TO - 92 Z0103NA0 4Q Triac Rev. 02 — 21 March 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated very sensitive gate four quadrant triac in a SOT54 (TO-92) plastic package intended for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and low power gate drivers. 1.2 Features and benefits Enhanced current surge capability Planar passivated for voltage ruggedness and reliability Enhanced noise immunity Triggering in all four quadrants High blocking voltage capability Very sensitive gate in four quadrants Direct interfacing to logic level ICs 1.3 Applications General purpose low power motor control Industrial process control Low power AC Fan controllers Home appliances 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak off-state voltage ITSM non-repetitive peak on-state current IT(RMS) RMS on-state current Conditions Min Typ Max Unit - - 800 full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - - 12.5 A full sine wave; Tlead ≤ 45 °C; see Figure 1; see Figure 3; see Figure 2 - - 1 V A Z0103NA0 NXP Semiconductors 4Q Triac Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 0.2 - 5 mA Static characteristics IGT gate trigger current 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 2 G gate T2 3 T1 main terminal 1 sym051 T1 G 321 SOT54 (TO-92) 3. Ordering information Table 3. Ordering information Type number Z0103NA0 Z0103NA0 Product data sheet Package Name Description Version TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on-state current I2t I2t dIT/dt rate of rise of on-state current for fusing Min Max Unit - 800 V full sine wave; Tlead ≤ 45 °C; see Figure 1; see Figure 3; see Figure 2 - 1 A full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - 12.5 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 13.8 A tp = 10 ms; sine-wave pulse - 0.78 A 2s IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G+ - 50 A/µs IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2+ G- - 50 A/µs IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G- - 50 A/µs IT = 1 A; IG = 20 mA; dIG/dt = 100 mA/µs; T2- G+ - 20 A/µs IGM peak gate current - 1 A PGM peak gate power - 2 W PG(AV) average gate power - 0.1 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aac264 1.2 003a a f977 16 I T(RMS) I T(RMS ) (A) (A) 12 0.8 8 0.4 4 0 -50 Fig 1. 0 50 RMS on-state current as a function of lead temperature; maximum values Z0103NA0 Product data sheet 0 10-2 100 150 T lead (°C) Fig 2. 10-1 1 10 surge duration (s) RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 003aac259 2.0 Ptot (W) 1.6 1.2 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a = 180° Ω 120° 90° 60° 0.8 30° 0.4 0.0 0 Fig 3. 0.2 0.4 0.6 0.8 1 1.2 I T(RMS ) (A) Total power dissipation as a function of RMS on-state current; maximum values 003aaf449 16 ITSM (A) 12 8 ITSM IT 4 t 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 003aaf490 103 ITSM IT ITSM (A) t tp Tj(init) = 25 °C max 102 (1) (2) 10 1 10−5 Fig 5. 10−4 10−3 10−2 tp (s) 10−1 Non-repetitive peak on-state current as a function of pulse width; maximum values Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance from junction to lead full cycle; see Figure 6 - - 60 K/W Rth(j-a) thermal resistance from junction to ambient full cycle; printed circuit board mounted; lead length 4 mm - 150 - K/W 003aac206 102 Zth(j-lead) (K/W) 10 1 P 10-1 tp 10-2 10-5 Fig 6. 10-4 10-3 10-2 10-1 1 tp (s) t 10 Transient thermal impedance from junction to lead as a function of pulse width Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 0.2 - 3 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 0.2 - 5 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 - - 7 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 - - 20 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 - - 7 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; see Figure 8 - - 7 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 °C; see Figure 9 - - 7 mA VT on-state voltage IT = 1 A; Tj = 25 °C; see Figure 10 - 1.3 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 - - 1.3 V VD = 800 V; IT = 0.1 A; Tj = 125 °C; see Figure 11 0.2 - - V VD = 800 V; Tj = 125 °C - - 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 110 °C; gate open circuit; exponential waveform; see Figure 12 80 - - V/µs dVcom/dt rate of change of commutating voltage VD = 400 V; Tj = 110 °C; dIcom/dt = 0.44 A/ms; gate open circuit 0.5 - - V/µs Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 003aaa205 4 003aaa203 3 IGT IL IGT(25°C) IL(25°C) 3 (1) (2) 2 (3) (4) 2 1 1 0 -50 0 50 100 0 -50 150 0 50 100 150 Tj (°C) Tj (°C) (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig 7. Normalized gate trigger current as a function of junction temperature Fig 8. Normalized latching current as a function of junction temperature 003aaa204 3 003aac258 2 IT (A) IH IH(25°C) 1.6 2 1.2 0.8 (1) 1 (2) (3) 0.4 0 -50 0 0 50 100 150 0 0.4 0.8 1.2 1.6 Tj (°C) VT (V) 2 Vo = 1.13 V Rs = 0.31 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. Normalized holding current as a function of junction temperature Z0103NA0 Product data sheet Fig 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 003aaa209 1.6 003aaa208 1.6 VGT A VGT(25°C) 1.2 1.2 0.8 0.8 0.4 0.4 0 -50 0 0 50 100 150 0 Fig 11. Normalized gate trigger voltage as a function of junction temperature Z0103NA0 Product data sheet 50 100 150 Tj (°C) Tj (°C) Fig 12. Normalized critical rate of rise of off-state voltage as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 7. Package outline Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC SOT54 JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Fig 13. Package outline SOT54 (TO-92) Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes Z0103NA0 v.2 20110321 Product data sheet - Z0103NA0 v.1 - - Modifications: Z0103NA0 v.1 Z0103NA0 Product data sheet • Various changes to content. 20110103 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 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In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Z0103NA0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 March 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 Z0103NA0 NXP Semiconductors 4Q Triac 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 March 2011 Document identifier: Z0103NA0