20F TO -2 BTA316X-800B0 3Q Hi-Com Triac Rev. 2 — 17 November 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 1.2 Features and benefits 3Q technology for improved noise immunity Least sensitive gate for highest noise immunity High immunity to false turn-on by dV/dt Planar passivated for voltage ruggedness and reliability High minimum IGT for guaranteed immunity to gate noise High voltage capability Isolated mounting base package 1.3 Applications Electronic thermostats High power motor controls - e.g. washing machines and vacuum cleaners Rectifier-fed DC inductive loads e.g. DC motors and solenoids Refrigeration and air conditioning compressors Triggering in three quadrants only Very high commutation capability with maximum false trigger immunity BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak off-state voltage ITSM non-repetitive peak on-state current IT(RMS) RMS on-state current Min Typ Max Unit - - 800 V full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - - 140 A full sine wave; Th ≤ 45 °C; see Figure 1; see Figure 2; see Figure 3 - - 16 A VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 10 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 10 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 10 - 50 mA Static characteristics gate trigger current IGT 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated mb Graphic symbol T2 T1 G sym051 1 2 3 SOT186A (TO-220F) 3. Ordering information Table 3. Ordering information Type number BTA316X-800B0 BTA316X-800B0 Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM repetitive peak off-state voltage - 800 V IT(RMS) RMS on-state current full sine wave; Th ≤ 45 °C; see Figure 1; see Figure 2; see Figure 3 - 16 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - 140 A I2t I2t full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 150 A tp = 10 ms; sine-wave pulse - 98 A2s dIT/dt rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C for fusing over any 20 ms period 003aab669 120 IT(RMS) (A) 100 003aab667 20 IT(RMS) (A) 16 80 12 60 8 40 4 20 0 10-2 10-1 0 -50 1 10 surge duration (s) 0 50 100 Th (°C) 150 f = 50 Hz; Th = 45 °C Fig 1. RMS on-state current as a function of surge duration; maximum values BTA316X-800B0 Product data sheet Fig 2. RMS on-state current as a function of heatsink temperature; maximum values All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 003aab689 20 Ptot (W) 15 conduction angle, (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 α = 180° 120° 90° α 60° 30° 10 5 0 0 Fig 3. 2 4 6 8 10 12 14 IT(RMS) (A) 16 Total power dissipation as a function of RMS on-state current; maximum values 003aab668 160 ITSM (A) 120 80 ITSM IT 40 t 1/f Tj(init) = 25 °C max 0 1 102 10 103 number of cycles (n) Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 003aab671 103 ITSM (A) (1) 102 ITSM IT t tp Tj(init) = 25 °C max 10 10-5 Fig 5. 10-4 10-3 10-2 tp (s) 10-1 Non-repetitive peak on-state current as a function of pulse duration; maximum values BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; see Figure 6 - - 4 K/W full cycle or half cycle; without heatsink compound; see Figure 6 - - 5.5 K/W in free air - 55 - K/W Rth(j-a) thermal resistance from junction to ambient 003aab672 10 Zth(j-h) (K/W) (1) (2) 1 (3) (4) 10-1 P 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all three terminals to external heatsink; sinusoidal waveform; clean and dust free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 7. Characteristics Table 7. Symbol Characteristics Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 10 - 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 10 - 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 10 - 50 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 - - 60 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 - - 90 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 - - 60 mA VD = 12 V; Tj = 25 °C; see Figure 9 - - 60 mA Static characteristics IGT IL gate trigger current latching current IH holding current VT on-state voltage IT = 18 A; Tj = 25 °C; see Figure 10 - 1.3 1.5 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 - 0.8 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C; see Figure 11 0.25 0.4 - V VD = 800 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; exponential waveform; gate open circuit 2500 - - V/µs dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit 20 - - A/ms BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 001aac669 3 001aab100 3 (1) IGT IL IGT(25°C) IL(25°C) 2 2 (2) (3) 1 1 0 −50 0 50 100 0 −50 150 Tj (°C) 0 50 100 150 Tj (°C) (1) T2- G(2) T2+ G(3) T2+ G+ Fig 7. Normalized gate trigger current as a function of junction temperature 001aab099 3 Fig 8. Normalized latching current as a function of junction temperature 003aab666 50 IT (A) IH IH(25°C) 40 2 30 (1) (2) (3) 20 1 10 0 −50 0 0 50 100 150 0 0.5 1 1.5 Tj (°C) VT (V) 2 Vo = 1.024 V Rs = 0.021 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig 9. Normalized holding current as a function of junction temperature BTA316X-800B0 Product data sheet Fig 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 001aab101 1.6 VGT VGT(25°C) 1.2 0.8 0.4 −50 0 50 100 150 Tj (°C) Fig 11. Normalized gate trigger voltage as a function of junction temperature BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A A1 P q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b c w M e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are ∅ 2.5 × 0.8 max. depth OUTLINE VERSION SOT186A REFERENCES IEC JEDEC JEITA 3-lead TO-220F EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 Fig 12. Package outline SOT186A (TO-220F) BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 9. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes BTA316X-800B0 v.2 20111117 Product data sheet - BTA316X-800B0 v.1 - - Modifications: BTA316X-800B0 v.1 BTA316X-800B0 Product data sheet • Various changes to content. 20101112 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 10. Legal information 10.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 10.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 10.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. BTA316X-800B0 Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 10.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 11. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BTA316X-800B0 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 17 November 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 BTA316X-800B0 NXP Semiconductors 3Q Hi-Com Triac 12. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 10.1 10.2 10.3 10.4 11 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Isolation characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 17 November 2011 Document identifier: BTA316X-800B0