PHILIPS BT139-800G

TO
-22
0A
B
BT139-800G
4Q Triac
Rev. 5 — 23 March 2011
Product data sheet
1. Product profile
1.1 General description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in
applications requiring high bidirectional transient and blocking voltage capability and high
thermal cycling performance. Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
1.2 Features and benefits
„ High blocking voltage capability
„ Least sensitive gate for highest noise
immunity
„ Planar passivated for voltage
ruggedness and reliability
„ Triggering in all four quadrants
1.3 Applications
„ General purpose motor control
„ General purpose switching
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VDRM
repetitive peak
off-state voltage
ITSM
non-repetitive
peak on-state
current
IT(RMS)
RMS on-state
current
Conditions
Min
Typ
Max Unit
-
-
800
V
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4;
see Figure 5
-
-
155
A
full sine wave; Tmb ≤ 99 °C;
see Figure 1; see Figure 2;
see Figure 3
-
-
16
A
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
-
5
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
-
8
50
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
-
10
50
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
-
22
100
mA
Static characteristics
IGT
gate trigger
current
BT139-800G
NXP Semiconductors
4Q Triac
2. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal
2
mb
Graphic symbol
T2
T1
G
sym051
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
BT139-800G
BT139-800G
Product data sheet
Package
Name
Description
Version
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
2 of 14
BT139-800G
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4Q Triac
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-state
current
Min
Max
Unit
-
800
V
full sine wave; Tmb ≤ 99 °C;
see Figure 1; see Figure 2; see Figure 3
-
16
A
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; see Figure 4; see Figure 5
-
155
A
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
-
170
A
I2t
I2t for fusing
tp = 10 ms; sine-wave pulse
-
120
A2s
dIT/dt
rate of rise of on-state current
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G+
-
50
A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2+ G-
-
50
A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G-
-
50
A/µs
IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
T2- G+
-
10
A/µs
IGM
peak gate current
-
2
A
VGM
peak gate voltage
-
5
V
PGM
peak gate power
-
5
W
PG(AV)
average gate power
-
0.5
W
Tstg
storage temperature
-40
150
°C
Tj
junction temperature
-
125
°C
BT139-800G
Product data sheet
over any 20 ms period
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
3 of 14
BT139-800G
NXP Semiconductors
4Q Triac
001aab090
50
001aab091
20
IT(RMS)
(A)
40
IT(RMS)
(A)
(1)
15
30
10
20
5
10
0
10−2
Fig 1.
10−1
0
−50
1
10
surge duration (s)
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
0
50
100
150
Tmb (°C)
RMS on-state current as a function of mounting
base temperature; maximum values
001aab093
25
Ptot
(W)
20
95
Tmb(max)
(°C)
α=
180
101
120
90
15
107
60
30
10
α
119
α
5
125
20
0
0
5
10
113
15
IT(RMS) (A)
Fig 3.
Total power dissipation as a function of RMS on-state current; maximum values.
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
4 of 14
BT139-800G
NXP Semiconductors
4Q Triac
001aab102
160
ITSM
(A)
IT
ITSM
120
T
t
Tj(initial) = 25 °C max
80
40
0
102
10
1
103
n
Fig 4.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
001aab092
103
ITSM
(A)
102
(1)
IT
(2)
ITSM
T
t
Tj(initial) = 25 °C max
10
10−2
10−1
1
102
10
T (ms)
Fig 5.
Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
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4Q Triac
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance from
junction to mounting base
half cycle; see Figure 6
-
-
1.7
K/W
full cycle; see Figure 6
-
-
1.2
K/W
in free air
-
60
-
K/W
thermal resistance from
junction to ambient
Rth(j-a)
001aab098
10
Zth(j-mb)
(K/W)
(1)
1
(2)
10−1
PD
10−2
t
tp
10−3
10−5
10−4
10−3
10−2
10−1
1
10
tp (s)
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
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4Q Triac
6. Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 7
-
5
50
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 7
-
8
50
mA
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 7
-
10
50
mA
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 7
-
22
100
mA
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; see Figure 8
-
7
60
mA
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; see Figure 8
-
20
90
mA
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; see Figure 8
-
8
60
mA
VD = 12 V; IG = 0.1 A; T2- G+;
Tj = 25 °C; see Figure 8
-
10
90
mA
Static characteristics
IGT
IL
gate trigger current
latching current
IH
holding current
VD = 12 V; Tj = 25 °C; see Figure 9
-
6
60
mA
VT
on-state voltage
IT = 20 A; Tj = 25 °C; see Figure 10
-
1.2
1.6
V
VGT
gate trigger voltage
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
see Figure 11
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
see Figure 11
0.25
0.4
-
V
VD = 800 V; Tj = 125 °C
-
0.1
0.5
mA
ID
off-state current
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 125 °C; exponential
waveform; gate open circuit
200
250
-
V/µs
dVcom/dt
rate of change of
commutating voltage
VD = 400 V; Tj = 95 °C;
dIcom/dt = 7.2 A/ms; IT = 16 A;
gate open circuit
10
20
-
V/µs
tgt
gate-controlled turn-on ITM = 20 A; VD = 800 V; IG = 0.1 A;
time
dIG/dt = 5 A/µs
-
2
-
µs
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
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BT139-800G
NXP Semiconductors
4Q Triac
001aab448
3
IGT (Tj)
IGT(25°C)
001aab100
3
IL
IL(25°C)
(1)
(2)
2
2
(3)
(4)
1
1
0
−50
Fig 7.
0
50
100
0
−50
150
Tj (°C)
Normalized gate trigger current as a function of
junction temperature
001aab099
3
Fig 8.
0
50
IH(25°C)
150
Tj (°C)
Normalized latching current as a function of
junction temperature
001aab094
50
IT
(A)
40
IH
100
(1)
(2)
(3)
2
30
20
1
10
0
−50
Fig 9.
0
0
50
100
150
Product data sheet
1
2
3
VT (V)
Normalized holding current as a function of
junction temperature
BT139-800G
0
Tj (°C)
Fig 10. On-state current as a function of on-state
voltage
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
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BT139-800G
NXP Semiconductors
4Q Triac
001aab101
1.6
VGT
VGT(25°C)
1.2
0.8
0.4
−50
0
50
100
150
Tj (°C)
Fig 11. Normalized gate trigger voltage as a function of junction temperature
BT139-800G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
9 of 14
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4Q Triac
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
A
A1
p
q
mounting
base
D1
D
L1(1)
L2(1)
Q
L
b1(2)
(3×)
b2(2)
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1(2)
b2(2)
c
D
D1
E
e
L
L1(1)
L2(1)
max.
p
q
Q
mm
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
2.54
15.0
12.8
3.30
2.79
3.0
3.8
3.5
3.0
2.7
2.6
2.2
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
08-04-23
08-06-13
Fig 12. Package outline SOT78 (TO-220AB)
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
10 of 14
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4Q Triac
8. Revision history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BT139-800G v.5
20110323
Product data sheet
-
BT139_SERIES_4
Modifications:
BT139_SERIES_4
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
•
Legal texts have been adapted to the new company name where appropriate.
Type number BT139-800G separated from data sheet BT139_SERIES_4.
20040706
Product data sheet
-
BT139_SERIES_3
(9397 750 13358)
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
11 of 14
BT139-800G
NXP Semiconductors
4Q Triac
9. Legal information
9.1
Data sheet status
Document status [1] [2]
Product status [3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term 'short data sheet' is explained in section "Definitions".
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
9.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
9.3
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
BT139-800G
Product data sheet
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Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
12 of 14
BT139-800G
NXP Semiconductors
4Q Triac
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
9.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BT139-800G
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 23 March 2011
© NXP B.V. 2011. All rights reserved.
13 of 14
BT139-800G
NXP Semiconductors
4Q Triac
11. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
9.1
9.2
9.3
9.4
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits . . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
Pinning information . . . . . . . . . . . . . . . . . . . . . . .2
Ordering information . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .6
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 23 March 2011
Document identifier: BT139-800G