF = 10 A; Tj = 150 °C; Fig. 6
-
-
1.6
V
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
-
35
50
ns
δ = 0.5 ; Tmb ≤ 109 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
Simplified outline
cathode
Graphic symbol
mb
K
A
001aaa020
2
A
anode
mb
mb
mounting base; connected to
cathode
1
2
TO-220AC (SOD59)
6. Ordering information
Table 3.
Ordering information
Type number
Package
BYV10-600P
Name
Description
Version
TO-220AC
plastic single-ended package; heatsink mounted; 1 mounting
hole; 2-lead TO-220AC
SOD59
7. Marking
Table 4.
Marking codes
Type number
Marking code
BYV10-600P
BYV10-600P
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VRRM
Conditions
Min
Max
Unit
repetitive peak reverse voltage
-
600
V
VRWM
crest working reverse voltage
-
600
V
VR
reverse voltage
DC
-
600
V
IF(AV)
average forward current
δ = 0.5 ; Tmb ≤ 109 °C; square-wave
-
10
A
-
20
A
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM
repetitive peak forward current
δ = 0.5 ; tp = 25 µs; Tmb ≤ 109 °C;
square-wave pulse
BYV10-600P
Product data sheet
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NXP Semiconductors
Ultrafast power diode
Symbol
Parameter
Conditions
Min
Max
Unit
IFSM
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
-
80
A
-
88
A
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Tstg
storage temperature
-65
175
°C
Tj
junction temperature
-
175
°C
aaa-008948
25
Ptot
(W)
aaa-008977
20
δ=1
a = 1.57
Ptot
(W)
20
0.5
1.9
2.2
15
2.8
0.2
15
4.0
0.1
10
10
5
5
0
Fig. 1.
0
5
10
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
aaa-008978
15
IF(AV)
(A)
109 °C
102
100
Product data sheet
7.5
IF(AV) (A)
10
aaa-008979
IF
10
10-5
150
200
Tmb (°C)
Forward current as a function of mounting base Fig. 4.
temperature; maximum values
BYV10-600P
5
IFSM
(A)
5
50
2.5
104
103
0
0
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
10
0
-50
Fig. 3.
IF(AV) (A)
0
15
t
tp
Tj(init) = 25 °C max
10-4
10-3
tp (s)
10-2
Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
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30 August 2013
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
-
3.5
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
-
60
-
K/W
aaa-008983
10
Zth(j-mb)
(K/W)
1
10-1
δ = 0.5
δ = 0.3
10-2
δ = 0.1
P
δ = 0.05
δ = 0.02
10-3
δ = 0.01
single pulse
10-4
10-6
Fig. 5.
δ=
10-5
10-4
10-3
tp
10-2
10-1
tp
T
t
T
1
10
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF = 10 A; Tj = 25 °C; Fig. 6
-
1.5
2
V
IF = 10 A; Tj = 150 °C; Fig. 6
-
-
1.6
V
VR = 600 V; Tj = 25 °C
-
-
10
µA
VR = 500 V; Tj = 150 °C
-
-
250
µA
IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
-
35
50
ns
-
40
-
ns
Static characteristics
VF
IR
forward voltage
reverse current
Dynamic characteristics
trr
reverse recovery time
Tj = 25 °C; Fig. 7
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
BYV10-600P
Product data sheet
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
aaa-008980
20
IF
IF
(A)
dlF
dt
15
trr
10
(1)
(2)
time
(3)
25 %
Qr
5
IR
0
Fig. 6.
100 %
IRM
003aac562
0
0.5
1
1.5
2
VF (V)
2.5
Fig. 7.
Reverse recovery definitions; ramp recovery
Forward current as a function of forward
voltage
BYV10-600P
Product data sheet
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
11. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
SOD59
E
A
A1
P
q
D1
D
H
Q
b1
L
1
2
c
b
e
0
5
Dimensions
Unit
mm
max
nom
min
10 mm
scale
A
A1
b
b1(1)
c
D
D1
E
4.7
1.40 0.95
1.7
0.65 15.8
6.8 10.30
4.3
1.15 0.70
1.3
0.45 15.6
6.4
9.65
e
H
5.08
(REF)
L
P
Q
q
16.25 15.0 3.80
2.6
2.9
15.70 12.5 3.65
2.2
2.7
Note
1. Protruded dambar are included in the dimension.
Outline
version
SOD59
Fig. 8.
sod059_po
References
IEC
JEDEC
JEITA
European
projection
Issue date
09-08-25
12-11-27
2-lead TO-220AC
Package outline TO-220AC (SOD59)
BYV10-600P
Product data sheet
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BYV10-600P
NXP Semiconductors
Ultrafast power diode
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
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The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
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12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
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or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
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source outside of NXP Semiconductors.
BYV10-600P
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
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whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
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provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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or other industrial or intellectual property rights.
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12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
BYV10-600P
Product data sheet
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13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 4
11
Package outline ..................................................... 6
12
12.1
12.2
12.3
12.4
Legal information ...................................................7
Data sheet status ................................................. 7
Definitions .............................................................7
Disclaimers ...........................................................7
Trademarks .......................................................... 8
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 30 August 2013
BYV10-600P
Product data sheet
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30 August 2013
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