BT152X-800R SCR 26 July 2012 Product data sheet 1. Product profile 1.1 General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 1.2 Features and benefits • High blocking voltage capability • High thermal cycling performance • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Very high current surge capability 1.3 Applications • Capacitive Discharge Ignition (CDI) • Crowbar protection • Inrush protection • Motor control • Voltage regulation 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 800 V VRRM repetitive peak reverse voltage - - 800 V ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 - - 200 A IT(RMS) RMS on-state current - - 20 A - 3 32 mA half sine wave; Th ≤ 43 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 Scan or click this QR code to view the latest information for this product BT152X-800R NXP Semiconductors SCR 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 K Simplified outline cathode Graphic symbol mb A K G 2 A anode 3 G gate mb n.c. mounting base; isolated sym037 1 2 3 TO-220F (SOT186A) 3. Ordering information Table 3. Ordering information Type number Package BT152X-800R Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM Conditions Min Max Unit repetitive peak off-state voltage - 800 V VRRM repetitive peak reverse voltage - 800 V IT(AV) average on-state current half sine wave; Th ≤ 43 °C - 13 A IT(RMS) RMS on-state current half sine wave; Th ≤ 43 °C; Fig. 1; - 20 A - 200 A - 220 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms I t I t for fusing tp = 10 ms; SIN - 200 A s dIT/dt rate of rise of on-state current IT = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 200 A/µs IGM peak gate current - 5 A 2 2 BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 2 © NXP B.V. 2012. All rights reserved 2 / 11 BT152X-800R NXP Semiconductors SCR Symbol Parameter VRGM Conditions Min Max Unit peak reverse gate voltage - 5 V PGM peak gate power - 20 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 °C Tj junction temperature - 125 °C over any 20 ms period 003aaj932 120 IT(RMS) (A) 100 003aaj931 25 IT(RMS) (A) 43 °C 20 80 15 60 10 40 5 20 0 10-2 10-1 0 -50 1 10 surge duration (s) f = 50 Hz; Th = 43 °C Fig. 1. RMS on-state current as a function of surge duration; maximum values 50 100 Th (°C) 150 RMS on-state current as a function of heatsink temperature; maximum values 003aaj930 30 Ptot (W) Fig. 2. 0 25 20 15 conduction angle (degrees) form factor a 30 60 90 120 180 4 2.8 2.2 1.9 1.57 2 Th(max) (°C) a = 1.57 α 2.2 2.8 43 1.9 4 10 84 5 0 0 2 4 6 8 10 12 IT(AV) (A) 14 125 alpha = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of average on-state current; maximum values BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 3 / 11 BT152X-800R NXP Semiconductors SCR 003aad221 220 I TSM 200 (A) 180 160 140 120 100 80 IT 60 ITSM 40 t tp Tj(init) = 25 °C max 20 0 1 102 10 103 104 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 003aad222 103 ITSM (A) (1) 102 IT t tp Tj(init) = 25 °C max 10 10-5 Fig. 5. ITSM 10-4 10-3 10-2 tp (s) Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink with heatsink compound; Fig. 6 - - 4 K/W without heatsink compound; Fig. 6 - - 4.5 K/W - 55 - K/W Rth(j-a) thermal resistance from junction to ambient BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 4 / 11 BT152X-800R NXP Semiconductors SCR 003aaj934 10 (1) Zth(j-h) (K/W) (2) 1 10-1 P δ= tp T 10-2 t tp 10-3 10-5 10-4 10-3 10-2 10-1 T 1 10 tp (s) (1) without heatsink compound (2) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from anode to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF Conditions Min Typ Max Unit 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 3 32 mA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 25 80 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 15 60 mA VT on-state voltage IT = 40 A; Tj = 25 °C; Fig. 10 - 1.4 1.75 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C; - 0.6 1.5 V 0.25 0.4 - V Fig. 11 VD = 800 V; IT = 0.1 A; Tj = 125 °C; Fig. 11 BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 5 / 11 BT152X-800R NXP Semiconductors SCR Symbol Parameter Conditions Min Typ Max Unit ID off-state current VD = 800 V; Tj = 125 °C - 0.2 1 mA IR reverse current Tj = 125 °C; VR = 800 V - 0.2 1 mA VDM = 536 V; Tj = 125 °C; (VDM = 67% 200 300 - V/µs Dynamic charateristics dVD/dt rate of rise of off-state voltage of VDRM); gate open circuit; exponential waveform; Fig. 12 tgt gate-controlled turn-on ITM = 40 A; VD = 800 V; IG = 0.1 A; dIG/ time dt = 5 A/µs; Tj = 25 °C - 2 - µs tq commutated turn-off time - 70 - µs VDM = 536 V; Tj = 125 °C; ITM = 50 A; VR = 25 V; (dIT/dt)M = 50 A/µs; dVD/ dt = 30 V/µs; RGK = 100 Ω; (VDM = 67% of VDRM) 003aaj961 3 IGT IGT(25°C) IL IL(25°C) 2 2 1 1 0 -50 Fig. 7. 0 50 100 Tj (°C) 0 -50 150 Normalized gate trigger current as a function of Fig. 8. junction temperature BT152X-800R Product data sheet 003aaj959 3 50 100 Tj (°C) 150 Normalized latching current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 26 July 2012 0 © NXP B.V. 2012. All rights reserved 6 / 11 BT152X-800R NXP Semiconductors SCR 003aaj958 3 003aaj962 50 IT (A) IH IH(25°C) 40 2 30 20 (1) 1 (2) (3) 10 0 -50 Fig. 9. 0 50 100 Tj (°C) 0 150 0 1 2 VT (V) 3 Vo = 1.12 V; Rs = 0.015 Ω Normalized holding current as a function of junction temperature (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage 003aaj960 1.6 VGT VGT(25°C) dVD/dt (V/µs) 1.2 103 0.8 102 0.4 -50 0 50 100 Tj (°C) 003aaj963 104 10 150 0 50 100 Tj (°C) 150 gate open circuit Fig. 11. Normalized gate trigger voltage as a function of Fig. 12. Critical rate of rise of off-state voltage as a junction temperature function of junction temperature; minimum values BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 7 / 11 BT152X-800R NXP Semiconductors SCR 8. Package outline Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack' SOT186A E A P A1 q D1 mounting base T D j L2 L1 K Q b1 L b2 1 2 3 b w M c e e1 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1 b2 c D D1 E e e1 j K mm 4.6 4.0 2.9 2.5 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 10.3 9.7 2.54 5.08 2.7 1.7 0.6 0.4 L L1 14.4 3.30 13.5 2.79 (1) L2 max. P Q q 3 3.2 3.0 2.6 2.3 3.0 2.6 (2) T 2.5 w 0.4 Notes 1. Terminal dimensions within this zone are uncontrolled. 2. Both recesses are # 2.5 × 0.8 max. depth OUTLINE VERSION REFERENCES IEC SOT186A JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 02-04-09 06-02-14 3-lead TO-220F Fig. 13. TO-220F (SOT186A) BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 8 / 11 BT152X-800R NXP Semiconductors SCR In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 9. Legal information 9.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Preview — The document is a preview version only. The document is still subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 9.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. BT152X-800R Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 9 / 11 BT152X-800R NXP Semiconductors SCR grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 10 / 11 BT152X-800R NXP Semiconductors SCR 10. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Limiting values .......................................................2 5 Thermal characteristics .........................................4 6 Isolation characteristics ........................................5 7 Characteristics ....................................................... 5 8 Package outline ..................................................... 8 9 9.1 9.2 9.3 9.4 Legal information ...................................................9 Data sheet status ................................................. 9 Definitions .............................................................9 Disclaimers ...........................................................9 Trademarks ........................................................ 10 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 26 July 2012 BT152X-800R Product data sheet All information provided in this document is subject to legal disclaimers. 26 July 2012 © NXP B.V. 2012. All rights reserved 11 / 11