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APTC90DAM60CT1G
Boost chopper
Super Junction MOSFET
Power Module
5
6
11
VDSS = 900V
RDSon = 60m max @ Tj = 25°C
ID = 59A @ Tc = 25°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
Features

CR1
3
4
Q2
-
NTC
9
10

1
2
-
12



Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
CR1 SiC Schottky Diode
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
59
44
150
±20
60
462
8.8
2.9
1940
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTC90DAM60CT1G – Rev 2 October, 2012
Symbol
VDSS
APTC90DAM60CT1G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
Min
Typ
2.5
1000
50
3
Tj = 25°C
Tj = 125°C
VGS = 10V, ID = 52A
VGS = VDS, ID = 6mA
VGS = ±20 V, VDS = 0V
Max
200
Unit
60
3.5
200
m
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
13.6
0.66
nF
540
VGS = 10V
VBus = 400V
ID = 52A
nC
64
230
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 52A
RG = 3.8
20
ns
400
25
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 52A ; RG = 3.8
1.8
mJ
1.5
2.52
mJ
1.7
CR1 SiC diode ratings and characteristics
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=1200V
DC Forward Current
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 100°C
Tj = 25°C
Tj = 175°C
Typ
Max
96
168
30
1.6
2.3
600
3000
VF
Diode Forward Voltage
IF = 30A
QC
Total Capacitive Charge
IF = 30A, VR = 600V
di/dt =1000A/µs
120
C
Total Capacitance
f = 1MHz, VR = 200V
288
f = 1MHz, VR = 400V
207
www.microsemi.com
Unit
V
µA
A
1.8
3
V
nC
pF
2–7
APTC90DAM60CT1G – Rev 2 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC90DAM60CT1G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
CoolMOS
SiC Diode
To heatsink
M4
4000
-40
-40
-40
2
Max
0.27
0.63
Unit
°C/W
V
150
125
100
3
80
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT 
Typ
50
5
3952
4
Max
Unit
k
%
K
%
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTC90DAM60CT1G – Rev 2 October, 2012
SP1 Package outline (dimensions in mm)
APTC90DAM60CT1G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.9
0.25
0.7
0.2
0.15
0.5
0.1
0.3
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
160
5V
80
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
10 ms
ID, DC Drain Current (A)
ID, Drain Current (A)
100 µs
Single pulse
TJ=150°C
TC=25°C
950
925
900
25
75
100
125
50
40
30
20
10
1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
Ciss
10000
Coss
1000
100
Crss
10
1
0
50
75
100
125
TC, Case Temperature (°C)
150
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
50
DC Drain Current vs Case Temperature
60
limited by RDSon
10
975
TJ, Junction Temperature (°C)
1000
100
1000
10
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
www.microsemi.com
VDS=400V
ID=52A
TJ=25°C
8
6
4
2
0
0
100
200 300 400
Gate Charge (nC)
500
600
4–7
APTC90DAM60CT1G – Rev 2 October, 2012
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
240
APTC90DAM60CT1G
VDS=600V
D=50%
RG=3.8Ω
TJ=125°C
TC=75°C
300
Hard
switching
200
ZCS
100
0
20
25
30
35
40
45
50
3.0
2.5
2.0
1.5
1.0
0.5
25
ID, Drain Current (A)
3
Eon
2
100
125
150
6
Switching Energy (mJ)
Eon and Eoff (mJ)
VDS=600V
RG=3.8Ω
TJ=125°C
L=100µH
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
50
TJ, Junction Temperature (°C)
Eoff
1
0
Eoff
5
4
Eon
3
VDS=600V
ID=52A
TJ=125°C
L=100µH
2
1
0
10
20
30
40
50
60
ID, Drain Current (A)
70
80
0
5
10
15
20
Gate Resistance (Ohms)
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5–7
APTC90DAM60CT1G – Rev 2 October, 2012
Frequency (kHz)
ZVS
ON resistance vs Temperature
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
400
APTC90DAM60CT1G
Typical CR1 SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.7
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
60
300
TJ=75°C
40
30
TJ=125°C
20
TJ=175°C
10
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
50
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
225
150
TJ=75°C
TJ=125°C
75
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1800
1500
1200
900
600
300
0
1
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
www.microsemi.com
6–7
APTC90DAM60CT1G – Rev 2 October, 2012
C, Capacitance (pF)
2100
APTC90DAM60CT1G
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
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application. User or customer shall not rely on any data and performance specifications or parameters provided by
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Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–7
APTC90DAM60CT1G – Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.