1N6817 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 (MSASC25W100K) 1N6817R Features • • • • • • • • • Tungsten schottky barrier Oxide passivated structure Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6817) and reverse polarity (strap is cathode: 1N6817R) TXV-level screening (MSASC25W100KV) or S-level (MSASC25W100KS) screening i.a.w. Microsemi internal procedure PS11.50 available (MSASC25W100KR) Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, Tc≤ 145°C derating, forward current, Tc≥ 145°C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= 1µs, f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6817 1N6817R 100 Volts 25 Amps LOW REVERSE LEAKAGE SCHOTTKY DIODE SYMBOL MAX. UNIT VRRM VRWM VR IF(ave) dIF/dT 100 100 100 25 (3.3) Volts Volts Volts Amps Amps/°C IFSM IRRM Tj Tstg θJC 120 2 -55 to +175 -55 to +175 1.25 1.35 Amps Amp °C °C °C/W Mechanical Outline ThinKey™2 Datasheet# MSC1034B August, 2000 1N6817 (MSASC25W100K) 1N6817R (MSASC25W100KR) Electrical Parameters DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 µs d/c≤ 2% Junction Capacitance Breakdown Voltage SYMBOL IR25 IR125 VF1 VF2 VF3 VF4 VF7 VF5 VF6 Cj1 Cj2 BVR Datasheet# MSC1034B August, 2000 CONDITIONS VR= 100 Vdc, Tc= 25°C VR= 100 Vdc, Tc= 125°C IF= 5A, Tc= 25°C IF= 10A, Tc= 25°C IF= 20A, Tc= 25°C IF= 50A, Tc= 25°C IF= 100A, TC= 25°C IF= 20A, Tc= -55°C IF= 20A, Tc= 125°C VR= 10 Vdc VR= 5 Vdc IR= 1 mA, Tc= 25°C IR= 1 mA, Tc= -55°C MIN 100 100 TYP. 7 2.5 650 730 810 940 1060 925 670 370 500 120 MAX 300 15 725 810 900 1020 1025 800 500 UNIT µA mA mV mV mV mV mV mV mV pF pF V V