TO -22 0A B BT139-600E 4Q Triac Rev. 04 — 24 February 2011 Product data sheet 1. Product profile 1.1 General description Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.2 Features and benefits High blocking voltage capability Sensitive gate High noise immunity Triggering in all four quadrants Planar passivated for voltage ruggedness and reliability 1.3 Applications General purpose motor control General purpose switching 1.4 Quick reference data Table 1. Symbol Quick reference data Parameter Conditions [1] Min Typ Max Unit - - 600 V VDRM repetitive peak off-state voltage ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - - 155 A IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; see Figure 1; see Figure 2; see Figure 3 - - 16 A BT139-600E NXP Semiconductors 4Q Triac Table 1. Symbol Quick reference data …continued Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 - 4 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 - 5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 - 11 25 mA Static characteristics gate trigger current IGT [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ms. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 T1 G sym051 1 2 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BT139-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT139-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 2 of 14 BT139-600E NXP Semiconductors 4Q Triac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions [1] Min Max Unit - 600 V VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 °C; see Figure 1; see Figure 2; see Figure 3 - 16 A ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4; see Figure 5 - 155 A full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 170 A I2t I2t tp = 10 ms; sine-wave pulse - 120 A2 s dIT/dt rate of rise of on-state current IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2+ G+ - 50 A/µs IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2+ G- - 50 A/µs IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2- G- - 50 A/µs IT = 20 A; IG = 200 mA; dIG/dt = 0.2 A/µs; T2- G+ - 10 A/µs for fusing IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C [1] over any 20 ms period Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/ms. BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 3 of 14 BT139-600E NXP Semiconductors 4Q Triac 001aab090 50 001aab091 20 IT(RMS) (A) 40 IT(RMS) (A) (1) 15 30 10 20 5 10 0 10−2 Fig 1. 10−1 0 −50 1 10 surge duration (s) RMS on-state current as a function of surge duration; maximum values Fig 2. 0 50 100 150 Tmb (°C) RMS on-state current as a function of mounting base temperature; maximum values 001aab093 25 Ptot (W) 20 95 Tmb(max) (°C) α= 180 101 120 90 15 107 60 30 10 α 119 α 5 125 20 0 0 5 10 113 15 IT(RMS) (A) Fig 3. Total power dissipation as a function of RMS on-state current; maximum values. BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 4 of 14 BT139-600E NXP Semiconductors 4Q Triac 001aab102 160 ITSM (A) IT ITSM 120 T t Tj(initial) = 25 °C max 80 40 0 102 10 1 103 n Fig 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 001aab092 103 ITSM (A) 102 (1) IT (2) ITSM T t Tj(initial) = 25 °C max 10 10−2 10−1 1 102 10 T (ms) Fig 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 5 of 14 BT139-600E NXP Semiconductors 4Q Triac 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; see Figure 6 - - 1.7 K/W full cycle; see Figure 6 - - 1.2 K/W thermal resistance from junction to ambient full cycle - 60 - K/W Rth(j-a) 001aab098 10 Zth(j-mb) (K/W) (1) 1 (2) 10−1 PD 10−2 t tp 10−3 10−5 10−4 10−3 10−2 10−1 1 10 tp (s) Fig 6. Transient thermal impedance from junction to mounting base as a function of pulse width BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 6 of 14 BT139-600E NXP Semiconductors 4Q Triac 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 7 - 2.5 10 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 7 - 4 10 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; see Figure 7 - 5 10 mA VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; see Figure 7 - 11 25 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 °C; see Figure 8 - 3.2 30 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 °C; see Figure 8 - 16 40 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 °C; see Figure 8 - 4 30 mA VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 °C; see Figure 8 - 5.5 40 mA VD = 12 V; Tj = 25 °C; see Figure 9 - 4 45 mA Static characteristics IGT IL gate trigger current latching current IH holding current VT on-state voltage IT = 20 A; Tj = 25 °C; see Figure 10 - 1.2 1.6 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; see Figure 11 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.25 0.4 - V VD = 402 V; Tj = 125 °C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; exponential waveform; gate open circuit - 50 - V/µs tgt gate-controlled turn-on time ITM = 20 A; VD = 600 V; IG = 100 mA; dIG/dt = 5 A/µs - 2 - µs BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 7 of 14 BT139-600E NXP Semiconductors 4Q Triac 001aab448 3 IGT (Tj) IGT(25°C) 001aab100 3 IL IL(25°C) (1) (2) 2 2 (3) (4) 1 1 0 −50 Fig 7. 0 50 100 0 −50 150 Tj (°C) Normalized gate trigger current as a function of junction temperature 001aab099 3 Fig 8. 0 50 IH(25°C) 150 Tj (°C) Normalized latching current as a function of junction temperature 001aab094 50 IT (A) 40 IH 100 (1) (2) (3) 2 30 20 1 10 0 −50 Fig 9. 0 0 50 100 150 Product data sheet 1 2 3 VT (V) Normalized holding current as a function of junction temperature BT139-600E 0 Tj (°C) Fig 10. On-state current as a function of on-state voltage All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 8 of 14 BT139-600E NXP Semiconductors 4Q Triac 001aab101 1.6 VGT VGT(25°C) 1.2 0.8 0.4 −50 0 50 100 150 Tj (°C) Fig 11. Normalized gate trigger voltage as a function of junction temperature BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 9 of 14 BT139-600E NXP Semiconductors 4Q Triac 7. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) c e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig 12. Package outline SOT78 (TO-220AB) BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 10 of 14 BT139-600E NXP Semiconductors 4Q Triac 8. Revision history Table 7. Revision history Document ID Release date Data sheet status Change notice Supersedes BT139-600E v.4 20110224 Product data sheet - BT139_SER_E v.3 Modifications: BT139_SER_E v.3 BT139-600E Product data sheet • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • • Legal texts have been adapted to the new company name where appropriate. Type number BT139-600E separated from data sheet BT139_SER_E v.3. 20040923 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 BT139_SERIES_E v.2 © NXP B.V. 2011. All rights reserved. 11 of 14 BT139-600E NXP Semiconductors 4Q Triac 9. Legal information 9.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 12 of 14 BT139-600E NXP Semiconductors 4Q Triac agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] BT139-600E Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 24 February 2011 © NXP B.V. 2011. All rights reserved. 13 of 14 BT139-600E NXP Semiconductors 4Q Triac 11. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 9.2 9.3 9.4 10 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 Thermal characteristics . . . . . . . . . . . . . . . . . . .6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Contact information. . . . . . . . . . . . . . . . . . . . . .13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2011 Document identifier: BT139-600E