PESDxL1BA series Low capacitance bidirectional ESD protection diodes in SOD323 Rev. 02 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Bidirectional ElectroStatic Discharge (ESD) protection diodes in a very small SOD323 (SC-76) SMD plastic package designed to protect one signal line from the damage caused by ESD and other transients. 1.2 Features n n n n Bidirectional ESD protection of one line Max. peak pulse power: Ppp = 500 W Low clamping voltage: V(CL)R = 26 V Ultra low leakage current: IRM < 0.09 µA n n n n ESD protection > 23 kV IEC 61000-4-2, level 4 (ESD) IEC 61000-4-5 (surge); Ipp = 18 A Very small SMD plastic package 1.3 Applications n Computers and peripherals n Communication systems n Audio and video equipment n Data lines n CAN bus protection 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Cd Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V PESD24VL1BA - - 24 V PESD3V3L1BA - 101 - pF PESD5V0L1BA - 75 - pF PESD12VL1BA - 19 - pF PESD15VL1BA - 16 - pF PESD24VL1BA - 11 - pF diode capacitance Conditions VR = 0 V; f = 1 MHz PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 2. Pinning information Table 2. Pinning Pin Description 1 cathode 1 2 cathode 2 Simplified outline 1 Symbol 2 1 2 sym045 3. Ordering information Table 3. Ordering information Type number Package Name PESDxL1BA series SC-76 Description Version plastic surface mounted package; 2 leads SOD323 4. Marking Table 4. Marking codes Type number Marking code PESD3V3L1BA AB PESD5V0L1BA AC PESD12VL1BA AD PESD15VL1BA AE PESD24VL1BA AF PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 2 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3L1BA - 500 W PESD5V0L1BA - 500 W PESD12VL1BA - 200 W PESD15VL1BA - 200 W - 200 W PESD3V3L1BA - 18 A PESD5V0L1BA - 15 A PESD12VL1BA - 5 A PESD15VL1BA - 5 A PESD24VL1BA - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Ppp Parameter Conditions peak pulse power 8/20 µs [1] PESD24VL1BA peak pulse current Ipp [1] Symbol ESD ESD maximum ratings Parameter Conditions Min Max Unit PESD3V3L1BA - 30 kV PESD5V0L1BA - 30 kV PESD12VL1BA - 30 kV PESD15VL1BA - 30 kV PESD24VL1BA - 23 kV - 10 kV electrostatic discharge capability PESDxL1BA series IEC 61000-4-2 (contact discharge) [1] HBM MIL-Std 883 Device stressed with ten non-repetitive ESD pulses; see Figure 2. Table 7. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD); Figure 2 > 15 kV (air); > 8 kV (contact) HBM MIL-Std 883; class 3 > 4 kV PESDXL1BA_SER_2 Product data sheet [1] Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. Table 6. [1] 8/20 µs © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 3 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 4 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3L1BA - - 3.3 V PESD5V0L1BA - - 5.0 V PESD12VL1BA - - 12 V PESD15VL1BA - - 15 V - - 24 V PESD24VL1BA IRM V(BR) reverse leakage current see Figure 7 PESD3V3L1BA VRWM = 3.3 V - 0.09 2 µA PESD5V0L1BA VRWM = 5.0 V - 0.01 1 µA PESD12VL1BA VRWM = 12 V - <1 50 nA PESD15VL1BA VRWM = 15 V - <1 50 nA PESD24VL1BA VRWM = 24 V - <1 50 nA breakdown voltage IR = 5 mA PESD3V3L1BA 5.8 6.4 6.9 V PESD5V0L1BA 7.0 7.6 8.2 V PESD12VL1BA 14.2 15.9 16.7 V PESD15VL1BA 17.1 18.9 20.3 V 25.4 27.8 30.3 V PESD3V3L1BA - 101 - pF PESD5V0L1BA - 75 - pF PESD12VL1BA - 19 - pF PESD15VL1BA - 16 - pF - 11 - pF Ipp = 1 A - - 8 V Ipp = 18 A - - 26 V Ipp = 1 A - - 10 V Ipp = 15 A - - 33 V Ipp = 1 A - - 20 V Ipp = 5A - - 37 V Ipp = 1 A - - 25 V Ipp = 5 A - - 44 V Ipp = 1 A - - 40 V Ipp = 3 A - - 70 V PESD24VL1BA Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 and 6 PESD24VL1BA V(CL)R [1] clamping voltage PESD3V3L1BA PESD5V0L1BA PESD12VL1BA PESD15VL1BA PESD24VL1BA PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 5 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 Table 8. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions rdif differential resistance IR = 1 mA [1] Min Typ Max Unit PESD3V3L1BA - - 400 Ω PESD5V0L1BA - - 80 Ω PESD12VL1BA - - 200 Ω PESD15VL1BA - - 225 Ω PESD24VL1BA - - 300 Ω Non-repetitive current pulse 8/20 µs exponential decay waveform; see Figure 1. PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 6 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 006aaa066 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 (1) 102 0.4 (2) 10 1 102 10 103 0 104 0 50 100 150 t p (µs) 200 Tj (°C) Tamb = 25 °C tp = 8/20 µs exponential decay waveform; see Figure 1 (1) PESD3V3L1BA and PESD5V0L1BA (2) PESD12VL1BA; PESD15VL1BA; PESD24VL1BA Fig 3. Peak pulse power dissipation as a function of pulse time; typical values Fig 4. 006aaa067 110 Cd (pF) 100 Relative variation of peak pulse power as a function of junction temperature; typical values 006aaa068 20 Cd (pF) 16 90 (1) 12 (1) 80 (2) 8 70 (3) (2) 60 4 0 50 0 1 2 3 4 5 0 5 10 15 20 25 VR (V) VR (V) Tamb = 25 °C; f = 1 MHz Tamb = 25 °C; f = 1 MHz (1) PESD3V3L1BA (1) PESD12VL1BA (2) PESD5V0L1BA (2) PESD15VL1BA (3) PESD24VL1BA Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 7 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 006aaa069 10 (1) IRM IRM(25°C) 1 10−1 −100 −50 0 50 100 150 Tj (°C) (1) PESD3V3L1BA; PESD5V0L1BA For PESD12VL1BA, PESD15VL1BA and PESD24VL1BA, IRM < 20 nA at 150 °C Fig 7. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 8 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 ESD TESTER RZ 450 Ω CZ 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω 1 DUT: PESDxL1BA IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω 2 vertical scale = 20 V/div; horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VL1BA GND PESD15VL1BA GND PESD12VL1BA GND PESD5V0L1BA GND GND PESD3V3L1BA GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) vertical scale = 20 V/div; horizontal scale = 50 ns/div GND GND PESD3V3L1BA GND PESD5V0L1BA GND PESD12VL1BA GND PESD15VL1BA GND PESD24VL1BA vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 8. clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa070 ESD clamping test setup and waveforms PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 9 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 7. Application information The PESDxL1BA series is designed for bidirectional protection of one signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The PESDxL1BA series may be used on lines where the signal polarity is above and below ground. The PESDxL1BA series provides a surge capability of up to 500 W per line for a 8/20 µs waveform. line to be protected PESDxL1BA 006aaa071 ground Fig 9. Typical application: Bidirectional protection of one signal line Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the protection device as close to the input terminal or connector as possible. 2. The path length between the protection device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductor. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 10 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 8. Package outline Plastic surface-mounted package; 2 leads SOD323 A D E X v HD M A Q 1 2 bp A A1 (1) c Lp detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E HD Lp Q v mm 1.1 0.8 0.05 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode OUTLINE VERSION REFERENCES IEC JEDEC SOD323 JEITA SC-76 EUROPEAN PROJECTION ISSUE DATE 03-12-17 06-03-16 Fig 10. Package outline SOD323 (SC-76) PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 11 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESDxL1BA series [1] Package SOD323 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 For further information and the availability of packing methods, see Section 12. PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 12 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXL1BA_SER_2 20090820 Product data sheet - PESDXL1BA_SER_1 Modifications: PESDXL1BA_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 10 “Package outline SOD323 (SC-76)”: updated 20041004 Product data sheet PESDXL1BA_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 13 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXL1BA_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 14 of 15 PESDxL1BA series NXP Semiconductors Low capacitance bidirectional ESD protection diodes in SOD323 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2009 Document identifier: PESDXL1BA_SER_2