2 1 3 4 2 1 Anti-Parallel APT2x30DQ60J 3 4 2 1 3 4 Parallel APT2x31DQ60J 7 22 TO S "UL Recognized" ISOTOP ® ® APT2x31DQ60J APT2x30DQ60J 600V 600V 30A 30A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times • Low Losses • Soft Recovery Characteristics • Low Noise Switching • Popular SOT-227 Package • Cooler Operation • Low Forward Voltage • Higher Reliability Systems • Uninterruptible Power Supply (UPS) • High Blocking Voltage • Increased System Power • Induction Heating • Low Leakage Current • High Speed Rectifiers • Avalanche Energy Rated -Switchmode Power Supply -Inverters • Free Wheeling Diode -Motor Controllers -Converters • Snubber Diode MAXIMUM RATINGS Symbol VR Density All Ratings: TC = 25°C unless otherwise specified. Characteristic / Test Conditions APT2x31_30DQ60J UNIT 600 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5) 30 RMS Forward Current (Square wave, 50% duty) 42 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG TL Amps 320 20 mJ -55 to 175 Operating and StorageTemperature Range °C 300 Lead Temperature for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 30A 1.8 2.2 IF = 60A 2.0 IF = 30A, TJ = 125°C 1.3 Volts VR = VR Rated 250 VR = VR Rated, TJ = 125°C 500 APT Website - http://www.advancedpower.com 36 UNIT µA pF 3-2005 VF Characteristic / Test Conditions 053-4203 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT2x31_30DQ60J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C Maximum Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Time Qrr Reverse Recovery Charge VR = 400V, TC = 25°C IF = 30A, diF/dt = -200A/µs Maximum Reverse Recovery Current trr IRRM IF = 30A, diF/dt = -200A/µs VR = 400V, TC = 125°C IF = 30A, diF/dt = -1000A/µs Maximum Reverse Recovery Current VR = 400V, TC = 125°C MIN TYP MAX UNIT - 21 - 105 - 115 - 3 - 125 ns - 465 nC - 7 - 60 ns - 830 nC - 23 Amps MIN TYP ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance WT Torque MAX 1.21 20 Package Weight oz 29.2 g 10 lb•in 1.1 N•m APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 1.00 0.7 0.5 0.60 0.3 0.40 0.20 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 1.40 0.80 t2 t SINGLE PULSE 0.05 10 -5 10 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION -4 RC MODEL 3-2005 Junction temp (°C) 053-4203 Rev B t1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 Power (watts) 0.320 °C/W 0.00278 J/°C 0.515 °C/W 0.0421 J/°C 0.375 °C/W 0.242 J/°C Case temperature (°C) FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL °C/W 1.03 Maximum Mounting Torque 1.20 UNIT TYPICAL PERFORMANCE CURVES TJ = 175°C 60 40 TJ = 125°C 20 0 TJ = 25°C TJ = -55°C 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 0 Qrr, REVERSE RECOVERY CHARGE (nC) 1400 T = 125°C J V = 400V R 1200 60A 1000 800 30A 600 400 15A 200 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 R 150 30A 100 15A 50 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/µs) Figure 3. Reverse Recovery Time vs. Current Rate of Change 35 T = 125°C J V = 400V 60A R 30 25 20 15 30A 10 15A 5 0 0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 5. Reverse Recovery Current vs. Current Rate of Change 50 Qrr Duty cycle = 0.5 T = 175°C 45 trr 1.0 T = 125°C J V = 400V 60A 0 J 40 IRRM 0.8 trr 35 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/µs) trr, REVERSE RECOVERY TIME (ns) 80 APT2x31_30DQ60J 200 IRRM, REVERSE RECOVERY CURRENT (A) IF, FORWARD CURRENT (A) 100 0.6 30 25 20 0.4 Qrr 0.2 15 10 5 0.0 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (°C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 150 3-2005 100 50 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4203 Rev B CJ, JUNCTION CAPACITANCE (pF) 200 APT2x31_30DQ60J Vr diF /dt Adjust +18V APT6017LLL 0V D.U.T. 30µH trr/Qrr Waveform PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circuit 1 IF - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 IRRM - Maximum Reverse Recovery Current. 4 trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. 5 1 4 Zero 5 3 0.25 IRRM 2 Qrr - Area Under the Curve Defined by IRRM and trr. Figure 10, Diode Reverse Recovery Waveform and Definitions SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 053-4203 Rev B 3-2005 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) Anti-parallel Parallel APT2x30DQ60J Anode 2 APT2x31DQ60J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2 ISOTOP® is a Registered Trademark of SGS Thomson. APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.