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APTC60DAM18CTG
Boost chopper
SiC FWD diode
Super Junction
MOSFET Power Module
NTC2
VBUS
VBUS SENSE
VDSS = 600V
RDSon = 18m max @ Tj = 25°C
ID = 143A @ Tc = 25°C
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
Features

-
OUT
Q2
G2

FWD SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF


Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
Internal thermistor for temperature monitoring
High level of integration
S2
0/VBU S
NTC1


Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Ultra low RDSon
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 RoHS compliant
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
600
143
107
572
±30
18
833
20
1
1800
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–8
APTC60DAM18CTG – Rev 4 October, 2012
CR1
APTC60DAM18CTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 600V
VGS = 0V,VDS = 600V
VGS = 10V, ID = 71.5A
VGS = VDS, ID = 4mA
VGS = ±20 V, VDS = 0V
2.1
3
Min
Typ
28
10.2
0.85
Max
100
1000
18
3.9
±200
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 143A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
nF
1036
nC
116
444
21
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 143A
RG = 1.2
30
ns
283
84
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
1608
µJ
3920
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 143A, RG = 1.2Ω
2630
µJ
4824
Chopper diode ratings and characteristics
IRM
IF
Maximum Reverse Leakage Current
Test Conditions
VR=600V
DC Forward Current
Min
600
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
Tj = 175°C
Typ
Max
0.5
1
100
1.6
2.0
2
10
VF
Diode Forward Voltage
IF = 100A
QC
Total Capacitive Charge
IF = 100A, VR = 300V
di/dt =2400A/µs
140
C
Total Capacitance
f = 1MHz, VR = 200V
650
f = 1MHz, VR = 400V
500
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Unit
V
mA
A
1.8
2.4
V
nC
pF
2–8
APTC60DAM18CTG – Rev 4 October, 2012
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APTC60DAM18CTG
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
Transistor
Diode
To heatsink
M5
4000
-40
-40
-40
2.5
Max
0.15
0.28
Unit
°C/W
V
150
125
100
4.7
160
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–8
APTC60DAM18CTG – Rev 4 October, 2012
SP4 Package outline (dimensions in mm)
APTC60DAM18CTG
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.16
0.14
0.9
0.12
0.7
0.1
0.5
0.08
0.06
0.3
0.04
0.1
0.02
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Transfert Characteristics
Low Voltage Output Characteristics
540
800
VGS=15&10V
600
ID, Drain Current (A)
6.5V
6V
500
400
5.5V
300
5V
200
4.5V
100
360
270
180
TJ=125°C
90
TJ=25°C
4V
0
TJ=-55°C
0
0
5
10
15
20
VDS, Drain to Source Voltage (V)
25
0
Normalized to
VGS=10V @ 71.5A
1.05
VGS=10V
VGS=20V
1
1
2
3
4
5
6
VGS, Gate to Source Voltage (V)
7
DC Drain Current vs Case Temperature
160
RDS(on) vs Drain Current
1.1
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
450
0.95
140
120
100
0.9
80
60
40
20
0
0
40
80
120
160
200
240
ID, Drain Current (A)
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25
50
75
100
125
TC, Case Temperature (°C)
150
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APTC60DAM18CTG – Rev 4 October, 2012
ID, Drain Current (A)
700
1.1
1.0
0.9
0.8
0.7
-50 -25
0
25
50
75 100 125 150
ON resistance vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Maximum Safe Operating Area
Threshold Voltage vs Temperature
1000
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
1.2
1.0
0.9
0.8
0.7
limited by RDSon
100µs
100
1 ms
10
0.6
Single pulse
TJ=150°C
TC=25°C
10 ms
1
-50 -25
0
25
50
75 100 125 150
1
Ciss
Coss
1000
Crss
100
10
0
100
1000
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
10000
10
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID= 143A
14
ID=143A
TJ=25°C
12
10
VDS=120V
VDS=300V
8
VDS=480V
6
4
2
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
0
200
400 600 800
Gate Charge (nC)
1000 1200
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APTC60DAM18CTG – Rev 4 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.2
RDS(on), Drain to Source ON resistance
(Normalized)
APTC60DAM18CTG
APTC60DAM18CTG
Delay Times vs Current
350
td(off)
300
250
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
200
150
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
100
80
tr and tf (ns)
100
60
40
tr
50
20
td(on)
0
0
0
40
80
120
160
200
240
0
40
ID, Drain Current (A)
120
160
200
240
Switching Energy vs Gate Resistance
20
VDS=400V
RG=1.2Ω
TJ=125°C
L=100µH
Eoff
Switching Energy (mJ)
Switching Energy (mJ)
10
9
8
7
6
5
4
3
2
1
0
80
ID, Drain Current (A)
Switching Energy vs Current
Eon
VDS=400V
ID=143A
TJ=125°C
L=100µH
15
Eoff
10
Eon
5
0
0
40
80
120 160 200
ID, Drain Current (A)
240
Operating Frequency vs Drain Current
ZCS
100
ZVS
80
VDS=400V
D=50%
RG=1.2Ω
TJ=125°C
TC=75°C
60
40
20
Hard
switching
50
70
90
110
ID, Drain Current (A)
5
7.5
10
12.5
TJ=150°C
100
TJ=25°C
10
0
30
2.5
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
140
120
0
Gate Resistance (Ohms)
160
Frequency (kHz)
tf
130
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
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6–8
APTC60DAM18CTG – Rev 4 October, 2012
td(on) and td(off) (ns)
Rise and Fall times vs Current
120
APTC60DAM18CTG
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
2000
TJ=25°C
150
TJ=75°C
IR Reverse Current (µA)
IF Forward Current (A)
Reverse Characteristics
Forward Characteristics
200
TJ=175°C
100
TJ=125°C
50
TJ=175°C
1500
TJ=125°C
1000
500
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
0
200
TJ=75°C
TJ=25°C
300 400 500 600 700
VR Reverse Voltage (V)
800
Capacitance vs.Reverse Voltage
C, Capacitance (pF)
4000
3000
2000
1000
1
10
100
VR Reverse Voltage
1000
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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7–8
APTC60DAM18CTG – Rev 4 October, 2012
0
APTC60DAM18CTG
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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APTC60DAM18CTG – Rev 4 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.