1N6909UTK3AS and 1N6909UTK3CS Available on commercial versions 200 VOLTS,150 AMPS LOW REVERSE LEAKAGE SCHOTTKY DIODE Screening in reference to MIL-PRF-19500 available DESCRIPTION The 1N6909UTK3AS device polarity is anode-to-strap (standard) and is also available optionally in 1N6909UTK3CS as cathode-to-strap. This part can also be ordered in a strapless version. Up-screening for high-reliability applications is also available. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES ThinKeyTM 3 Package • JEDEC registered 1N6909. • Oxide passivated structure. • Guard ring protection for increased reverse energy capability. • Epitaxial structure minimizes forward voltage drop. • Hermetically sealed, low profile ceramic surface mount power package. • Up-screening available in reference to MIL-PRF-19500 (see part nomenclature for all available options). • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS • • • • Low package inductance. Very low thermal resistance. Also available with no strap as 1N6909UTK3 by special request. Mechanically rugged. MAXIMUM RATINGS @ T C = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol Value Unit T j and Tstg -65 to +150 °C R ӨJC 0.20 °C/W R ӨJC 0.35 °C/W Peak Repetitive Reverse Voltage V RRM 200 V Working Peak Reverse Voltage V RWM 200 V VR 200 V Junction and Storage Temperature Range Thermal Resistance, Junction to Case (Anode-to-Strap) Thermal Resistance, Junction to Case (Cathode-to-Strap, Also applicable to strapless option) DC Blocking Voltage Average Rectified Forward Current, TC ≤ 125 °C Derating, Forward Current, TC ≥ 125 °C Non-repetitive Peak Surge Current (tp = 8.3 ms, half sine-wave) Peak Repetitive Reverse Surge Current (tp = 1 µs, f = 1 kHz) I F(ave) 150 A dl F / dT 4 A/°C I FSM 2000 A I RRM 2 A MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 1 of 8 1N6909UTK3AS and 1N6909UTK3CS MECHANICAL and PACKAGING • • • • • • CASE: Ceramic-molybdenum Thinkey 3. TERMINALS: SnPb solder or RoHS compliant matte/tin (on commercial grade only) coated. MARKING: Part number and polarity symbol. POLARITY: Standard is anode to strap. Reverse is cathode to strap. WEIGHT: Approximately 1.7 grams. See Package Dimensions on last page. PART NOMENCLATURE MQ 1N6909 U TK 3 AS (e3) Reliability Level MQ (reference JAN) MX (reference JANTX) MV (reference JANTXV) Blank = Commercial RoHS Compliance e3 = RoHS compliant (available on commercial grade only) Blank = non-RoHS compliant Polarity AS=Anode to Strap (standard) CS=Cathode-to-Strap Blank=No Strap JEDEC type number (See Electrical Characteristics table) Surface Mount package Package Level Package Class SYMBOLS & DEFINITIONS Definition Symbol f IF IR TC tp VR frequency Forward current, dc Reverse current, dc Case temperature Pulse time Reverse Voltage, dc T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 2 of 8 1N6909UTK3AS and 1N6909UTK3CS ELECTRICAL CHARACTERISTICS @ T A = +25 °C, unless otherwise noted Parameters / Test Conditions Symbol MIN TYP MAX Unit Reverse (Leakage) Current V R = 200 V, Tc = 25 °C I R25 75 100 µA V R = 200 V, Tc = +125 °C I R125 1 5 mA Forward Voltage Pulse test, pulse width = 300 µs; duty cycle ≤ 2% I F = 10 A, TC = 25 °C V F1 650 700 mV I F = 50 A, TC = 25 °C V F2 750 760 mV I F = 100 A, TC = 25 °C V F3 825 850 mV I F = 150 A, TC = 25 °C V F4 850 900 mV I F = 200 A, TC = 25 °C V F7 910 - mV I F = 100 A, TC = -55 °C V F5 860 950 mV I F = 150 A, TC = +125 °C V F6 700 800 mV Junction Capacitance V R = 10 V C j1 1800 3200 pF VR = 5 V C j2 3000 pF 200 220 V 200 205 V Breakdown Voltage I R = 1 mA, TC = 25 °C B VR I R = 1 mA, TC = -55 °C T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 3 of 8 1N6909UTK3AS and 1N6909UTK3CS IF (Amps) GRAPHS V F (Volts) FIGURE 1 Schottky V F – I F Characteristics T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 4 of 8 1N6909UTK3AS and 1N6909UTK3CS IR (Amps) GRAPHS (continued) V R (Volts) FIGURE 2 Schottky V R vs I R T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 5 of 8 1N6909UTK3AS and 1N6909UTK3CS Capacitance (pF) GRAPHS (continued) V R (Volts) FIGURE 3 V R vs Total Capacitance (T J = 25 ºC) T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 6 of 8 1N6909UTK3AS and 1N6909UTK3CS PACKAGE DIMENSIONS Ltr BL BT BLT C E F LC LF LT LW Dimensions Millimeters Min Max Min Max .420 .440 10.67 11.18 .115 2.92 .125 3.18 .469 .509 11.91 12.93 .038 NOM .97 NOM .331 .341 8.41 8.66 .040 NOM 1.02 NOM .055 .075 1.40 1.91 .005 .015 .127 .381 .185 .215 4.70 5.46 Inch NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology. SEE PAD LAYOUT ON NEXT PAGE. T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 7 of 8 1N6909UTK3AS and 1N6909UTK3CS PAD LAYOUT T4-LDS-0253, Rev. 1 (120632) ©2012 Microsemi Corporation Page 8 of 8