APT2X31DC60J APT2X30DC60J ISOTOP® SiC Diode Power Module 2 2 3 1 4 VRRM = 600V IF = 30A @ TC = 100°C Application 3 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features Anti-Parallel Anti-Parallel 1 APT2X60DC120J APT2X30DC60J 4 Parallel Parallel APT2X31DC60J APT2X61DC120J 3 2 SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits 4 1 ISOTOP Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 100°C TC = 25°C Max ratings Unit 600 V 30 370 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–4 APT2X31_30DC60J – Rev 1 October , 2012 Absolute maximum ratings (per leg) APT2X31DC60J APT2X30DC60J All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic Test Conditions VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Min Tj = 25°C IF = 30A Tj = 175°C Tj = 25°C VR = 600V Tj = 175°C IF = 30A, VR = 300V di/dt =1000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V Typ 1.6 2 150 300 Max 1.8 2.4 600 3000 Unit V µA 42 nC 195 150 pF Thermal and package characteristics (per leg) Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient (Diode) Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.9 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) 3 30.1 (1.185) 30.3 (1.193) 4 * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) 2 1 Dimensions in Millimeters and (Inches) www.microsemi.com 2–4 APT2X31_30DC60J – Rev 1 October , 2012 7.8 (.307) 8.2 (.322) APT2X31DC60J APT2X30DC60J Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 60 600 TJ=75°C 40 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 50 TJ=175°C 30 TJ=125°C 20 10 400 0.5 1 1.5 2 2.5 3 TJ=125°C 300 TJ=75°C 200 TJ=25°C 100 0 0 TJ=175°C 500 3.5 VF Forward Voltage (V) 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 1200 1000 800 600 400 200 1 10 100 VR Reverse Voltage 1000 ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 3–4 APT2X31_30DC60J – Rev 1 October , 2012 0 APT2X31DC60J APT2X30DC60J DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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