DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BC846W; BC847W NPN general purpose transistors Product specification Supersedes data of 1997 Mar 27 1999 Apr 23 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 65 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and amplification. DESCRIPTION NPN transistor in a SC70; SOT323 plastic package. PNP complements: BC856W and BC857W. 3 handbook, halfpage 3 MARKING 1 TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) BC846W 1D∗ BC847AW 1E∗ BC846AW 1A∗ BC847BW 1F∗ BC846BW 1B∗ BC847CW 1G∗ BC847W 1H∗ 2 1 2 Top view Note Fig.1 1. ∗ = - : Made in Hong Kong. ∗ = t : Made in Malaysia. MAM062 Simplified outline (SC70; SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC846W − 80 V BC847W − 50 V BC846W − 65 V BC847W − 45 V collector-emitter voltage open base VEBO emitter-base voltage − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA open collector Ptot total power dissipation − 200 mW Tstg storage temperature Tamb ≤ 25 °C; note 1 −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient VALUE UNIT 625 K/W note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IE = 0; VCB = 30 V − − 15 nA ICBO collector cut-off current IE = 0; VCB = 30 V; Tj = 150 °C − − 5 µA IEBO emitter cut-off current IC = 0; VEB = 5 V − − 100 nA hFE DC current gain IC = 2 mA; VCE = 5 V; see Figs 2, 3 and 4 110 − 450 BC847W 110 − 800 BC846AW; BC847AW 110 − 220 BC846BW; BC847BW 200 − 450 BC846W 420 − 800 IC = 10 mA; IB = 0.5 mA − − 250 mV IC = 100 mA; IB = 5 mA; note 1 − − 600 mV BC847CW VCEsat VBEsat collector-emitter saturation voltage base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 700 − mV IC = 100 mA; IB = 5 mA − 900 − mV IC = 2 mA; VCE = 5 V 580 − 700 mV VBE base-emitter voltage IC = 10 mA; VCE = 5 V − − 770 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − − 3 pF fT transition frequency IC = 10 mA; VCE = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 10 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 1999 Apr 23 3 − Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W MBH723 250 handbook, full pagewidth hFE 200 VCE = 5 V 150 100 50 0 10−2 10−1 1 102 10 IC (mA) 103 BC846AW; BC847AW. Fig.2 DC current gain; typical values. MBH724 300 handbook, full pagewidth VCE = 5 V hFE 200 100 0 10−2 10−1 1 10 BC846BW; BC847BW. Fig.3 DC current gain; typical values. 1999 Apr 23 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W MBH725 600 handbook, full pagewidth VCE = 5 V hFE 400 200 0 10−2 10−1 1 10 BC847CW. Fig.4 DC current gain; typical values. 1999 Apr 23 5 102 IC (mA) 103 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 1999 Apr 23 REFERENCES IEC JEDEC EIAJ SC-70 6 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Philips Semiconductors Product specification NPN general purpose transistors BC846W; BC847W DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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