APTM100H45FT3G Full - Bridge MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 22 7 23 8 19 Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 10 Q2 Q4 4 26 3 27 29 30 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 VDSS = 1000V RDSon = 450m typ @ Tj = 25°C ID = 18A @ Tc = 25°C 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 18 14 72 ±30 540 357 18 50 2500 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM100H45FT3G – Rev 2 October, 2012 Symbol VDSS APTM100H45FT3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min VGS = 0V,VDS= 1000V Tj = 25°C VGS = 0V,VDS= 800V Tj = 125°C VGS = 10V, ID = 9A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ 450 3 Max 100 500 540 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 154 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 18A Td(on) Turn-on Delay Time Inductive switching @ 125°C VGS = 15V VBus = 667V ID = 18A RG = 5 10 Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energ Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 4350 715 120 pF nC 26 97 12 ns 121 35 Inductive switching @ 25°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 639 Inductive switching @ 125°C VGS = 15V, VBus = 667V ID = 18A, RG = 5Ω 1046 µJ 380 µJ 451 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 18 14 1.3 18 340 Tj = 125°C 640 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 18A IS = - 18A VR = 667V diS/dt = 100A/µs Tj = 25°C 1.78 Tj = 125°C 4.47 Unit A V V/ns ns µC dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 18A di/dt 700A/µs VR VDSS Tj 150°C www.microsemi.com 2–7 APTM100H45FT3G – Rev 2 October, 2012 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery APTM100H45FT3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.35 150 125 100 3 110 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM100H45FT3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTM100H45FT3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 40 6.5V 30 6V 20 5.5V 10 0 5 10 15 20 25 60 50 TJ=125°C 40 30 TJ=25°C 20 10 5V 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 70 7V VGS=15&8V TJ=125°C 30 0 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 9A 1.2 VGS=10V 1.1 VGS=20V 1 0.9 0.8 0 10 20 30 2 3 4 5 6 7 8 9 10 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 40 20 18 16 14 12 10 8 6 4 2 0 50 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM100H45FT3G – Rev 2 October, 2012 50 ID, Drain Current (A) ID, Drain Current (A) 60 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=9A 2.0 1.5 1.0 0.5 0.0 -50 -25 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 100 1.2 1.0 0.9 0.8 0.7 limited by RDSon 1ms 10 10ms Single pulse TJ=150°C TC=25°C 1 0.6 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss Crss 100 10 0 10 20 30 40 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 14 ID=18A TJ=25°C 12 10 50 VDS, Drain to Source Voltage (V) VDS=200V VDS=500V VDS=800V 8 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) www.microsemi.com 5–7 APTM100H45FT3G – Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100H45FT3G APTM100H45FT3G Delay Times vs Current Rise and Fall times vs Current 60 160 td(off) VDS=667V RG=5Ω TJ=125°C L=100µH 50 120 100 tr and tf (ns) VDS=667V RG=5Ω TJ=125°C L=100µH 80 60 40 30 tr 20 40 td(on) 20 10 0 0 5 10 15 20 25 30 35 40 5 10 ID, Drain Current (A) 35 40 2.5 VDS=667V RG=5Ω TJ=125°C L=100µH 1.5 Eon 1 Eoff 0.5 VDS=667V ID=18A TJ=125°C L=100µH 2 Switching Energy (mJ) Switching Energy (mJ) 15 20 25 30 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 2 1.5 Eoff Eon 1 Eoff 0.5 0 0 5 10 15 20 25 30 35 40 0 ID, Drain Current (A) 5 10 15 20 25 30 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 250 ZVS 200 ZCS IDR, Reverse Drain Current (A) 300 Frequency (kHz) tf VDS=667V D=50% RG=5Ω TJ=125°C TC=75°C 150 100 Hard switching 50 100 TJ=150°C 0 6 8 10 12 14 16 ID, Drain Current (A) TJ=25°C 10 18 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM100H45FT3G – Rev 2 October, 2012 td(on) and td(off) (ns) 140 APTM100H45FT3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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